公开(公告)号：EP0450306A1

公开(公告)日：1991-10-09

申请号：EP91102925.4

申请日：1991-02-27

申请人： HITACHI, LTD. ,  HITACHI HARAMACHI SEMI-CONDUCTOR LTD.

发明人： Mori, Mutsuhiro ,  Yasuda, Yasumiti ,  Sakurai, Naoki ,  Arakawa, Hidetoshi ,  Owada, Hiroshi

IPC分类号： H01L29/872

CPC分类号： H02M7/487 ,  H01L24/03 ,  H01L24/05 ,  H01L24/48 ,  H01L25/072 ,  H01L29/7806 ,  H01L29/872 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05558 ,  H01L2224/05624 ,  H01L2224/4847 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01074 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14 ,  H03K17/08148 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2224/85399

摘要： In a semiconductor device a first diode having a pn junction and a second diode having a combination of a Schottky barrier and a pn junction in a current-passing direction are provided side by side in a direction perpendicular to the current-passing direction. When a forward current with a current density J F is passed into the second diodes, the relation
is established in a forward voltage V F range of 0.1 (V) to 0.3 (V). The first diode is constituted by first and second semiconductor regions (13, 15) forming a pn junction therebetween, the second being in ohmic contact with one main electrode (3), and having an impurity concentration higher than that of the first semiconductor region (13). The second diode is constituted by first and third semiconductor regions (13, 16) forming a pn junction therebetween, the third being in contact through a Schottky barrier with the one main electrode (3) and having an impurity concentration higher than the first semiconductor region (13).

摘要翻译： 在半导体器件中，沿与电流通过方向垂直的方向并排地设置具有pn结的第一二极管和具有通流方向的肖特基势垒和pn结的组合的第二二极管。 当具有电流密度JF的正向电流被传送到第二二极管时，在0.1（V）至0.3（V）的正向电压VF范围内建立关系$。\; 第一二极管由在其间形成pn结的第一和第二半导体区域（13,15）构成，第二二极管与一个主电极（3）欧姆接触，并且具有高于第一半导体区域的杂质浓度\; 13）。\; 第二二极管由在其间形成pn结的第一和第三半导体区域（13,16）构成，第三二极管通过肖特基势垒与一个主电极（3）接触并具有比第一半导体区域高的杂质浓度\; （13）。\mathop{\mathrm{image}}$

公开(公告)号：EP0450306B1

公开(公告)日：1996-07-24

申请号：EP91102925.4

申请日：1991-02-27

申请人： HITACHI, LTD. ,  HITACHI HARAMACHI SEMI-CONDUCTOR LTD.

发明人： Mori, Mutsuhiro ,  Yasuda, Yasumiti ,  Sakurai, Naoki ,  Arakawa, Hidetoshi ,  Owada, Hiroshi

IPC分类号： H01L29/872

CPC分类号： H02M7/487 ,  H01L24/03 ,  H01L24/05 ,  H01L24/48 ,  H01L25/072 ,  H01L29/7806 ,  H01L29/872 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05558 ,  H01L2224/05624 ,  H01L2224/4847 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01074 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14 ,  H03K17/08148 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2224/85399