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公开(公告)号：EP0676484B1
公开(公告)日：1999-03-24
申请号：EP95201231.8
申请日：1990-08-22
CPC分类号： C23C16/271 , C23C16/01 , C23C16/27 , C23C16/279 , Y10S428/938
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公开(公告)号：EP0550202B1
公开(公告)日：1996-04-24
申请号：EP92311448.2
申请日：1992-12-15
CPC分类号： C23C16/278 , C04B35/806 , C23C16/01 , C23C16/271
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公开(公告)号：EP0692690A1
公开(公告)日：1996-01-17
申请号：EP95303425.3
申请日：1995-05-23
CPC分类号： F27D11/02 , F27B17/0016
摘要： An apparatus for annealing diamond water jet mixing tubes comprises an enclosure, a vertical cylindrical heating tube in said enclosure, heating means (11,13) for said heating tube (7) and a rack in said heating tube (7) to support the diamond mixing tube (9). Annealing relieves internal tensile stresses which can decrease the life of the mixing tube.
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5.发明公开Apparatus and method for chemical vapor deposition of diamond 失效Vorrichtung und Verfahren zur Diamantabscheidung mittels CVD。
公开(公告)号：EP0671481A1
公开(公告)日：1995-09-13
申请号：EP95300514.7
申请日：1995-01-27
CPC分类号： C23C16/279 , C23C16/271 , C23C16/458 , C30B25/02 , C30B29/04 , Y10T428/30
摘要： Diamond is produced by chemical vapor deposition on a substrate by hot filament activation of a hydrogen-hydrocarbon gas mixture. An edge of the substrate faces the filament at a distance therefrom up to about 1 mm. and preferably about 0.3-0.7 mm., and the substrate is moved relative to the filament to maintain this spacing as diamond forms thereon. Diamond formation proceeds at an improved rate, and in single crystal configuration under certain conditions.
摘要翻译： 通过氢 - 碳氢化合物气体混合物的热丝活化，通过化学气相沉积在基底上产生金刚石。 基板的边缘一段距离地对着细丝; 从而高达约1mm。 并且优选约0.3-0.7mm，并且基底相对于细丝移动以将该间隔保持为其上的金刚石形状。 金刚石的形成以一定的条件进行，在单晶构造中。
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公开(公告)号：EP0609621A1
公开(公告)日：1994-08-10
申请号：EP93309931.9
申请日：1993-12-09
CPC分类号： C23C16/52 , C23C16/045
摘要： The thickness of a layer of material deposited by chemical vapor deposition, especially a diamond layer, is monitored by providing at least one substrate on which the material is deposited, with at least one perforation of a predetermined size therein. The relationship between the thickness of the layer formed in said perforation and the thickness of the layer formed on the substrate surface is determined, so that the thickness of the surface layer can be determined from the thickness of the layer formed in the perforation.
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7.发明授权Apparatus for synthetic diamond deposition including curved filaments and substrate cooling means 失效用于与弯曲长丝和衬底冷却装置生产合成金刚石的装置。
公开(公告)号：EP0417434B1
公开(公告)日：1994-06-15
申请号：EP90114049.1
申请日：1990-07-23
发明人： Anthony, Thomas Richard , DeVries, Robert Charles , Engler, Richard Allen , Ettinger, Robert Helmut , Fleischer, James Fulton
CPC分类号： C23C16/463 , C23C16/271 , C23C16/46 , Y10T117/10
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公开(公告)号：EP0569117A2
公开(公告)日：1993-11-10
申请号：EP93301544.8
申请日：1993-03-01
CPC分类号： C23C16/27 , C23C16/01 , Y10T29/49432 , Y10T29/4981 , Y10T29/49984 , Y10T428/12229
摘要： An improved method of producing articles by chemical vapor deposition comprises machining an appropriate shape on a suitable substrate (2), positioning an insert (8) within the shape, depositing a support member material (10) on the shape and the insert to produce a support member, separating the support member from the substrate, chemically vapor depositing an article material on the support member and etching away the support member to produce a free standing article, such as a funnel shaped diamond water-jet mixing tube.
摘要翻译： 通过化学气相沉积制造制品的改进方法包括在合适的基底上加工合适的形状，将插入物定位在形状内，将支撑构件材料沉积在形状上和插入件上以产生支撑构件，将支撑构件与 衬底，在支撑构件上化学气相沉积制品材料并蚀刻掉支撑构件以产生独立制品，例如漏斗形金刚石喷射混合管。
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9.发明公开Metal growth accelerator shell for the chemical vaporization deposition of diamond 失效面板由金属制成的用于通过CVD金刚石的沉积期间提高的生长速率。
公开(公告)号：EP0492159A1
公开(公告)日：1992-07-01
申请号：EP91120135.8
申请日：1991-11-26
CPC分类号： C23C16/271
摘要： The rate at which diamond is deposited by chemical vapor deposition on a substrate is increased by the presence of an expediting metal such as molybdenum in the surface of a wall exposed to the chemical vapor deposition.
摘要翻译： 在金刚石是通过化学气相沉积沉积在底物的速率是通过加快金属的存在下增加：如在暴露于化学汽相沉积的壁的表面的钼。
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10.发明公开CVD diamond by alternating chemical reactions 失效CVD Diamant mittels abwechselnden chemischen Reaktionen。
公开(公告)号：EP0487897A1
公开(公告)日：1992-06-03
申请号：EP91118044.6
申请日：1991-10-23
CPC分类号： C23C16/27 , C23C16/277 , C30B25/02 , C30B29/04
摘要： The present invention relates to a method for growing diamond on a diamond substrate by chemical vapor deposition. The inventive method comprises alternatingly contacting at elevated temperature said diamond substrate with a gas having the formula C n X m and then with a gas having the formula C l Z p . X and Z each form single bonds with carbon. X and Z also are reactable to form ZX or a derivative thereof. The Z-X bond is stronger than the C-X bond and also is stronger than the C-Z bond. In the formulas, n, m, l, and p are integers. If C n X m and C l Z p do not react in the gas phase, then a gas mixture of them can be used to grow diamond instead of the alternating exposure of one and then the other.
摘要翻译： 本发明涉及通过化学气相沉积在金刚石基底上生长金刚石的方法。 本发明的方法包括在升高的温度下使所述金刚石基底与具有式C n X m的气体交替接触，然后与具有式ClZp的气体交替接触。 X和Z各自与碳形成单键。 X和Z也可以反应形成ZX或其衍生物。 Z-X键比C-X键强，也比C-Z键强。 在公式中，n，m，l和p是整数。 如果CnXm和ClZp在气相中没有反应，则可以使用它们的气体混合物来生长金刚石而不是一个而另一个的交替暴露。
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