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公开(公告)号：EP0077004B1
公开(公告)日：1990-02-07
申请号：EP82109195.6
申请日：1982-10-05
申请人： Hitachi, Ltd.
CPC分类号： H01L29/861 , H01L29/0688
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公开(公告)号：EP0065269A2
公开(公告)日：1982-11-24
申请号：EP82104128.2
申请日：1982-05-12
申请人： Hitachi, Ltd.
发明人： Sasayama, Takao , Kato, Kazuo , Naito, Masayoshi
CPC分类号： H01L27/0716 , H01L27/088 , H03K17/567
摘要： A switching device and circuit comprises a bi-polar transistor (3, 3') and at least two field effect transistors (1, 2, 24, 30) for controlling the bi-polar transistor. A first field effect transistor (1, 30) has its drain and source connected across the collector-base of the bi-polar transistor and a second field effect transistor (2, 24) has its drain and source connected across the base-emitter of the bi-polar transistor. Gates of the first and second field effect transistors are connected in common and applied with a voltage signal. The first field effect transistor (1, 30) is of an enhancement type and the second field effect transistor (2, 24) is of a depletion type.
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公开(公告)号：EP0103138A2
公开(公告)日：1984-03-21
申请号：EP83107656.7
申请日：1983-08-03
申请人： HITACHI, LTD.
IPC分类号： H01L29/91
CPC分类号： H01L29/861 , H01L29/0688 , H01L29/36
摘要： in accordance with the present invention, there is provided a semiconductor rectifier diode which has low loss, quick response and soft reverse recovery properties and is composed of three consecutive layers, i.e., a p-type emitter layer (3), an n-type base layer (4) and an n-type emitter layer (5), the p-type emitter layer being composed of a first portion (31) and second portions (32) which surround said first portion, have a higher impurity concentration as compared with said first portion, and extend beyond said first portion toward said n-type base layer, and said base layer being composed of a first layer portion (41) which is adjacent to said n-type emitter layer and a second layer portion (42) which is located near a p-n junction (J,) side and has a lower impurity concentration as compared with said first layer portion.
摘要翻译： 根据本发明，提供了一种具有低损耗，快速响应和软反向恢复性能的半导体整流二极管，由三层连续构成，即 例如，p型发射极层（3），n型基极层（4）和n型发射极层（5），p型发射极层由第一部分（31）和第二部分 围绕所述第一部分的部分（32）与所述第一部分相比具有更高的杂质浓度，并且延伸超过所述第一部分朝向所述n型基底层，并且所述基底层由第一层部分（41）组成， 其与所述n型发射极层相邻，第二层部分（42）位于pn结（J1）附近，并且与所述第一层部分相比具有较低的杂质浓度。
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公开(公告)号：EP0309988A1
公开(公告)日：1989-04-05
申请号：EP88115882.8
申请日：1988-09-27
申请人： HITACHI, LTD.
发明人： Onose, Hidekatsu , Ohue, Michio , Naito, Masayoshi
CPC分类号： G02F1/218 , B82Y20/00 , G02F1/017 , G02F2001/0152 , G02F2001/0156
摘要： A semiconductor optical modulator is provided wherein very thin films of two kinds of semiconductors having different band gaps are laminated alternately to form a multi-quantum well (MQW) structure (14; 31), also called a super-lattice structure, and current is injected into the MQW structure to change optical absorption and refractive index thereof so that a sufficient on/off ratio can be obtained.
摘要翻译： 提供了一种半导体光调制器，其中具有不同带隙的两种半导体的非常薄的薄膜被交替层叠以形成也称为超晶格结构的多量子阱（14; 31），并且电流是 注入MQW结构以改变其光吸收和折射率，从而可以获得足够的开/关比。
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公开(公告)号：EP0103138B1
公开(公告)日：1987-11-19
申请号：EP83107656.7
申请日：1983-08-03
申请人： HITACHI, LTD.
IPC分类号： H01L29/91
CPC分类号： H01L29/861 , H01L29/0688 , H01L29/36
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公开(公告)号：EP0065269B1
公开(公告)日：1986-08-27
申请号：EP82104128.2
申请日：1982-05-12
申请人： Hitachi, Ltd.
发明人： Sasayama, Takao , Kato, Kazuo , Naito, Masayoshi
CPC分类号： H01L27/0716 , H01L27/088 , H03K17/567
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公开(公告)号：EP0077004A3
公开(公告)日：1985-09-18
申请号：EP82109195
申请日：1982-10-05
申请人： Hitachi, Ltd.
CPC分类号： H01L29/861 , H01L29/0688
摘要： Herein disclosed is a semiconductor rectifier diode of low loss and high speed type having a p + -n-n + structure, in which the p +- type layer (3) is constructed of a first layer portion (31) and a second layer portion (32) surrounded by the first layer portion (31) and having a lower impurity concentration and a smaller thickness than the first layer portion (31).
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公开(公告)号：EP0103138A3
公开(公告)日：1985-09-11
申请号：EP83107656
申请日：1983-08-03
申请人： HITACHI, LTD.
IPC分类号： H01L29/91
CPC分类号： H01L29/861 , H01L29/0688 , H01L29/36
摘要： in accordance with the present invention, there is provided a semiconductor rectifier diode which has low loss, quick response and soft reverse recovery properties and is composed of three consecutive layers, i.e., a p-type emitter layer (3), an n-type base layer (4) and an n-type emitter layer (5), the p-type emitter layer being composed of a first portion (31) and second portions (32) which surround said first portion, have a higher impurity concentration as compared with said first portion, and extend beyond said first portion toward said n-type base layer, and said base layer being composed of a first layer portion (41) which is adjacent to said n-type emitter layer and a second layer portion (42) which is located near a p-n junction (J,) side and has a lower impurity concentration as compared with said first layer portion.
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公开(公告)号：EP0077004A2
公开(公告)日：1983-04-20
申请号：EP82109195.6
申请日：1982-10-05
申请人： Hitachi, Ltd.
CPC分类号： H01L29/861 , H01L29/0688
摘要： Herein disclosed is a semiconductor rectifier diode of low loss and high speed type having a p + -n-n + structure, in which the p +- type layer (3) is constructed of a first layer portion (31) and a second layer portion (32) surrounded by the first layer portion (31) and having a lower impurity concentration and a smaller thickness than the first layer portion (31).
摘要翻译： 这里公开了具有ap + - nn +结构的低损耗和高速型的半导体整流二极管，其中p +型层（3）由第一层部分（31）和 由第一层部分（31）围绕并且具有比第一层部分（31）更低的杂质浓度和更小的厚度的第二层部分（32）。
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