专利检索 ap:("GlobalWafers Co., Ltd.") AND inv:"WU, Yu-Chaio" 第 1 页

1.

发明公开
METHODS FOR PRODUCING A SINGLE CRYSTAL SILICON INGOT USING BORIC ACID AS A DOPANT AND INGOT PULLER APPARATUS THAT USE A SOLID-PHASE DOPANT 审中-实审

公开(公告)号：EP4394095A2

公开(公告)日：2024-07-03

申请号：EP24159431.6

申请日：2020-05-18

申请人： GlobalWafers Co., Ltd.

发明人： LUTER, William L. , SREEDHARAMURTHY, Hariprasad , HARINGER, Stephan , PHILLIPS, Richard J. , ZHANG, Nan , WU, Yu-Chaio

IPC分类号： C30B35/00

CPC分类号： C30B15/04 , C30B29/06

摘要： Methods for producing a silicon crystal silicon ingot are disclosed. The ingot is doped with boron using solid-phase boric acid as the source of boron. Boric acid may be used to counter-dope the ingot during ingot growth. Ingot puller apparatus that use a solid-phase dopant are also disclosed. The solid-phase dopant may be disposed in a receptacle that is moved closer to the surface of the melt or a vaporization unit may be used to produce a dopant gas from the solid-phase dopant.

2.

发明公开
METHODS FOR PRODUCING A SINGLE CRYSTAL SILICON INGOT USING BORIC ACID AS A DOPANT AND INGOT PULLER APPARATUS THAT USE A SOLID-PHASE DOPANT 审中-公开

公开(公告)号：EP3990683A1

公开(公告)日：2022-05-04

申请号：EP20730890.9

申请日：2020-05-18

申请人： GlobalWafers Co., Ltd.

发明人： LUTER, William L. , SREEDHARAMURTHY, Hariprasad , HARINGER, Stephan , PHILLIPS, Richard J. , ZHANG, Nan , WU, Yu-Chaio

IPC分类号： C30B15/04 , C30B29/06 , C30B35/00