专利检索 ap:("Georgia Tech Research Corporation") AND inv:"GUNNING, Brendan Patrick" 第 1 页

1.

发明公开
SYSTEM AND METHOD FOR INCREASING III-NITRIDE SEMICONDUCTOR GROWTH RATE AND REDUCING DAMAGING ION FLUX 审中-公开
标题翻译：提高III族氮化物半导体生长速率并减少损伤离子通量的系统和方法

公开(公告)号：EP3311395A1

公开(公告)日：2018-04-25

申请号：EP16812470.9

申请日：2016-06-16

申请人： Georgia Tech Research Corporation

发明人： DOOLITTLE, William Alan , CLINTON, Evan A. , FABIEN, Chloe A.M. , GUNNING, Brendan Patrick , MEROLA, Joseph J.

IPC分类号： H01L21/205 , C23C16/50 , C30B29/38 , H01L21/00 , H01L21/20

CPC分类号： C30B23/025 , C23C14/0641 , C23C14/221 , C23C16/303 , C23C16/452 , C23C16/50 , C30B23/02 , C30B29/406 , C30B31/06 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02631

摘要： Systems and methods are disclosed for rapid growth of Group III metal nitrides using plasma assisted molecular beam epitaxy. The disclosure includes higher pressure and flow rates of nitrogen in the plasma, and the application of mixtures of nitrogen and an inert gas. Growth rates exceeding 8 μm/hour can be achieved.