公开(公告)号：EP1949426A2

公开(公告)日：2008-07-30

申请号：EP06816841.8

申请日：2006-10-11

申请人： Freescale Semiconductor, Inc.

发明人： WENZEL, Robert J. ,  LEAL, George R.

IPC分类号： H01L21/44

CPC分类号： H01L23/485 ,  H01L23/53238 ,  H01L24/02 ,  H01L2224/023 ,  H01L2224/0231 ,  H01L2224/02331 ,  H01L2224/02375 ,  H01L2224/02377 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/00

摘要： Fine pitch contacts (42, 44, 46, 48) are achieved by using traces (70, 72, 74, 76) that extend to the contacts without requiring capture pads at the contact pads. Capture pads are desirably avoided because they have a diameter greater than the line to which they are attached. Preferably, adjacent contact pads are present in the same opening in the dielectric. The traces (70, 72, 74, 76) to the contact pads (42, 44, 46, 48) are in a line so that no widening is required where the lines make contact to the contact pads. The lines (70, 72, 74, 76) can be widened before they get to the contact pads but at the contact pads, they are substantially at the minimum width for the line. Thus, the contact pads can be at a pitch much lower than if capture pads were used.