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    SEMICONDUCTOR LASER DEVICE
    4.
    发明公开
    SEMICONDUCTOR LASER DEVICE 审中-公开
    高分子激光器

    公开(公告)号：EP1049221A1

    公开(公告)日：2000-11-02

    申请号：EP99970516.3

    申请日：1999-10-12

    Applicant: The Furukawa Electric Co., Ltd.

    Inventor： IWAI, Norihiro-The Furukawa Electric Co., Ltd. ,  MUKAIHARA, Toshikazu-The Furukawa Electric Co., Lt ,  KASUKAWA, Akihiko-The Furukawa Electric Co., Ltd. ,  SHIMIZU, Hitoshi-The Furukawa Electric Co., Ltd.

    IPC: H01S5/223

    CPC classification number: H01S5/2231 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/2215

    Abstract: A semiconductor laser device (20) has a multilayer structure including an n-InP clad layer (22), a SCH-MQW active layer (23), a first p-InP clad layer (24), a multilayer film (25) of p-AllInAs layer/p-AlAs layer, a second p-InP clad layer (26), and a p-GaInAs contact layer (27), all formed in multilayer on an n-InP substrate (21). The multilayer film (25) has a structure in which p-AllInAs layers (25a) and p-AlAs layers (25b) are alternated. Of the multilayer structure, the upper portion of the first p-InP clad layer, the multilayer film, the second p-InP clad layer, and the p-GaInAs contact layer are formed into stripelike ridges (32) having widths of about 10 µm. The side walls of the ridges of the multilayer film is an Al oxide layer (28) formed by selective oxidation of Al in the multilayer film. Thus, a semiconductor laser device having a current/optical confinement structure by virtue of an Al oxide layer on an InP substrate is provided.

    Abstract translation: 半导体激光装置（20）具有包括n-InP包层（22），SCH-MQW有源层（23），第一p-InP覆层（24），多层膜（25），多层膜 p-InInAs层/ p-AlAs层，第二p-InP覆盖层（26）和p-GaInAs接触层（27），均形成在n-InP衬底（21）上的多层中。 多层膜（25）具有交替地存在p-AllInAs层（25a）和p-AlAs层（25b）的结构。 在多层结构中，第一p-InP包覆层的上部，多层膜，第二p-InP覆盖层和p-GaInAs接触层形成为具有约10μm的宽度的带状隆起（32） 米 多层膜的脊的侧壁是通过多层膜中的Al的选择性氧化形成的Al氧化物层（28）。 因此，提供了具有通过InP衬底上的Al氧化物层的电流/光限制结构的半导体激光器件。

    Distributed feedback semiconductor laser device and multi-wavelength laser array
    8.
    发明公开
    Distributed feedback semiconductor laser device and multi-wavelength laser array 审中-公开
    Halbleiterlaservorrichtung mit verteilterRückkopplungundMehrwellenlängenvielfachlaser

    公开(公告)号：EP1130726A2

    公开(公告)日：2001-09-05

    申请号：EP01101737.3

    申请日：2001-01-25

    Applicant: THE FURUKAWA ELECTRIC CO., LTD.

    Inventor： Kasukawa, Akihiro, c/o The Furukawa Electric Co. ,  Iwai, Norihiro, c/o The Furukawa Electric Co., Ltd ,  Funabashi, Masaki, c/o The Furukawa Electric Co.

    IPC: H01S5/40 ,  H01S5/12

    CPC classification number: H01S5/12 ,  H01S5/2215 ,  H01S5/222 ,  H01S5/4031 ,  H01S5/4087

    Abstract: A distributed feedback semiconductor laser device including an active layer (18), a diffraction grating disposed in a vicinity of the active layer (18) and having a substantially uniform space period and a distributed feedback function, and a functional layer (28a and 32) disposed in a vicinity of the diffraction grating and the active layer (18) and having a function of controlling a refractive index of the active layer (18), whereby the functional layer controls a lasing wavelength of the active layer (18). The functional layer of controlling the refractive index of the distributed feedback semiconductor laser device can generate a plurality of the lasing wavelengths different among one another and easily controllable.

    Abstract translation: 一种分布式反馈半导体激光器件，包括有源层（18），设置在有源层（18）附近并且具有基本均匀的空间周期和分布反馈功能的衍射光栅以及功能层（28a和32） 设置在衍射光栅和有源层（18）附近，并且具有控制有源层（18）的折射率的功能，由此功能层控制有源层（18）的激光波长。 控制分布式反馈半导体激光器件的折射率的功能层可以产生彼此不同的多个激光波长并且易于控制。

    Semiconductor laser device and fabrication method
    9.
    发明公开
    Semiconductor laser device and fabrication method 审中-公开
    Photonisches Halbleiterement和Herstellungsverfahren

    公开(公告)号：EP1022827A2

    公开(公告)日：2000-07-26

    申请号：EP00400159.0

    申请日：2000-01-21

    Applicant: NEC CORPORATION

    Inventor： Yokoyama, Yoshitaka ,  Kudo, Koji ,  Tsuji, Masayoshi

    IPC: H01S5/227

    CPC classification number: H01S5/227 ,  H01S5/0265 ,  H01S5/2077 ,  H01S5/2215 ,  H01S5/2272 ,  H01S5/4031 ,  H01S5/4087

    Abstract: A semiconductor photonic element is provided, which realize low threshold current and satisfactory characteristics in the high temperatures and/or high output operating condition. This element is comprised of (a) a semiconductor substrate; (b) a mesa structure formed on a first surface of the substrate to extend in a specific direction; the mesa structure including an active layer and a pair of p- and n-type cladding layers located respectively at top and bottom sides of the active layer, forming a double heterojunction; (c)a current-constricting structure for constricting an injection current formed at each side of the mesa structure to expose a top of the mesa structure from the current-constricting structure; the current-constricting structure comprising a first current-blocking part and a second current-blocking part; the first current-blocking part having a dielectric current-blocking layer that extends to the mesa structure; the dielectric current-blocking layer being contacted with top edges of the mesa structure; the second current-blocking part having a semiconductor current-blocking layer; and (d) a semiconductor burying layer formed to cover the mesa structure and the multilayer current-constricting structure; the semiconductor burying layer being contacted with the top of the mesa structure.

    Abstract translation: 提供了一种半导体光子元件，其在高温和/或高输出操作条件下实现低阈值电流和令人满意的特性。 该元件由（a）半导体衬底构成; （b）形成在所述基板的第一表面上以沿特定方向延伸的台面结构; 所述台面结构包括分别位于所述有源层的顶侧和底侧的有源层和一对p型和n型覆层，形成双异质结; （c）用于收缩形成在台面结构的每一侧的注入电流的电流收缩结构，以从电流收缩结构露出台面结构的顶部; 电流收缩结构包括第一电流阻挡部分和第二电流阻挡部分; 所述第一电流阻挡部分具有延伸到所述台面结构的介电阻流层; 所述介质电流阻挡层与所述台面结构的顶部边缘接触; 所述第二电流阻挡部分具有半导体电流阻挡层; 以及（d）形成为覆盖所述台面结构和所述多层电流收缩结构的半导体掩埋层; 半导体掩埋层与台面结构的顶部接触。

    Deep native oxide confined ridge waveguide semiconductor lasers
    10.
    发明公开
    Deep native oxide confined ridge waveguide semiconductor lasers 有权
    Stegwellenleiter-Halbleiterlaser mit Begrenzung aus tief eindringendem nativen Oxyd。

    公开(公告)号：EP0905836A2

    公开(公告)日：1999-03-31

    申请号：EP98115466.9

    申请日：1998-08-17

    Applicant: Xerox Corporation

    Inventor： Sun, Decai

    IPC: H01S3/19 ,  H01S3/083

    CPC classification number: H01S5/227 ,  H01S5/10 ,  H01S5/1071 ,  H01S5/2215 ,  H01S5/2275

    Abstract: A ridge waveguide semiconductor laser structure fabricated by etching and wet oxidation. The upper cladding layer is partially etched forming a ridge and a native oxide layer is wet oxidized from the remaining upper cladding layer and the active region outside the ridge. The deep native oxide layer provides strong optical confinement to the ridge waveguide. Alternately, the active region can be narrower than the ridge waveguide in the laser structure. The ridge waveguide semiconductor laser structures with native oxide layers can also be curved geometry lasers such as ring lasers.

    Abstract translation: 通过蚀刻和湿氧化制造的脊形波导半导体激光器结构（100）。 上覆层（112）被部分蚀刻形成脊，并且自然氧化物层从剩余的上覆层（112）和在脊之外的有源区（106,108,110）被湿氧化。 深天然氧化物层（206）为脊形波导（208）提供强烈的光学限制。 或者，有源区（106,108,110）可以比激光结构中的脊波导（208）窄。 具有自然氧化物层（206）的脊形波导半导体激光器结构也可以是弯曲的几何形状激光器，例如环形激光器（400）。

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