利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

51 条记录 (耗时 0.009 秒)

    Magnetic memory device capable of memorizing information in a stripe domain in the form of a vertical Bloch line pair
    1.
    发明公开
    Magnetic memory device capable of memorizing information in a stripe domain in the form of a vertical Bloch line pair 失效
    在垂直血液线对形式的条带中记录信息的磁记忆装置

    公开(公告)号：EP0106358A3

    公开(公告)日：1986-09-10

    申请号：EP83110378

    申请日：1983-10-18

    申请人： NEC CORPORATION

    发明人： Konishi, Susumu ,  Hidaka, Yasuharu

    IPC分类号： G11C19/08

    CPC分类号： G11C19/0841 ,  G11C19/0858 ,  G11C19/0866

    摘要： 57 In a magnetic memory device comprising a magnetic medium (21) having an easy axis of magnetization orthogonal to a principal surface of the medium, the medium has at least one stripe domain (20) surrounded by a domain wall which memorizes information in the form of a pair of vertical Bloch lines. Each pair is written in one end of the domain by supply of a local magnetic field to the one end when no magnetic bubble exists in the proximity of the one end. Each information is specified by absence or presence of each pair and successively transferred along the domain wall by a pulsed bias magnetic field. Readout operation is carried out at a preselected end of the stripe domain by supply of another local magnetic field to the preselected end to selectively chop the preselected end into a magnetic bubble only when each pair exists in the preselected end. Thus, presence and absence of each pair is converted into presence and absence of the bubble.

    Thermomagnetic recording methods
    2.
    发明公开
    Thermomagnetic recording methods 失效
    热电记录方法

    公开(公告)号：EP0104919A3

    公开(公告)日：1986-08-13

    申请号：EP83305715

    申请日：1983-09-26

    申请人： SONY CORPORATION

    发明人： Kaneko, Masahiro ,  Tamada, Hitoshi ,  Okamoto, Tsutomu ,  Yamada, Toshiro

    IPC分类号： G11C19/08

    CPC分类号： G11C19/0858 ,  G11C13/06

    摘要： A thermomagnetic recording method makes use of a layer of soft magnetic material having an easy axis of magnetisation normal to the layer, the material being of a type in which magnetic bubble domains can be generated. A bias magnetic field is applied to the layer, the strength of the magnetic field being between the run-out field and the collapse field of the layer, and an optical beam is applied to the layer so as to form a bubble domain having a direction of magnetisation that is opposite to that of the bias field, the layer of soft magnetic material having selected value of ΔM s , Δσ w /σ w , f, h, He and M, to satisfy the relationship AT AT where He is the coercive force of the layer, M, is the saturation magnetisation of the layer, h is a thickness of the layer, σ w is the domain wall energy, d is the diameter of the generated domain, and each of C M and C o is a constant determined by h, d and f, where

    A major/minor loop bubble memory system
    3.
    发明公开
    A major/minor loop bubble memory system 失效
    主要/次要循环储存系统

    公开(公告)号：EP0068129A3

    公开(公告)日：1986-05-07

    申请号：EP82104235

    申请日：1982-05-14

    申请人： International Business Machines Corporation

    发明人： Collins, Thomas William ,  Hurley, Michael Garwood

    IPC分类号： G11C19/08

    CPC分类号： G11C19/0858 ,  G11C19/0866

    摘要： A major/minor loop bubble memory system includes a passive replicator (34) in the major loop read channel (33) which is connected by a first path (42) to a mode switch- annihilator (44) and a merge point in the major loop write channel (30) and by a second path (36) to an off-chip decision-making means (38) and the merge point in the write channel. The decision-making means (38) is positioned the same or fewer propagation steps than the mode switch-annihilator (44) is from the replicator (34). The decision-making means (38) is activated to cause either the replicated data to pass through the mode switch-annihilator (44) into the write channel or the replicated data to be annihilated in the mode switch-annihilator and the data from a generator (40) to pass into the write channel.

    Guard rail for contiguous element bubble chips
    5.
    发明公开
    Guard rail for contiguous element bubble chips 失效
    定纸导轨用于由气泡的芯片相邻的元件。

    公开(公告)号：EP0031890A1

    公开(公告)日：1981-07-15

    申请号：EP80107148.1

    申请日：1980-11-18

    申请人： International Business Machines Corporation

    发明人： Keefe, George Edward ,  Pugh, Emerson William

    IPC分类号： G11C19/08

    CPC分类号： G11C19/0858

    摘要： Guard rails are described for particular use with magnetic bubble domain chips using contiguous propagation elements. These guard rails generally surround the active device area (storage area 12) of the chip (10) and are used to move stray bubble domains from the storage area to the edge of the chip, orto a collapser, and also to prevent stray bubbles from entering the active device area. These guard rail structures are comprised of contiguous propagation elements characterized by an undulating edge (28) and a smooth edge (30), both of which generally move bubble domains away from the active device area in response to the reorientation of the magnetic drive field (Hxy). In one embodiment, the guard rail is a spiral structure (14) surrounding the active device area, having one end in the interior of the magnetic bubble chip (10) adjacent to the active device area (12), and another end near the edge of the chip, or near a bubble annihilator, etc. In another embodiment, the guard rail is comprised of a plurality of structures (26) generally defining a broken-spiral which surround the active device area (12). One end of each of these structures is located near the active device area, while the other end is disposed toward the edge of the magnetic bubble chip. In the case of ion implanted contiguous propagation elements, the mask used to define the regions of ion implantation can be used as control conductors (32-40) for the devices in the active device region. For example, this mask can be used as a transfer conductor (34,36) to move bubble domains into and out of a storage area, and can also be used as a nucleate conductor (32), and as a stretcher-sensor conductor (38,40) for detection of bubbles.

    Defect tolerant scheme for a bubble lattice file
    6.
    发明公开
    Defect tolerant scheme for a bubble lattice file 失效
    破裂方案适用于泡沫文件

    公开(公告)号：EP0006560A3

    公开(公告)日：1980-01-23

    申请号：EP79101987

    申请日：1979-06-18

    申请人： BURROUGHS CORPORATION (a Michigan corporation)

    发明人： Zwingman, Robert Leo

    IPC分类号： G11C19/08 ,  G06F11/20

    CPC分类号： G11C29/86 ,  G11C19/0833 ,  G11C19/0858

    摘要： A defect tolerant lattice file memory having means in the access column for annihilating lattice bubbles in a previously detected defective row thus eliminating an error in the digital information to be extracted from the lattice file. This annihilation means comprises a ladder formed in a conductor overlay located over the access column in which partial current loops may be formed by disconnecting certain selected portions of the ladder. These current loops create a localized magnetic field when the ladder conductor is activated thus annihilating the selected row of bubbles. Thus lattice file chips found to have defective rows which will not support and maintain lattice bubbles in theirs desired coded state can now be utilized.

    摘要翻译： 一种缺陷容许格子文件存储器，其具有在访问列中的用于消除先前检测到的缺陷行中的格子气泡的装置，从而消除了要从格子文件中提取的数字信息中的错误。 该湮灭装置包括形成在位于接近柱上方的导体覆盖层中的梯子，其中可以通过断开梯子的某些选定部分来形成部分电流环路。 当梯形导体被激活时，这些电流环路产生局部磁场，从而消除所选择的气泡排。 因此，现在可以利用发现具有不支持和维持格子气泡处于其所需编码状态的缺陷行的晶格文件芯片。

    Duplicateur dans une mémoire à bulles à motifs non implantés, et mémoire comportant au moins un desdits duplicateurs
    10.
    发明公开
    Duplicateur dans une mémoire à bulles à motifs non implantés, et mémoire comportant au moins un desdits duplicateurs 失效
    复制与非注入模式，以及存储器含有气泡存储器的至少一个这样的复印机。

    公开(公告)号：EP0172757A1

    公开(公告)日：1986-02-26

    申请号：EP85400638.4

    申请日：1985-04-01

    申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE

    发明人： Fedeli, Jean-Marc ,  Magnin, Joel

    IPC分类号： G11C19/08

    CPC分类号： G11C19/0858

    摘要： Duplicateur dans une mémoire à bulles magnétiques à motifs non-implantés, procédé pour la mise en oeuvre dudit duplicateur et mémoire à bulles magnétiques de type série-parallèle comportant au moins un desdits duplicateurs.
    Dans une mémoire à bulles magnétiques comportant un premier ensemble (2) de motifs non-implantés alignés et un second ensemble (4) de motifs non-implantés alignés, le duplicateur de l'invention se caractérise en ce qu'il comprend un conducteur d'extension (6) et un conducteur de coupure (8), le conducteur d'extension reliant lesdits ensembles de motifs, le conducteur de coupure étant disposé transversalement audit conducteur d'extension, la géométrie du motif d'extrémité (16) du premier ensemble de motifs étant telle que la position de duplication est une position stable du premier ensemble de motifs et que la position de réception de la bulle dupliquée est une position stable du second ensemble de motifs.