利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

36 条记录 (耗时 0.016 秒)

    Virtual long instruction word memory architecture for digital signal processor
    3.
    发明公开
    Virtual long instruction word memory architecture for digital signal processor 失效
    Virtuelle Langebefehlswortspeicherarchitekturfürdigitalen Signalprozessor。

    公开(公告)号：EP0473420A2

    公开(公告)日：1992-03-04

    申请号：EP91307890.3

    申请日：1991-08-28

    申请人： HITACHI, LTD.

    发明人： Haigh, Stephen G. ,  Baji, Toru

    IPC分类号： G06F9/38

    CPC分类号： G06F9/3889 ,  G06F9/3885

    摘要： An instruction memory apparatus for a data processing unit stores a sequence of instructions. At each instruction fetch cycle, two sequentially adjacent instructions are accessed. An instruction preprocessing unit, coupled to the internal instruction memory, combines the two sequentially adjacent instructions into a single long instruction word when the two instructions meet predefined criteria for being combined. The first of the two instructions is combined with a no-operation instruction to generate along instruction word when the predefined criteria are not met. In that case, the second instruction may be accessed again during the next instruction fetch cycle as the first of two adjacent instructions.

    摘要翻译： 用于数据处理单元的指令存储装置存储指令序列。 在每个指令获取周期，访问两个顺序相邻的指令。 当两个指令满足预定义的组合标准时，耦合到内部指令存储器的指令预处理单元将两个顺序相邻的指令组合成单个长指令字。 当不符合预定义的标准时，两个指令中的第一个与无操作指令组合以产生指令字。 在这种情况下，可以在下一指令获取周期期间再次访问第二指令作为两个相邻指令中的第一指令。

    Photosensor
    4.
    发明公开
    Photosensor 失效
    光传感器

    公开(公告)号：EP0075858A3

    公开(公告)日：1983-11-16

    申请号：EP82108778

    申请日：1982-09-22

    申请人： Nippon Telegraph and Telephone Public Corporation ,  Hitachi, Ltd.

    发明人： Yamamoto, Hideaki ,  Baji, Toru ,  Tsukada, Toshihisa ,  Sasano, Akira

    IPC分类号： H01L27/14 ,  H04N01/028

    CPC分类号： H01L27/14643 ,  H04N1/40056 ,  H04N5/361 ,  H04N5/3692

    摘要： A photosensor comprises a first conductive layer (8) formed on a given substrate (7), a one-dimensional array of a plurality of unit picture elements formed on the first conductive layer to extend in the longitudinal direction thereof, each unit picture element having a photodiode (Dp) and a blocking diode (D B ) connected in series with the photodiode in a relationship of reversed rectifying direction therewith, a second conductive layer (11) for connecting together, at one end, respective unit picture elements belonging to each of at least two unit picture element groups having each at least two of adjacent unit picture elements, and a third conductive layer (11') for connecting together, at the other end, corresponding with picture elements in the respective groups, the set of the photodiode and blocking diode in the respective groups being made of the same semiconductor material (10). Dispersion of outputs from the respective unit picture elements can be minimized.

    Color solid-state imager
    8.
    发明公开
    Color solid-state imager 失效
    FarbbildaufnahmevorrichtungfürFestkörper。

    公开(公告)号：EP0077003A2

    公开(公告)日：1983-04-20

    申请号：EP82109194.9

    申请日：1982-10-05

    申请人： Hitachi, Ltd.

    发明人： Koike, Norio ,  Tsukada, Toshihisa ,  Baji, Toru ,  Sasano, Akira

    IPC分类号： H01L27/14 ,  H04N9/30

    CPC分类号： H01L27/14843 ,  H01L27/14868 ,  H04N5/37213 ,  H04N5/3728

    摘要： The present invention consists in providing a CCD type color solid-state imager in which color signals respectively separated in time can be derived from picture elements for respective colors arrayed in the shape of a matrix and which permits Interlacing without degrading a resolution and without causing image lag.
    Concretely, pairs of CCD shifts registers (6-1, 6-2; 6-3, 6-4) which are electrically insulated and separated and which run in the vertical direction are arrayed in the horizontal direction, signal charges stored in adjacent picture elements are sent into the individual opposing CCD registers through transfer gates (13-1, 13-2, 13-3) arrayed in a checkerboard pattern, and signal charges transferred in time sequence are distributed to a plurality of CCD shift registers (8-1, 8-2, 8-3) which run in the horizontal direction, whereby a CCD type color solid-state imager having a high resolution and exhibiting no image lag is obtained.

    摘要翻译： 本发明的目的在于提供一种CCD型彩色固态成像器，其中分别在时间上分离的颜色信号可以从矩阵形状排列的各种颜色的图像元素导出，并且可以在不降低分辨率的情况下进行隔行扫描 落后。 具体地说，电绝缘和分离并沿垂直方向延伸的CCD对移位寄存器沿水平方向排列，存储在相邻像素中的信号电荷通过排列在棋盘图案中的传输门发送到各个相对的CCD寄存器 并且以时间顺序传送的信号电荷被分配到在水平方向上运行的多个CCD移位寄存器，由此获得具有高分辨率且不显示图像滞后的CCD型彩色固态成像器。

    Photoelectric device and method of producing the same
    9.
    发明公开
    Photoelectric device and method of producing the same 失效
    光电装置及其制造方法

    公开(公告)号：EP0023079A3

    公开(公告)日：1981-04-01

    申请号：EP80301904

    申请日：1980-06-06

    申请人： Hitachi, Ltd.

    发明人： Tsukada, Toshihisa ,  Takasaki, Yukio ,  Hirai, Tadaaki ,  Baji, Toru ,  Yamamoto, Hideaki ,  Tanaka, Yasuo ,  Maruyama, Eiichi ,  Ishioka, Sachio

    IPC分类号： H01L27/14

    CPC分类号： H01L27/14665

    摘要： A photoelectric device having at least a predetermined impurity region (26) which is disposed in a semiconductor substrate (20), and a photoelectric conversion portion which is constructed by stacking an electrode layer (31) lying in contact with at least a part of the impurity region, a photoconductive material layer (39) overlying the electrode layer, and a transparent electrode (37) overlying the photoconductive material layer, characterised in that the photoconductive material layer is made of an amorphous chalcogenide material which principally contains Se. It is very favourable that the photoelectric conversion material (39) contains a layer (34) principally containing Se which is partially doped with Te so as to enhance its sensitivity. In the course of forming or after having formed, at least one photoconductive layer (32) on a semiconductor body whose surface is uneven, a heat treatment is performed at a temperature of at least the softening point of the photoconductor so as to flatten the layer, whereby discontinuous parts of the photoconductor ascribable to the uneven surface of the semiconductor body can be avoided. This reduces the incidence of white flaws in the resulting picture.

    Method of producing a solid state photoelectric device
    10.
    发明公开
    Method of producing a solid state photoelectric device 失效
    一种生产光电固态器件的工艺。

    公开(公告)号：EP0023079A2

    公开(公告)日：1981-01-28

    申请号：EP80301904.1

    申请日：1980-06-06

    申请人： Hitachi, Ltd.

    发明人： Tsukada, Toshihisa ,  Takasaki, Yukio ,  Hirai, Tadaaki ,  Baji, Toru ,  Yamamoto, Hideaki ,  Tanaka, Yasuo ,  Maruyama, Eiichi ,  Ishioka, Sachio

    IPC分类号： H01L27/14

    CPC分类号： H01L27/14665

    摘要： A photoelectric device having at least a predetermined impurity region (26) which is disposed in a semiconductor substrate (20), and a photoelectric conversion portion which is constructed by stacking an electrode layer (31) lying in contact with at least a part of the impurity region, a photoconductive material layer (39) overlying the electrode layer, and a transparent electrode (37) overlying the photoconductive material layer, characterised in that the photoconductive material layer is made of an amorphous chalcogenide material which principally contains Se. It is very favourable that the photoelectric conversion material (39) contains a layer (34) principally containing Se which is partially doped with Te so as to enhance its sensitivity. In the course of forming or after having formed, at least one photoconductive layer (32) on a semiconductor body whose surface is uneven, a heat treatment is performed at a temperature of at least the softening point of the photoconductor so as to flatten the layer, whereby discontinuous parts of the photoconductor ascribable to the uneven surface of the semiconductor body can be avoided. This reduces the incidence of white flaws in the resulting picture.