公开(公告)号：EP2047504A2

公开(公告)日：2009-04-15

申请号：EP07870952.4

申请日：2007-04-24

申请人： Freescale Semiconductor, Inc.

发明人： RAO, Rajesh A. ,  LUO, Tien Ying ,  MURALIDHAR, Ramachandran ,  STEIMLE, Robert F ,  STRAUB, Sherry G.

IPC分类号： H01L21/336 ,  H01L21/3205

CPC分类号： H01L21/28273 ,  H01L21/28282 ,  H01L21/32134 ,  H01L27/11526 ,  H01L27/11531 ,  H01L27/11573 ,  Y10S977/774 ,  Y10S977/779 ,  Y10S977/78 ,  Y10S977/943

摘要： A method of making a semiconductor device includes a substrate (12) having a semiconductor layer (12) having a first portion (16) for non-volatile memory and a second portion (18) exclusive of the first portion (16). A first dielectric layer (14) is formed on the semiconductor layer. A plasma nitridation is performed on the first dielectric layer. A first plurality of nanoclusters (20) is formed over the first portion and a second plurality of nanoclusters (28) over the second portion. The second plurality of nanoclusters is removed. A second dielectric layer (38) is formed over the semiconductor layer. A conductive layer (40) is formed over the second dielectric layer.