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7 条记录 (耗时 0.013 秒)

    Pressure transducer with temperature compensation circuit
    1.
    发明公开
    Pressure transducer with temperature compensation circuit 失效
    压力换能器具有温度补偿电路。

    公开(公告)号：EP0106050A1

    公开(公告)日：1984-04-25

    申请号：EP83107850.6

    申请日：1983-08-09

    申请人： HITACHI, LTD.

    发明人： Yamada, Kazuji ,  Sato, Hideo ,  Kato, Kazuo ,  Sasayama, Takao ,  Kawakami, Kanji ,  Kanzawa, Ryosaku

    IPC分类号： G01L9/00 ,  G01L9/06

    CPC分类号： G01L9/0054 ,  G01L9/065 ,  Y10S323/907

    摘要： @ A pressure transducer is disclosed comprising a pressure sensor portion having gage resistors (2, 3, 4, 5) in bridge formed on a thin diaphragm (54) of a semiconductor substrate (50), and a power supply connected to the pressure sensor portion for driving the pressure sensor. The power supply includes a first current source (Q 1 , Q 2 , R 3 , R 4 , 19) for supplying a temperature-dependent current equivalent to the sum of a current almost proportional to the absolute temperature and a current independent of temperature, and a second current source (20, R s , R e , Q 3 ) for sinking the current almost proportional to the temperature characteristic of the gage resistors from the current of the first current source. A temperature compensation circuit is additionally provided to drive the bridge circuit by the difference between the temperature-dependent current and the current proportional to the temperature characteristic when in constant- current driving mode, and by a voltage proportional to the current difference when in constant-voltage driving mode.

    Semiconductor absolute pressure transducer assembly
    7.
    发明公开
    Semiconductor absolute pressure transducer assembly 失效
    半导体绝对压力传感器组件。

    公开(公告)号：EP0010204A1

    公开(公告)日：1980-04-30

    申请号：EP79103666.8

    申请日：1979-09-27

    申请人： Hitachi, Ltd.

    发明人： Yamada, Kazuji ,  Suzuki, Seiko ,  Nishihara, Motohisa ,  Kawakami, Kanji ,  Sato, Hideo ,  Kobori, Shigeyuki ,  Kanzawa, Ryosaku ,  Takahashi, Minoru ,  Minorikawa, Hitoshi

    IPC分类号： G01L9/06 ,  H01L29/84

    CPC分类号： G01L9/0042 ,  G01L9/0054

    摘要： A semiconductor pressure transducer assembly comprising a silicon diaphragm assembly (20) and a glass covering member (10). The assembly (20) has a circular diaphragm portion (30) of thin silicon which is formed using etching, and a thick supporting portion (33) therearound. Piezoresistive elements (22, 24) of a piezoresistive bridge circuit and conducting paths (27) for electrically connection thereof are formed on the assembly (20). On a surface of the assembly (20), a passivating layer (31) of silicon dioxide is formed in uniform thickness, and further on a surface of the passivating layer (31) is formed a layer (34) of polysilicon on the supporting portion (33) of the assembly (20) using Ion Implantation method, or reforming a silicon dioxide layer (31) thereon. In the passivating layer (31), a contacting window (32) is formed, through which the polysilicon layer (34) is electrically connected to the silicon diaphragm assembly (20). The covering member (10) of borosilicate glass having a circular well (11) is mounted and Anodic-bonded onto the silicon diaphragm assembly (20) in contact with the'polysilicon layer (34).