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    Wavelength conversion device based on optical four wave mixing
    1.
    发明公开
    Wavelength conversion device based on optical four wave mixing 有权
    维伦华森（Vierwellenmischen）Wellenlängenumwandlungsvorrichtungbasierend auf optischem

    公开(公告)号：EP2568329A2

    公开(公告)日：2013-03-13

    申请号：EP12195866.4

    申请日：2003-09-10

    Applicant: FUJITSU LIMITED

    Inventor： Akiyama, Tomoyuki ,  Hatori, Nobuaki ,  Sugawara, Mitsuru

    IPC: G02F1/35

    CPC classification number: B82Y20/00 ,  G02F1/3536 ,  G02F1/3556 ,  G02F2001/01791

    Abstract: A wavelength conversion device including a nonlinear medium having quantum dots uses a tunable laser as an excitation light source of optical four wave mixing, and performs wavelength conversion for a wide bandwidth signal light with optical four wave mixing. In a wavelength conversion system (40) any one of the signal light having a wavelength of λ1, λ2, ..., λn is supplied to the wavelength conversion system (40) which includes an optical amplifier (41) for amplifying the signal light with an amplification factor α, a tunable laser (42), and an optical amplifier (43) for amplifying an output laser light from the tunable laser (42) with an amplification factor β. The light amplified in the optical amplifiers (41, 42) is coupled in an optical coupler (45) and supplied via an optical circulator (46) and a polarization beam splitter (47) to the quantum dot optical amplifier (20). A 1/2 wavelength plate (48) is inserted in the optical port of the polarization beam splitter (48) from which the TM mode light is extracted and converted to a TE mode light.

    Abstract translation: 包括具有量子点的非线性介质的波长转换装置使用可调谐激光器作为光学四波混频的激发光源，并且对于具有光学四波混频的宽带宽信号光进行波长转换。 在波长转换系统（40）中，具有波长λ1，λ2，...，n n的信号光中的任何一个被提供给波长转换系统（40），波长转换系统（40）包括用于放大的光放大器 具有放大系数±的信号光，可调谐激光器（42）和用于以放大系数²放大来自可调谐激光器（42）的输出激光的光放大器（43）。 在光放大器（41,42）中放大的光耦合在光耦合器（45）中，并通过光环行器（46）和偏振分束器（47）提供给量子点光放大器（20）。 将1/2波长板（48）插入偏振分束器（48）的光口中，从中提取TM模式光并将其转换为TE模式光。

    Wavelength conversion device based on optical four wave mixing
    4.
    发明公开
    Wavelength conversion device based on optical four wave mixing 有权
    基于光学四波混频的波长转换器件

    公开(公告)号：EP2568329A3

    公开(公告)日：2013-09-04

    申请号：EP12195866.4

    申请日：2003-09-10

    Applicant: FUJITSU LIMITED

    Inventor： Akiyama, Tomoyuki ,  Hatori, Nobuaki ,  Sugawara, Mitsuru

    IPC: G02F1/35

    CPC classification number: B82Y20/00 ,  G02F1/3536 ,  G02F1/3556 ,  G02F2001/01791

    Abstract: A wavelength conversion device including a nonlinear medium having quantum dots uses a tunable laser as an excitation light source of optical four wave mixing, and performs wavelength conversion for a wide bandwidth signal light with optical four wave mixing. In a wavelength conversion system (40) any one of the signal light having a wavelength of λ1, λ2, ..., λn is supplied to the wavelength conversion system (40) which includes an optical amplifier (41) for amplifying the signal light with an amplification factor α, a tunable laser (42), and an optical amplifier (43) for amplifying an output laser light from the tunable laser (42) with an amplification factor β. The light amplified in the optical amplifiers (41, 42) is coupled in an optical coupler (45) and supplied via an optical circulator (46) and a polarization beam splitter (47) to the quantum dot optical amplifier (20). A 1/2 wavelength plate (48) is inserted in the optical port of the polarization beam splitter (48) from which the TM mode light is extracted and converted to a TE mode light.

    Abstract translation: 包括具有量子点的非线性介质的波长转换装置使用可调谐激光器作为光四波混频的激励光源，并且对光波四波混频的宽带宽信号光执行波长转换。 在波长转换系统（40）中，将具有λ1，λ2，...，λn波长的信号光中的任一个提供给包括用于放大信号光的光学放大器（41）的波长转换系统（40） 具有放大系数α，可调谐激光器（42）以及用于以放大系数β放大来自可调谐激光器（42）的输出激光的光放大器（43）。 在光放大器（41,42）中放大的光在光耦合器（45）中耦合并经由光环行器（46）和偏振分束器（47）提供给量子点光放大器（20）。 将1/2波长板（48）插入偏振分束器（48）的光学端口中，从中提取TM模式光并将其转换为TE模式光。

    Wavelength conversion device using nonlinear medium having quantum dots
    6.
    发明公开
    Wavelength conversion device using nonlinear medium having quantum dots 有权
    Wellenlängenumwandlungsvorrichtungmit einem nichtlinearen Medium mit Quantenpunkten

    公开(公告)号：EP2568328A2

    公开(公告)日：2013-03-13

    申请号：EP12195862.3

    申请日：2003-09-10

    Applicant: FUJITSU LIMITED

    Inventor： Akiyama, Tomoyuki ,  Hatori, Nobuaki ,  Sugawara, Mitsuru

    IPC: G02F1/35

    CPC classification number: B82Y20/00 ,  G02F1/3536 ,  G02F1/3556 ,  G02F2001/01791

    Abstract: A wavelength conversion device including a nonlinear medium (20) having quantum dots (24) uses a tunable laser as an excitation light source of optical four wave mixing, and performs wavelength conversion for a wide bandwidth signal light with optical four wave mixing. The nonlinear medium (20) is disposed on an n type GaAs [100] orientation substrate (21) and includes an n type AlGaAs clad layer (22) formed on the substrate (21) and a lower part SCH layer (23) including non-doped GaAs formed on the clad layer (22). An island-like area of non-doped InAs or InGaAs, which is formed by S-K mode growth is formed on the SCH layer (23) as quantum dots (24) and a non-doped GaAs barrier layer (25) is formed on the SCH layer (23) in a manner covering the quantum dots (24). An upper part SCH layer (27) including non-doped GaAs is formed on the acive layer (26) and a p type AlGaAs clad layer (28) is formed on the upper part SCH layer (27). An upper part electrode (29) is formed on the clad layer (28) and a lower part electrode (30) is formed on a bottom surface of the substrate (21).

    Abstract translation: 包括具有量子点（24）的非线性介质（20）的波长转换装置使用可调谐激光器作为光学四波混频的激发光源，并且对于具有光学四波混频的宽带宽信号光进行波长转换。 非线性介质（20）设置在n型GaAs [100]取向基板（21）上，并且包括形成在基板（21）上的n型AlGaAs覆盖层（22）和包括非线性介质（20）的下部SCH层 形成在包层（22）上的掺杂的GaAs。 在SCH层（23）上作为量子点（24）形成由SK模式生长形成的非掺杂InAs或InGaAs的岛状区域，并且在其上形成非掺杂GaAs势垒层（25） SCH层（23）以覆盖量子点（24）的方式。 在吸附层（26）上形成包含非掺杂GaAs的上部SCH层（27），在上层SCH层（27）上形成p型AlGaAs覆盖层（28）。 在包层（28）上形成上部电极（29），在基板（21）的底面上形成下部电极（30）。

    Wavelength conversion device based on optical four wave mixing
    7.
    发明授权
    Wavelength conversion device based on optical four wave mixing 有权
    基于光学四波混频的波长转换器件

    公开(公告)号：EP2568329B1

    公开(公告)日：2018-01-31

    申请号：EP12195866.4

    申请日：2003-09-10

    Applicant: FUJITSU LIMITED

    Inventor： Akiyama, Tomoyuki ,  Hatori, Nobuaki ,  Sugawara, Mitsuru

    IPC: G02F1/35

    CPC classification number: B82Y20/00 ,  G02F1/3536 ,  G02F1/3556 ,  G02F2001/01791

    Abstract: A wavelength conversion device including a nonlinear medium having quantum dots uses a tunable laser as an excitation light source of optical four wave mixing, and performs wavelength conversion for a wide bandwidth signal light with optical four wave mixing by employing a control apparatus for controlling an optical system including an optical path of a signal light and an optical system including an optical path of an excitation light in correspondence with a wavelength of a signal light that is to be wavelength converted.

    Wavelength conversion device using nonlinear medium having quantum dots
    8.
    发明公开
    Wavelength conversion device using nonlinear medium having quantum dots 有权
    使用具有量子点的非线性介质的波长转换装置

    公开(公告)号：EP2568328A3

    公开(公告)日：2013-12-11

    申请号：EP12195862.3

    申请日：2003-09-10

    Applicant: FUJITSU LIMITED

    Inventor： Akiyama, Tomoyuki ,  Hatori, Nobuaki ,  Sugawara, Mitsuru

    IPC: G02F1/35

    CPC classification number: B82Y20/00 ,  G02F1/3536 ,  G02F1/3556 ,  G02F2001/01791

    Abstract: A wavelength conversion device including a nonlinear medium (20) having quantum dots (24) uses a tunable laser as an excitation light source of optical four wave mixing, and performs wavelength conversion for a wide bandwidth signal light with optical four wave mixing. The nonlinear medium (20) is disposed on an n type GaAs [100] orientation substrate (21) and includes an n type AlGaAs clad layer (22) formed on the substrate (21) and a lower part SCH layer (23) including non-doped GaAs formed on the clad layer (22). An island-like area of non-doped InAs or InGaAs, which is formed by S-K mode growth is formed on the SCH layer (23) as quantum dots (24) and a non-doped GaAs barrier layer (25) is formed on the SCH layer (23) in a manner covering the quantum dots (24). An upper part SCH layer (27) including non-doped GaAs is formed on the acive layer (26) and a p type AlGaAs clad layer (28) is formed on the upper part SCH layer (27). An upper part electrode (29) is formed on the clad layer (28) and a lower part electrode (30) is formed on a bottom surface of the substrate (21).

    Abstract translation: 包括具有量子点（24）的非线性介质（20）的波长转换装置使用可调谐激光器作为光学四波混频的激励光源，并且对光学四波混频的宽带宽信号光执行波长转换。 非线性介质（20）设置在n型GaAs [100]取向基板（21）上并包括形成在基板（21）上的n型AlGaAs覆盖层（22）和包括非基板 形成在包层（22）上的掺杂GaAs。 在SCH层（23）上形成由SK模式生长形成的未掺杂InAs或InGaAs岛状区域作为量子点（24），并在其上形成未掺杂GaAs阻挡层（25） SCH层（23）覆盖量子点（24）。 包括未掺杂GaAs的上部SCH层（27）形成在活性层（26）上，并且在上部SCH层（27）上形成p型AlGaAs覆盖层（28）。 在包覆层（28）上形成上部电极（29），在基板（21）的下表面形成下部电极（30）。

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