公开(公告)号：EP3125282A1

公开(公告)日：2017-02-01

申请号：EP14886877.1

申请日：2014-03-26

申请人： Mitsubishi Electric Corporation

发明人： YUASA, Takeshi ,  ISHIDA, Kiyoshi ,  TSUKAHARA, Yoshihiro ,  NISHIGUCHI, Kohei

IPC分类号： H01L21/60

CPC分类号： H01L23/66 ,  H01L23/481 ,  H01L23/49838 ,  H01L23/50 ,  H01L23/5283 ,  H01L24/02 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/14 ,  H01L2223/6683 ,  H01L2224/02331 ,  H01L2224/02371 ,  H01L2224/02372 ,  H01L2224/02375 ,  H01L2224/02377 ,  H01L2224/02379 ,  H01L2224/02381 ,  H01L2224/0401 ,  H01L2224/05569 ,  H01L2224/13024 ,  H01L2224/14131 ,  H01L2224/14133 ,  H01L2224/14135 ,  H01L2224/14136 ,  H01L2224/14156 ,  H01L2224/14177 ,  H01L2224/14515 ,  H01L2224/16227 ,  H05K1/0243 ,  H05K2201/10674 ,  H01L2924/00012

摘要： A surface mount high-frequency circuit is configured such that a plurality of ground pads 41 and a plurality of external connection ground conductors 51 are discretely disposed to surround a signal line pad 42 and an external connection signal line conductor 52, and a plurality of interlayer connection ground conductors 31 and that a plurality of columnar ground conductors 12 are discretely disposed to surround an interlayer connection signal line conductor 32. Thus, it is possible to suppress radiation of an unnecessary signal to the outside using a simple production process that is completed by only a wafer process without separately preparing a component such as a shield cover case.

摘要翻译： 表面安装高频电路被配置为使得多个接地焊盘41和多个外部连接接地导体51离散地设置成围绕信号线焊盘42和外部连接信号线导体52，以及多个中间层 连接接地导体31和多个柱状接地导体12离散地设置成围绕层间连接信号线导体32.因此，可以使用简单的制造过程来抑制对外部的不必要的信号的辐射，该简单的生产过程由 仅仅是晶片工艺，而不需要单独地制备诸如屏蔽罩壳的部件。

公开(公告)号：EP2414801A4

公开(公告)日：2016-11-16

申请号：EP10759186

申请日：2010-03-11

申请人： QUALCOMM INC

发明人： LIN MOU-SHIUNG ,  LEE JIN-YUAN ,  LO HSIN-JUNG ,  YANG PING-JUNG ,  LIU TE-SHENG

IPC分类号： G01L7/00 ,  G06F1/16 ,  G06F19/00 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L23/48 ,  H01L23/522 ,  H01L25/065 ,  H01L25/16 ,  H01L25/18

CPC分类号： G06F1/16 ,  G11C5/147 ,  H01L21/563 ,  H01L23/3128 ,  H01L23/3171 ,  H01L23/3192 ,  H01L23/481 ,  H01L23/5223 ,  H01L23/5227 ,  H01L23/60 ,  H01L23/66 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/50 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/16 ,  H01L25/18 ,  H01L25/50 ,  H01L2223/6611 ,  H01L2223/6666 ,  H01L2224/02166 ,  H01L2224/02311 ,  H01L2224/02313 ,  H01L2224/02321 ,  H01L2224/0233 ,  H01L2224/02331 ,  H01L2224/0235 ,  H01L2224/0237 ,  H01L2224/02371 ,  H01L2224/02375 ,  H01L2224/02381 ,  H01L2224/0239 ,  H01L2224/024 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/03612 ,  H01L2224/03614 ,  H01L2224/03912 ,  H01L2224/0392 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05024 ,  H01L2224/05027 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05176 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05541 ,  H01L2224/05548 ,  H01L2224/05554 ,  H01L2224/0556 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/056 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/05673 ,  H01L2224/05676 ,  H01L2224/11 ,  H01L2224/11009 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/1191 ,  H01L2224/13 ,  H01L2224/13006 ,  H01L2224/1302 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13084 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13169 ,  H01L2224/13294 ,  H01L2224/133 ,  H01L2224/13311 ,  H01L2224/13609 ,  H01L2224/1403 ,  H01L2224/1411 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16245 ,  H01L2224/16265 ,  H01L2224/17181 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29294 ,  H01L2224/293 ,  H01L2224/29339 ,  H01L2224/32105 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48111 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48664 ,  H01L2224/48669 ,  H01L2224/48764 ,  H01L2224/48769 ,  H01L2224/48824 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48864 ,  H01L2224/4911 ,  H01L2224/49175 ,  H01L2224/4918 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73207 ,  H01L2224/73215 ,  H01L2224/73253 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2224/81191 ,  H01L2224/81411 ,  H01L2224/81444 ,  H01L2224/81801 ,  H01L2224/81815 ,  H01L2224/8185 ,  H01L2224/81895 ,  H01L2224/81903 ,  H01L2224/83101 ,  H01L2224/83104 ,  H01L2224/83851 ,  H01L2224/92 ,  H01L2224/9202 ,  H01L2224/92125 ,  H01L2224/92127 ,  H01L2224/92147 ,  H01L2224/92225 ,  H01L2224/92247 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06562 ,  H01L2225/06589 ,  H01L2225/1023 ,  H01L2225/1029 ,  H01L2225/1058 ,  H01L2225/107 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01059 ,  H01L2924/01068 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1421 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19104 ,  H01L2924/19105 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/48869 ,  H01L2224/48744 ,  H01L2924/00012 ,  H01L2224/03 ,  H01L2224/0361 ,  H01L2924/0665 ,  H01L2224/81 ,  H01L2224/83 ,  H01L24/78 ,  H01L2224/85 ,  H01L21/56 ,  H01L21/78 ,  H01L2924/0635 ,  H01L2924/07025 ,  H01L21/304 ,  H01L21/76898 ,  H01L2224/0231

公开(公告)号：EP3031079A1

公开(公告)日：2016-06-15

申请号：EP14750930.1

申请日：2014-07-30

申请人： Qualcomm Incorporated

发明人： HAU-RIEGE, Christine Sung-An ,  YAU, You-Wen ,  CAFFEY, Kevin, Patrick ,  KESER, Lizabeth, Ann ,  MCALLISTER, Gene, H. ,  ALVARADO, Reynante, Tamunan ,  BEZUK, Steve, J. ,  GASTELUM, Damion, Bryan

IPC分类号： H01L23/532

CPC分类号： H01L23/485 ,  H01L21/76841 ,  H01L21/76895 ,  H01L23/525 ,  H01L23/53238 ,  H01L23/53266 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0231 ,  H01L2224/02331 ,  H01L2224/0239 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/05024 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05548 ,  H01L2224/05572 ,  H01L2224/05582 ,  H01L2224/05583 ,  H01L2224/05647 ,  H01L2224/05657 ,  H01L2224/1134 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/94 ,  H01L2924/01074 ,  H01L2924/00014 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2924/014

摘要： Some implementations provide a semiconductor device (e.g., die) that includes a substrate, several metal layers and dielectric layers coupled to the substrate, a pad coupled to one of the plurality of metal layers, a first metal redistribution layer coupled to the pad, and a second metal redistribution layer coupled to the first metal redistribution layer. The second metal redistribution layer includes a cobalt tungsten phosphorous material. In some implementations, the first metal redistribution layer is a copper layer. In some implementations, the semiconductor device further includes a first underbump metallization (UBM) layer and a second underbump metallization (UBM) layer.

公开(公告)号：EP2471096A4

公开(公告)日：2015-04-29

申请号：EP10824354

申请日：2010-10-21

申请人： ATI TECHNOLOGIES ULC

发明人： TOPACIO RODEN ,  WONG GABRIEL

IPC分类号： H01L23/485 ,  H01L21/60

CPC分类号： H01L23/49816 ,  H01L23/562 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L2224/0233 ,  H01L2224/02331 ,  H01L2224/02375 ,  H01L2224/02381 ,  H01L2224/0239 ,  H01L2224/0401 ,  H01L2224/05005 ,  H01L2224/05008 ,  H01L2224/05012 ,  H01L2224/05013 ,  H01L2224/05014 ,  H01L2224/05015 ,  H01L2224/05022 ,  H01L2224/05552 ,  H01L2224/05553 ,  H01L2224/05559 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/05582 ,  H01L2224/05583 ,  H01L2224/05599 ,  H01L2224/06131 ,  H01L2224/1132 ,  H01L2224/13007 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/81815 ,  H01L2924/00 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01052 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/351 ,  H01L2924/0105 ,  H01L2924/01083 ,  H01L2924/01028 ,  H01L2924/01031 ,  H01L2224/13099 ,  H01L2224/05099 ,  H01L2224/13599 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00012

摘要： A routing layer for a semiconductor die is disclosed. The routing layer includes pads for attaching solder bumps; bond-pads bonded to bump-pads of a die having an integrated circuit, and traces interconnecting bond-pads to pads. The routing layer is formed on a layer of dielectric material. The routing layer includes conductive traces at least partially surrounding some pads so as to absorb stress from solder bumps attached to the pads. Parts of the traces that surround pads protect parts of the underlying dielectric material proximate the solder bumps, from the stress.

摘要翻译： 公开了一种用于半导体管芯的布线层。 布线层包括用于附接焊料凸块的焊盘; 键合焊盘结合到具有集成电路的管芯的凸点焊盘，以及将互连的接合焊盘迹迹到焊盘。 布线层形成在介电材料层上。 路由层包括至少部分地围绕一些焊盘的导电迹线，以便吸收附着在焊盘上的焊料凸块的应力。 围绕焊盘的迹线的一部分保护靠近焊料凸块的基底电介质材料的部分免受应力的影响。

公开(公告)号：EP1932173A4

公开(公告)日：2013-06-05

申请号：EP06814056

申请日：2006-08-31

申请人： TEXAS INSTRUMENTS INC

发明人： LANGE BERNHARD P ,  COYLE ANTHONY L ,  MAI QUANG X

IPC分类号： H01L23/528 ,  H01L21/60 ,  H01L23/485

CPC分类号： H01L23/53238 ,  H01L23/3121 ,  H01L23/3192 ,  H01L23/528 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/81 ,  H01L24/94 ,  H01L2224/02311 ,  H01L2224/02313 ,  H01L2224/02331 ,  H01L2224/0235 ,  H01L2224/02375 ,  H01L2224/0239 ,  H01L2224/0345 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05024 ,  H01L2224/05073 ,  H01L2224/05166 ,  H01L2224/05647 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11912 ,  H01L2224/13013 ,  H01L2224/13082 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/14133 ,  H01L2224/16225 ,  H01L2224/16245 ,  H01L2224/81191 ,  H01L2224/81424 ,  H01L2224/81447 ,  H01L2224/8146 ,  H01L2224/81815 ,  H01L2224/94 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/30107 ,  H01L2924/3841 ,  H01L2924/00014 ,  H01L2224/11 ,  H01L2224/03 ,  H01L2924/01028 ,  H01L2224/05193 ,  H01L2924/013 ,  H01L2924/00

摘要： A method for fabricating a low resistance, low inductance device for high current semiconductor flip-chip products. A structure is produced, which comprises a semiconductor chip with metallization traces, copper lines in contact with the traces, and copper bumps located in an orderly and repetitive arrangement on each line so that the bumps of one line are positioned about midway between the corresponding bumps of the neighboring lines. A substrate is provided which has elongated copper leads with first and second surfaces, the leads oriented at right angles to the lines. The first surface of each lead is connected to the corresponding bumps of alternating lines using solder elements. Finally, the assembly is encapsulated in molding compound so that the second lead surfaces remain un-encapsulated.

公开(公告)号：EP1949426A4

公开(公告)日：2012-07-25

申请号：EP06816841

申请日：2006-10-11

申请人： FREESCALE SEMICONDUCTOR INC

发明人： WENZEL ROBERT J ,  LEAL GEORGE R

IPC分类号： H01L21/44 ,  H01L23/485

CPC分类号： H01L23/485 ,  H01L23/53238 ,  H01L24/02 ,  H01L2224/023 ,  H01L2224/0231 ,  H01L2224/02331 ,  H01L2224/02375 ,  H01L2224/02377 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/00

公开(公告)号：EP2471096A1

公开(公告)日：2012-07-04

申请号：EP10824354.4

申请日：2010-10-21

申请人： ATI Technologies ULC

发明人： TOPACIO, Roden ,  WONG, Gabriel

IPC分类号： H01L23/488 ,  H01L23/50

CPC分类号： H01L23/49816 ,  H01L23/562 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L2224/0233 ,  H01L2224/02331 ,  H01L2224/02375 ,  H01L2224/02381 ,  H01L2224/0239 ,  H01L2224/0401 ,  H01L2224/05005 ,  H01L2224/05008 ,  H01L2224/05012 ,  H01L2224/05013 ,  H01L2224/05014 ,  H01L2224/05015 ,  H01L2224/05022 ,  H01L2224/05552 ,  H01L2224/05553 ,  H01L2224/05559 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/05582 ,  H01L2224/05583 ,  H01L2224/05599 ,  H01L2224/06131 ,  H01L2224/1132 ,  H01L2224/13007 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/81815 ,  H01L2924/00 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01052 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/351 ,  H01L2924/0105 ,  H01L2924/01083 ,  H01L2924/01028 ,  H01L2924/01031 ,  H01L2224/13099 ,  H01L2224/05099 ,  H01L2224/13599 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00012

摘要： A routing layer for a semiconductor die is disclosed. The routing layer includes pads for attaching solder bumps; bond-pads bonded to bump-pads of a die having an integrated circuit, and traces interconnecting bond-pads to pads. The routing layer is formed on a layer of dielectric material. The routing layer includes conductive traces at least partially surrounding some pads so as to absorb stress from solder bumps attached to the pads. Parts of the traces that surround pads protect parts of the underlying dielectric material proximate the solder bumps, from the stress.

公开(公告)号：EP2076922A1

公开(公告)日：2009-07-08

申请号：EP08765221.0

申请日：2008-05-30

申请人： Casio Computer Co., Ltd.

发明人： MIZUSAWA, Aido ,  OKADA, Osamu ,  WAKABAYASHI, Takeshi ,  MIHARA, Ichiro

IPC分类号： H01L23/31 ,  H01L23/485 ,  H01L23/525

CPC分类号： H01L23/3114 ,  H01L23/525 ,  H01L23/5329 ,  H01L23/53295 ,  H01L24/02 ,  H01L24/11 ,  H01L24/12 ,  H01L24/94 ,  H01L2224/0231 ,  H01L2224/0233 ,  H01L2224/02331 ,  H01L2224/0401 ,  H01L2224/1147 ,  H01L2224/12105 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/274 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2224/13099 ,  H01L2924/00

摘要： A semiconductor device includes a semiconductor substrate (1) on which a structure portion (3) is provided except a peripheral portion thereof, and has a laminated structure including low dielectric films (4) and wiring lines (5), the low dielectric films having a relative dielectric constant of 3.0 or lower and a glass transition temperature of 400°C or higher. An insulating film (9) is formed on the structure portion (3). A connection pad portion is arranged on the insulating film (9) and connected to an uppermost wiring line (5) of the laminated structure portion (3). A bump electrode (13) is provided on the connection pad portion. A sealing film (14) made of an organic resin is provided on a part of the insulating film (9) which surrounds the bump electrode (13). Side surfaces of the laminated structure portion (3) are covered with the insulating film (9) and/or the sealing film (14).

公开(公告)号：EP1932173A2

公开(公告)日：2008-06-18

申请号：EP06814056.5

申请日：2006-08-31

申请人： Texas Instruments Incorporated

发明人： LANGE, Bernhard, P. ,  COYLE, Anthony, L. ,  MAI, Quang, X.

IPC分类号： H01L21/44

CPC分类号： H01L23/53238 ,  H01L23/3121 ,  H01L23/3192 ,  H01L23/528 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/81 ,  H01L24/94 ,  H01L2224/02311 ,  H01L2224/02313 ,  H01L2224/02331 ,  H01L2224/0235 ,  H01L2224/02375 ,  H01L2224/0239 ,  H01L2224/0345 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05024 ,  H01L2224/05073 ,  H01L2224/05166 ,  H01L2224/05647 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11912 ,  H01L2224/13013 ,  H01L2224/13082 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/14133 ,  H01L2224/16225 ,  H01L2224/16245 ,  H01L2224/81191 ,  H01L2224/81424 ,  H01L2224/81447 ,  H01L2224/8146 ,  H01L2224/81815 ,  H01L2224/94 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/30107 ,  H01L2924/3841 ,  H01L2924/00014 ,  H01L2224/11 ,  H01L2224/03 ,  H01L2924/01028 ,  H01L2224/05193 ,  H01L2924/013 ,  H01L2924/00

摘要： A method for fabricating a low resistance, low inductance device for high current semiconductor flip-chip products. A structure is produced, which comprises a semiconductor chip (101) with metallization traces (102), copper lines in contact with the traces, and copper bumps located in an orderly and repetitive arrangement on each line so that the bumps of one line are positioned about midway between the corresponding bumps of the neighboring lines. A substrate is provided which has elongated copper leads with first and second surfaces, the leads oriented at right angles to the lines. The first surface of each lead is connected to the corresponding bumps of alternating lines using solder elements.- Finally, the assembly is encapsulated in molding compound so that the second lead surfaces remain un-encapsulated.

公开(公告)号：EP1684339A3

公开(公告)日：2007-03-14

申请号：EP06001010.5

申请日：2006-01-18

申请人： SEIKO EPSON CORPORATION

发明人： Nakayama, Hirohisa ,  Sato, Shiro ,  Shoji, Masanobu ,  Nosaka, Hitoshi

IPC分类号： H01L21/60

CPC分类号： H05K3/3489 ,  H01L21/4853 ,  H01L21/563 ,  H01L23/49816 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/81 ,  H01L24/83 ,  H01L2224/02166 ,  H01L2224/02331 ,  H01L2224/0236 ,  H01L2224/02377 ,  H01L2224/02381 ,  H01L2224/0239 ,  H01L2224/0381 ,  H01L2224/0391 ,  H01L2224/0401 ,  H01L2224/05624 ,  H01L2224/06131 ,  H01L2224/06155 ,  H01L2224/11 ,  H01L2224/1191 ,  H01L2224/13 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81801 ,  H01L2224/83851 ,  H01L2924/00 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/00014

摘要： A method of manufacturing a semiconductor device includes: applying a paste containing acid to an electrical connection section which is electrically connected with a semiconductor substrate; removing the paste from the electrical connection section by washing the electrical connection section; and providing a conductive material to the electrical connection section.