利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

26 条记录 (耗时 0.013 秒)

    FINE GRAINED, NON BANDED, REFRACTORY METAL SPUTTERING TARGETS WITH A UNIFORMLY RANDOM CRYSTALLOGRAPHIC ORIENTATION, METHOD FOR MAKING SUCH FILM, AND THIN FILM BASED DEVICES AND PRODUCTS MADE THERE FROM
    1.
    发明公开
    FINE GRAINED, NON BANDED, REFRACTORY METAL SPUTTERING TARGETS WITH A UNIFORMLY RANDOM CRYSTALLOGRAPHIC ORIENTATION, METHOD FOR MAKING SUCH FILM, AND THIN FILM BASED DEVICES AND PRODUCTS MADE THERE FROM 审中-公开
    细晶NICHTZEILIGE难熔金属终端与均匀随机晶体取向，用于生产制作了等薄膜的薄膜和制品基于设备和产品PUTTER

    公开(公告)号：EP2155419A2

    公开(公告)日：2010-02-24

    申请号：EP08755010.9

    申请日：2008-05-02

    申请人： H.C. Starck Inc. ,  H.C. Starck GmbH

    发明人： MILLER, Steven, A. ,  KUMAR, Prabhat ,  WU, Richard ,  SUN, Shuwei ,  ZIMMERMANN, Stefan ,  SCHMIDT-PARK, Olaf

    IPC分类号： B22F1/00 ,  C22C1/04 ,  C23C4/12 ,  C23C14/34

    CPC分类号： C23C14/3414 ,  B22F1/0014 ,  C22C1/045 ,  C23C4/134 ,  C23C14/0057 ,  C23C14/0089 ,  C23C14/0641 ,  C23C14/08 ,  C23C14/14 ,  C23C24/04 ,  H01J37/3426 ,  H01J2237/332

    摘要： The invention relates to a sputtering target which has a fine uniform equiaxed grain structure of less than 44 microns, no preferred texture orientation as measured by electron back scattered diffraction ("EBSD") and that displays no grain size banding or texture banding throughout the body of the target. The invention relates a sputtering target with a lenticular or flattened grain structure, no preferred texture orientation as measured by EBSD and that displays no grain size or texture banding throughout the body of the target and where the target has a layered structure incorporating a layer of the sputtering material and at least one additional layer at the backing plate interface, said layer has a coefficient of thermal expansion ("CTE") value between the CTE of the backing plate and the CTE of the layer of sputtering material.; The invention also relates to thin films and their use of using the sputtering target and other applications, such as coatings, solar devices, semiconductor devices etc. The invention further relates to a process to repair or rejuvenate a sputtering target.

    摘要翻译： 本发明涉及通过电子背散射衍射（“EBSD”）作为测量并做不显示粒度条带或织构条带在整个主体，其具有小于44微米，不优选的纹理方向精细均匀的等轴晶粒结构的溅射靶 的目标。 本发明涉及具有透镜状的或扁平的晶粒结构，无优选纹理方向的溅射靶通过EBSD作为测量并做不显示晶粒尺寸或织构条带在整个靶的主体，并且其中所述目标具有层状结构包含的一个层 背板的CTE和溅射材料的层的CTE之间的背板接口溅射材料和至少一种另外的层，所述层具有的热膨胀系数（“CTE”）值。 因此，本发明涉及薄膜和它们的使用的溅射靶和其它应用中，颜色的：如涂料，太阳能器件，半导体器件等。本发明进一步涉及一工艺，以修复或重振的溅射靶。

    Fine grained, non banded, refractory metal sputtering targets with a uniformly random crystallographic orientation, method for making such film, and thin film based devices and products made there from
    2.
    发明公开
    Fine grained, non banded, refractory metal sputtering targets with a uniformly random crystallographic orientation, method for making such film, and thin film based devices and products made there from 审中-公开
    细粒度，而不是条纹具有均匀随机晶体取向基于薄膜器件及其产品耐火金属溅射靶，制造这种层的方法，和

    公开(公告)号：EP2706129A1

    公开(公告)日：2014-03-12

    申请号：EP13184639.6

    申请日：2008-05-02

    申请人： H.C. STARCK, Inc. ,  H.C. Starck GmbH

    发明人： MILLER, Steven ,  KUMAR, Prabhat ,  WU, Richard ,  SUN, Shuwei ,  ZIMMERMANN, Stefan ,  SCHMIDT-PARK, Olaf

    IPC分类号： C23C14/34 ,  H01J35/08 ,  B22F7/00

    CPC分类号： C23C14/3414 ,  B22F1/0014 ,  C22C1/045 ,  C23C4/134 ,  C23C14/0057 ,  C23C14/0089 ,  C23C14/0641 ,  C23C14/08 ,  C23C14/14 ,  C23C24/04 ,  H01J37/3426 ,  H01J2237/332

    摘要： The invention relates to a sputtering target which has a fine uniform equiaxed grain structure of less than 44 microns, no preferred texture orientation as measured by electron back scattered diffraction ("EBSD") and that displays no grain size banding or texture banding throughout the body of the target. The invention relates a sputtering target with a lenticular or flattened grain structure, no preferred texture orientation as measured by EBSD and that displays no grain size or texture banding throughout the body of the target and where the target has a layered structure incorporating a layer of the sputtering material and at least one additional layer at the backing plate interface, said layer has a coefficient of thermal expansion ("CTE") value between the CTE of the backing plate and the CTE of the layer of sputtering material.; The invention also relates to thin films and their use of using the sputtering target and other applications, such as coatings, solar devices, semiconductor devices etc. The invention further relates to a process to repair or rejuvenate a sputtering target.

    摘要翻译： 本发明涉及通过电子背散射衍射（“EBSD”）作为测量并做不显示粒度条带或织构条带在整个主体，其具有小于44微米，不优选的纹理方向精细均匀的等轴晶粒结构的溅射靶 的目标。 本发明涉及具有透镜状的或扁平的晶粒结构，无优选纹理方向的溅射靶通过EBSD作为测量并做不显示晶粒尺寸或织构条带在整个靶的主体，并且其中所述目标具有层状结构包含的一个层 背板的CTE和溅射材料的层的CTE之间的背板接口溅射材料和至少一种另外的层，所述层具有的热膨胀系数（“CTE”）值。 因此，本发明涉及薄膜和它们的使用的溅射靶和其它应用中，颜色的：如涂料，太阳能器件，半导体器件等。本发明进一步涉及一工艺，以修复或重振的溅射靶。

    MOLYBDENUM ALLOY X-RAY TARGETS HAVING UNIFORM GRAIN STRUCTURE
    3.
    发明公开
    MOLYBDENUM ALLOY X-RAY TARGETS HAVING UNIFORM GRAIN STRUCTURE 有权
    MOLYBDENLEGIERUNGS-RÖNTGENTARGETSMITGLEICHFÖRMIGERKORNSTRUKTUR

    公开(公告)号：EP1618586A2

    公开(公告)日：2006-01-25

    申请号：EP04750140.8

    申请日：2004-04-15

    申请人： H.C. Starck Inc.

    发明人： DAILY, James ,  LEMON, Brad ,  HIRT, Joseph ,  KUMAR, Prabhat ,  GILLE, Gerhard

    IPC分类号： H01J37/00

    CPC分类号： C22B34/34 ,  B21C23/001 ,  B21C23/01 ,  B21J1/025 ,  B21J5/00 ,  B22F3/16 ,  B22F3/162 ,  B22F3/24 ,  B22F2003/248 ,  B22F2998/00 ,  B22F2998/10 ,  C22C1/02 ,  C22C1/1094 ,  C22C27/04 ,  C22C32/0031 ,  C22F1/18 ,  C23C14/3414 ,  H01J2235/081 ,  H05H6/00 ,  B22F9/24 ,  B22F3/20 ,  B22F3/17

    摘要： The invention relates to a process for making a cross-directionally worked molybdenum plate, the process comprising: (a) reducing ammonium molybdate and forming molybdenum metal powder; (b) consolidating a molybdenum component comprised of molybdenum metal powder and an alloying element to a first workpiece, the alloying element being selected from the group consisting of titanium, zirconium, hafnium, carbon, lanthanum oxide, and combinations thereof; (c) thermally treating the first workpiece and subjecting the workpiece to thermo-mechanical forces in a first direction, and thereby forming a second workpiece; (d) thermally treating the second workpiece and subjecting the second workpiece to thermo-mechanical forces in a second direction that is different from the first direction; (e) subjecting the thermomechanically treated second workpiece to a recrystallization heat treatment step, and thereby forming a heat-treated cross-directionally worked workpiece; and (f) subjecting the heat-treated, cross-directionally worked workpiece to a slicing step or a machining step, and thereby forming the cross­directionally worked molybdenum plate. The invention also relates to X-ray targets made from the process.

    摘要翻译： 本发明涉及制造交叉方向加工的钼板的方法，该方法包括：（a）还原钼酸铵并形成钼金属粉末; （b）将由钼金属粉末和合金元素组成的钼组分固结到第一工件上，所述合金元素选自钛，锆，铪，碳，氧化镧及其组合; （c）对第一工件进行热处理并使工件在第一方向上受到热机械力，从而形成第二工件; （d）对所述第二工件进行热处理并使所述第二工件在与所述第一方向不同的第二方向上进行热机械力; （e）对热机械处理的第二工件进行再结晶热处理步骤，从而形成经热处理的横向加工的工件; 和（f）对经热处理的交叉方向加工的工件进行切片步骤或机械加工步骤，从而形成交叉加工的钼板。 本发明还涉及由该方法制成的X射线靶。