摘要:
A method for controlling a first storage control apparatus (10) coupled to a host computer (30) and a second storage control apparatus (20) comprises transmitting a request of information concerning a logical volume of said second storage control apparatus (20) to said second storage control apparatus (20); receiving a response from said second storage control apparatus (20), storing second information (214) of said logical volume of said second storage control apparatus (20) according to said received response, said stored second information being related to first information (212) of a logical volume of said first storage control apparatus (10); receiving a first data input/output request from said host (30); and if said request is to be handled by said second storage control apparatus (20), transmitting a second data input/output request corresponding to said first data input/output request, to said second storage control apparatus (20).
摘要:
A heterogeneous computer system, a heterogeneous input/output system and a data back-up method for the systems. An I/O subsystem A (113, 114) for open system and an I/O subsystem B (104, 105) for a mainframe are connected by a communication unit. In order to back up the data from at least a disk connected to the I/O subsystem B in a MT library system and in order to permit the mainframe to access the data in the I/O subsystem B, the I/O subsystem A includes a table (314, 315) for assigning a vacant memory address in a local subsystem to the memory of the I/O subsystem for an open system. A request of variable-length record format received from the mainframe is converted into a fixed-length record format for the subsystem B. The disk designated according to the table is accessed, and the data thus obtained is sent to the mainframe and backed up in the back-up system.
摘要:
In a computer system including a disk subsystem (80) having channel interface (71) compatible to a count-key-data format and a SCSI interface (61) compatible to a fixed length data format, the disk subsystem (80) is connected to a CPU (10) controlled by an open system operating system (40) through the SCSI interface (61), and connected to an other CPU (11) controlled by a main frame operating system (50) through the channel interface (71). The CPU (10) is provided with a CKD record access library (35) and a VSAM access library (30) which accesses in a FBA format the VSAM record stored by the other CPU (11) in a CKD format in the disk subsystem (80) and allows the access by an application program (20) of the CPU (10) as a VSAM record based on VSAM control information.
摘要:
@ A thin film transistor has a layer (15) formed by the interfacial reaction between amorphous silicon and metal, which is used as a central or base electrode (15,11). The base electrode (15, 11) is in the shape of stripes or a flat surface. The base electrode (15, 11) is sandwiched between the emitter (4, 5, 14, 10) and collector (4, 5, 6, 12) of the transistor, which may each consist of an n-type hydrogenated amorphous silicon layer (5) and an intrinsic hydrogenated amorphous silicon layer (4), with the intrinsic hydrogenated amorphous silicon layer (4) being close to the base electrode (15, 11). There may be p-type hydrogenated amorphous silicon layers between the base electrode (15, 11) and the intrinsic hydrogenated amorphous silicon layer.
摘要:
A storage system (10) comprises a first disk controller (104) coupled to a host computer (101) and at least one first disk (105) coupled to said first disk controller (104). The storage system (10) is coupled to another storage system (20), which comprises a second disk controller (113) and at least one second disk (114). The first disk controller (104) receives a write request issued from said host computer (101), selects a storage system including a target disk corresponding to first disk identification information included in said write request, obtains, if the selected storage system is said another storage system (20), identification information designating said another storage system (20) and second disk identification information designating one of said at least one second disk based on said first disk identification information, and sends a write request to said another storage system (20) according to said identification information designating said another storage system (20) and said second disk identification information.
摘要:
A storage system (80) is connected with a first computer (11) and a second computer (10) and comprises a first interface (71) for receiving first data in a count-key-data format from the first computer (11), a storage device (100) for storing the first data, and a second interface (61) compatible with a fixed length data format, for receiving a request for reading the first data from the second computer (10) and outputting data stored in a track storing the first data to the second computer (10). The request includes information sent from the first computer (11) to the second computer (10) and indicating the position in the storage device (100) where the first data is stored.
摘要:
A semiconductor device such as a solar cell, photodiode and solid state imaging device comprises a semiconductor layer (13,14,15; 20, 21, 22; 37; 37'; 65) made of amorphous silicon formed on a given substrate (11, 18, 28, 60), and a transparent conductive layer (16, 25, 36, 51, 66) formed by an interfacial reaction between the amorphous silicon and a metallic film directly formed on the amorphous silicon. This transparent conductive layer is used as a transparent electrode of the device and if necessary the remainder (17, 24,35,42, 67) after having partially removed the metallic film for the transparent conductive layer is used as a conductive layer and right shielding film.
摘要:
A semiconductor device such as a solar cell, photodiode and solid state imaging device comprises a semiconductor layer (13,14,15; 20, 21, 22; 37; 37'; 65) made of amorphous silicon formed on a given substrate (11, 18, 28, 60), and a transparent conductive layer (16, 25, 36, 51, 66) formed by an interfacial reaction between the amorphous silicon and a metallic film directly formed on the amorphous silicon. This transparent conductive layer is used as a transparent electrode of the device and if necessary the remainder (17, 24,35,42, 67) after having partially removed the metallic film for the transparent conductive layer is used as a conductive layer and right shielding film.