公开(公告)号：EP3503227A2

公开(公告)日：2019-06-26

申请号：EP18208056.4

申请日：2018-11-23

申请人： Panasonic Intellectual Property Management Co., Ltd.

发明人： KITAURA, Hidetoshi ,  FURUSAWA, Akio ,  HINE, Kiyohiro

IPC分类号： H01L33/64 ,  H01L23/373 ,  H01L21/58 ,  B23K35/26

CPC分类号： H01L33/641 ,  B23K35/262 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/83 ,  H01L33/005 ,  H01L33/644 ,  H01L2224/04026 ,  H01L2224/05073 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/27849 ,  H01L2224/29111 ,  H01L2224/32225 ,  H01L2224/48229 ,  H01L2224/73265 ,  H01L2224/83048 ,  H01L2224/83097 ,  H01L2224/83192 ,  H01L2224/83399 ,  H01L2224/83493 ,  H01L2224/83815 ,  H01L2924/12041 ,  H01L2924/15763 ,  H01L2933/0075 ,  H01L2924/01006 ,  H01L2924/01022 ,  H01L2924/0104 ,  H01L2924/01023 ,  H01L2924/00014 ,  H01L2224/05155

摘要： A joining material (101) includes: at least one type of element at 0.1 wt% to 30 wt%, the element being capable of forming a compound with each of tin and carbon; and tin at 70 wt% to 99.9 wt% as a main component. The at least one type of element comprises at least one selected from the group consisting of titanium, zirconium and vanadium. The joining material (101) is used for fabrication of a semiconductor device, wherein the joining material (101) is joined to a carbon base (102) upon heating up to 1200°C with formation of a compound (103) of carbon, tin and the element being capable of forming a compound with each of tin and carbon at the interface between the joining material (101) and the carbon base (102), and then a light emitting element (106) is joined to the jointing material (101) upon heating up to 350°C. The joining material preferably comprises the element capable of forming a compound with each of tin and carbon at 0.1 wt% to 10 wt%, more preferably at 5 wt% to 10 wt%.

公开(公告)号：EP3320075A1

公开(公告)日：2018-05-16

申请号：EP16833876.2

申请日：2016-08-04

申请人： Versum Materials US, LLC

发明人： CHANG, Randy, Li-Kai ,  PARRIS, Gene, Everad ,  CHEN, Hsiu, Mei ,  LEE, Yi-chia ,  LIU, Wen, Dar ,  CHEN, Tianniu ,  MATZ, Laura, M. ,  LO, Ryback, Li Chang ,  MENG, Ling-Jen

IPC分类号： C11D11/00 ,  C11D3/39 ,  C11D3/34 ,  C11D3/00

CPC分类号： C11D11/0047 ,  C11D3/0073 ,  C11D7/265 ,  C11D7/3209 ,  C11D7/34 ,  C11D7/5009 ,  C11D7/5013 ,  C11D7/5022 ,  G03F7/425 ,  G03F7/426 ,  H01L21/31133 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/94 ,  H01L2224/02311 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/0401 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05171 ,  H01L2224/05614 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05672 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/1148 ,  H01L2224/1181 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13124 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/81191 ,  H01L2224/94 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01028 ,  H01L2924/014 ,  H01L2224/11 ,  H01L2924/01047

摘要： It is disclosed a photoresist cleaning composition for stripping a photoresist pattern having a film thickness of 3-150 μm, which contains (a) quaternary ammonium hydroxide (b) a mixture of water-soluble organic solvents (c) at least one corrosion inhibitor and (d) water, and a method for treating a substrate therewith.

公开(公告)号：EP3111467A2

公开(公告)日：2017-01-04

申请号：EP15706806.5

申请日：2015-02-26

申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives

发明人： GONDCHARTON, Paul ,  BENAISSA, Lamine ,  IMBERT, Bruno ,  MORICEAU, Hubert

IPC分类号： H01L21/60 ,  H01L21/768 ,  H01L21/98 ,  H01L23/485

CPC分类号： H01L24/83 ,  H01L21/185 ,  H01L24/03 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/80 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0381 ,  H01L2224/03845 ,  H01L2224/05073 ,  H01L2224/0508 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05186 ,  H01L2224/05571 ,  H01L2224/05647 ,  H01L2224/2745 ,  H01L2224/2755 ,  H01L2224/27845 ,  H01L2224/29147 ,  H01L2224/80055 ,  H01L2224/80357 ,  H01L2224/8083 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/8092 ,  H01L2224/80948 ,  H01L2224/83895 ,  H01L2225/06524 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01008 ,  H01L2924/01015 ,  H01L2924/01016 ,  H01L2924/01017 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/00014 ,  H01L2924/049 ,  H01L2924/00012

摘要： Process for producing a structure by direct adhesive bonding of two elements comprising the production of the elements to be assembled and the assembly of said elements, in which the production of the elements to be assembled comprises the steps: - deposition on a substrate of a TiN layer by physical vapour deposition, - deposition of a copper layer on the TiN layer, and in which the assembly of said elements comprises the steps: - polishing the surfaces of the copper layers intended to come into contact so that they have a roughness of less than 1 nm RMS and hydrophilic properties, - bringing said surfaces into contact, - storing said structure at atmospheric pressure and at ambient temperature.

摘要翻译： 待组装和元件的组装生产的元件的：一种用于通过两个元件，所述方法包括直接键合制造结构的方法。 生产的元件的组装，包括：在TiN层上的铜层的通过物理气相沉积TiN层，和沉积的底物沉积。 的元件的组件包括：抛光预期会接触，从而thatthey具有小于1个纳米RMS和亲水性能的粗糙度铜层的表面，使表面接触，并在大气压下和在存放结构 环境温度。

公开(公告)号：EP2858107A2

公开(公告)日：2015-04-08

申请号：EP14176759.0

申请日：2014-07-11

申请人： Kabushiki Kaisha Toshiba

发明人： Matsushita, Keiichi ,  Sasaki, Yo

IPC分类号： H01L23/373 ,  H01L21/58

CPC分类号： H01L23/3736 ,  H01L21/50 ,  H01L23/10 ,  H01L23/142 ,  H01L23/4827 ,  H01L24/03 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/83 ,  H01L2224/0346 ,  H01L2224/04026 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05144 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05647 ,  H01L2224/2741 ,  H01L2224/2743 ,  H01L2224/29082 ,  H01L2224/29083 ,  H01L2224/29084 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/29164 ,  H01L2224/29166 ,  H01L2224/29169 ,  H01L2224/32245 ,  H01L2224/32501 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/83192 ,  H01L2224/83193 ,  H01L2224/83203 ,  H01L2224/83359 ,  H01L2224/83379 ,  H01L2224/83447 ,  H01L2224/83825 ,  H01L2224/85444 ,  H01L2924/00014 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10272 ,  H01L2924/10329 ,  H01L2924/1033 ,  H01L2924/13064 ,  H01L2924/13091 ,  H01L2924/161 ,  H01L2924/16195 ,  H01L2924/163 ,  H01L2924/171 ,  H01L2924/2064 ,  H01L2224/05644 ,  H01L2924/00012 ,  H01L2224/06164 ,  H01L2224/45099

摘要： According to one embodiment, a semiconductor device (110) includes a semiconductor element (20), a mounting member (70) including Cu, and a bonding layer (50) provided between the semiconductor element (20) and the mounting member (70). The bonding layer (50) includes a first region (R1) including Ti and Cu, and a second region (R2) provided between the first region (R1) and the mounting member (70), and including Sn and Cu. A first position (P1) along the first direction is positioned between the semiconductor element (20) and a second position (P2) along the first direction. The first position (P1) is where the composition ratio (51r) of Ti in the first region (R1) is 0.1 times a maximum value (51x) of the composition ratio (51r) of Ti. The second position (P2) is where the composition ratio (52r) of Sn in the second region (R2) is 0.1 times a maximum value (52x) of the composition ratio (52r) of Sn. A distance (L1) between the first position (P1) and the second position (P2) is not less than 0.1 micrometres.
According to another embodiment, a semiconductor device (120) includes a semiconductor element (20), a mounting member (70) including Cu, a first layer (41) provided between the semiconductor element (20) and the mounting member (70), the first layer (41) including Ti, a second layer (42) provided between the first layer (41) and the mounting member (70), the second layer (42) including Sn and Cu and a third layer (43) provided between the first layer (41) and the second layer (42), the third layer (43) including at least one selected from Ni, Pt, and Pd.
In both embodiments, the semiconductor device (110, 120) is formed by bonding the semiconductor element (20) to the mounting member (70) by solid solution bonding.
Thereby, a semiconductor device (110, 120) having good heat dissipation and high productivity can be provided.

摘要翻译： 。根据一个实施例，一种半导体器件（110）包括半导体元件（20）和所述安装部件之间提供了一种半导体元件（20），包含Cu的安装构件（70），以及结合层（50）（70） ， 该粘结层（50）包括第一区域（R1）包括TI和Cu，并且所述第一区域（R1）和所述安装构件（70）和含有Sn和Cu之间的第二区域（R2）。 沿第一方向的第一位置（P1）设置在半导体元件（20）和沿着所述第一方向的第二位置（P2）之间的位置。 第一位置（P1）是其中，Ti在第一区域（R1）的组成比（51R）为Ti的组成比（51R）的0.1倍的最大值（51X），第二位置（P2）是其中 在第二区域（R2）Sn的组成比（52R）为Sn的组成比（52R）的0.1倍的最大值（52X）。 第一位置（P1）和第二位置（P2）之间的距离（L1）为不小于0.1微米。 。根据另一个实施例，一种半导体器件（120）包括一个半导体元件（20），一个安装构件（70）包含Cu，半导体元件（20）和所述安装构件（70）之间提供的第一层（41）， 所述第一层（41）包含的Ti，之间设置含有Sn和Cu和第三层（43），所述第一层（41）和所述安装构件（70），第二层（42）之间的第二层（42） 所述第一层（41）和第二层（42），第三层（43）包括至少一个选自Ni，Pt和Pd中选择。 在两个实施例中，半导体器件（110,120）由所述半导体元件（20），以通过固溶接合所述安装构件（70）接合而形成。 由此，可以提供具有良好的散热和高生产率的半导体装置（110，120）。

公开(公告)号：EP2779232A3

公开(公告)日：2014-12-03

申请号：EP14160005.6

申请日：2014-03-14

申请人： Renesas Electronics Corporation

发明人： Kajiwara, Ryoichi ,  Nakajo, Takuya ,  Arai, Katsuo ,  Yato, Yuichi ,  Oka, Hiroi ,  Hozoji, Hiroshi

IPC分类号： H01L23/488 ,  H01L23/49 ,  H01L21/60 ,  H01L23/31 ,  H01L23/495

CPC分类号： H01L23/49 ,  H01L21/50 ,  H01L23/293 ,  H01L23/295 ,  H01L23/3107 ,  H01L23/3192 ,  H01L23/49513 ,  H01L23/4952 ,  H01L23/49562 ,  H01L23/49582 ,  H01L23/562 ,  H01L23/564 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/29 ,  H01L24/30 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L29/1608 ,  H01L29/2003 ,  H01L2224/0381 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05552 ,  H01L2224/05553 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/0603 ,  H01L2224/291 ,  H01L2224/29111 ,  H01L2224/29118 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29294 ,  H01L2224/29439 ,  H01L2224/2949 ,  H01L2224/3011 ,  H01L2224/3201 ,  H01L2224/32013 ,  H01L2224/32058 ,  H01L2224/32059 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45147 ,  H01L2224/45155 ,  H01L2224/45565 ,  H01L2224/45616 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48755 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48855 ,  H01L2224/48997 ,  H01L2224/4903 ,  H01L2224/49111 ,  H01L2224/73265 ,  H01L2224/83055 ,  H01L2224/83192 ,  H01L2224/83194 ,  H01L2224/83439 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2224/8392 ,  H01L2224/83951 ,  H01L2224/85205 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85455 ,  H01L2224/8592 ,  H01L2224/85951 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2924/00011 ,  H01L2924/10272 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2924/06 ,  H01L2924/00012 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2924/01013 ,  H01L2924/01051 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/0105 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/83205

摘要： A semiconductor device (20, 24, 29, 32, 35, 38) includes a die pad (6), a wide gap semiconductor chip (SiC or GaN) (1) mounted on the die pad (6), a porous first sintered Ag layer (16) bonding the die pad (6) and the chip (1), and a reinforcing resin portion (17) covering a surface of the first sintered Ag layer (16) and a part of a side surface of the chip (1) and formed in a fillet shape. The semiconductor device (20, 24, 29, 32, 35, 38) further includes electrodes (1g, 1h, 2, 3, 4) on its main (1a) and back (1b) surfaces, the electrodes (1g, 1h, 2, 3, 4) being electrically connected to leads (7, 9, 11, 39), wherein the electrical connection at the front side is a wire (18, 19, 25, 26) connection and the electrical connection at the back side is the first sintered Ag layer (16). A porous second sintered Ag layer (36) or a second resin portion (30) reinforces the wire bonding portion on the electrode (1g, 2, 3). The semiconductor device (20, 24, 29, 32, 35, 38) further includes a sealing body (third resin) (14) which covers the chip (1), the first sintered Ag layer (16), and a part of the die pad (6).

摘要翻译： 一种半导体器件（20,24,29,32,35,38）包括管芯焊盘（6），安装在管芯焊盘（6）上的宽带隙半导体芯片（SiC或GaN）（1），多孔第一烧结体 （6）和芯片（1）接合的Ag层（16）;以及覆盖第一烧结Ag层（16）的表面和芯片侧面的一部分的加强树脂部分（17） 1）并形成圆角形状。 半导体器件（20,24,29,32,35,38）还包括在其主（1a）和背（1b）表面上的电极（1g，1h，2,3,4），电极（1g，1h， （2,3,4）电连接到引线（7,9,11,39），其中在正面的电连接是导线（18,19,25,26）连接并且背面的电连接 是第一个烧结Ag层（16）。 多孔的第二烧结Ag层（36）或第二树脂部分（30）加强电极（1g，2,3）上的引线键合部分。 半导体器件（20,24,29,32,35,38）还包括覆盖芯片（1），第一烧结Ag层（16）和第一烧结Ag层（16）的一部分的密封体（第三树脂） 芯片焊盘（6）。

公开(公告)号：EP2650905A3

公开(公告)日：2014-10-01

申请号：EP13003426.7

申请日：2005-06-02

申请人： The Board of Trustees of the University of Illinois

发明人： Nuzzo, Ralph G. ,  Rogers, John, A. ,  Menard, Etienne ,  Lee, Keon Jae ,  Khang, Dahl-Young ,  Sun, Yugang ,  Meitl, Matthew ,  Zhu, Zhengtao

IPC分类号： H01L21/30 ,  H01L21/326 ,  H01L21/4763 ,  H01L23/48 ,  H01L27/01 ,  H01L29/06 ,  H01L29/08 ,  H01L21/02

CPC分类号： H01L29/76 ,  B81C2201/0185 ,  B82Y10/00 ,  H01L21/02521 ,  H01L21/02603 ,  H01L21/02628 ,  H01L21/308 ,  H01L21/322 ,  H01L21/6835 ,  H01L23/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/29 ,  H01L24/32 ,  H01L24/80 ,  H01L24/83 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0753 ,  H01L27/1285 ,  H01L27/1292 ,  H01L29/04 ,  H01L29/06 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/12 ,  H01L29/78603 ,  H01L29/78681 ,  H01L29/78696 ,  H01L31/0392 ,  H01L31/03926 ,  H01L31/1804 ,  H01L31/1864 ,  H01L31/1896 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/32 ,  H01L2221/68368 ,  H01L2221/68381 ,  H01L2224/03 ,  H01L2224/0332 ,  H01L2224/0345 ,  H01L2224/03614 ,  H01L2224/0362 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05552 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05555 ,  H01L2224/05644 ,  H01L2224/05666 ,  H01L2224/08225 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/80 ,  H01L2224/80006 ,  H01L2224/80121 ,  H01L2224/80862 ,  H01L2224/80895 ,  H01L2224/83 ,  H01L2224/83005 ,  H01L2224/83121 ,  H01L2224/83192 ,  H01L2224/83193 ,  H01L2224/8385 ,  H01L2224/83862 ,  H01L2224/9202 ,  H01L2224/94 ,  H01L2224/95 ,  H01L2224/97 ,  H01L2924/00012 ,  H01L2924/01032 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13063 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15159 ,  H01L2924/15162 ,  H01L2924/15788 ,  H01L2924/1579 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S977/707 ,  Y10S977/724 ,  H01L2924/00014 ,  H01L2924/00

摘要： The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

公开(公告)号：EP2630660A1

公开(公告)日：2013-08-28

申请号：EP11788252.2

申请日：2011-10-20

申请人： Raytheon Company

发明人： GOOCH, Roland, W. ,  KOCIAN, Thomas, A. ,  BLACK, Stephen, H. ,  DIEP, Buu

IPC分类号： H01L27/146 ,  H01L23/10

CPC分类号： H01L27/14618 ,  B81B7/0077 ,  G01J5/045 ,  H01L23/10 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/94 ,  H01L27/14683 ,  H01L2224/04026 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05187 ,  H01L2224/05563 ,  H01L2224/05582 ,  H01L2224/05644 ,  H01L2224/05669 ,  H01L2224/29011 ,  H01L2224/29013 ,  H01L2224/291 ,  H01L2224/29144 ,  H01L2224/32225 ,  H01L2224/83815 ,  H01L2224/94 ,  H01L2924/0002 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/01074 ,  H01L2924/04941 ,  H01L2924/05341 ,  H01L2924/014 ,  H01L2224/83 ,  H01L2924/0105

摘要： In accordance with particular embodiments, a method for packaging an incident radiation detector includes depositing an opaque solder resistant material on a first surface of a transparent lid substrate configured to cover at least one detector. The method also includes forming at least one cavity in the lid substrate. The method further includes forming a first portion of at least one hermetic seal ring on the opaque solder resistant material. The first portion of each hermetic seal ring surrounds a perimeter of a corresponding cavity in the lid substrate. The method also includes aligning the first portion of the at least one hermetic seal ring with a second portion of the at least one hermetic seal ring. The method additionally includes bonding the first portion of the at least one hermetic seal ring with the second portion of the at least one hermetic seal ring with solder.

公开(公告)号：EP2012352A4

公开(公告)日：2012-07-25

申请号：EP07738740

申请日：2007-03-15

申请人： MURATA MANUFACTURING CO

发明人： FUNAKI TATSUYA

IPC分类号： H01L21/60 ,  H01L23/485

CPC分类号： H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0331 ,  H01L2224/03505 ,  H01L2224/0401 ,  H01L2224/05073 ,  H01L2224/05124 ,  H01L2224/05573 ,  H01L2224/0558 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05794 ,  H01L2224/05839 ,  H01L2224/1131 ,  H01L2224/11332 ,  H01L2224/11505 ,  H01L2224/1155 ,  H01L2224/13099 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13294 ,  H01L2224/13339 ,  H01L2224/16501 ,  H01L2224/245 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/76155 ,  H01L2224/81055 ,  H01L2224/81097 ,  H01L2224/81193 ,  H01L2224/8121 ,  H01L2224/8123 ,  H01L2224/81379 ,  H01L2224/81594 ,  H01L2224/81639 ,  H01L2224/81801 ,  H01L2224/8184 ,  H01L2224/8284 ,  H01L2224/8384 ,  H01L2224/94 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01058 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/15165 ,  H01L2924/15787 ,  H01L2924/19041 ,  Y10S977/779 ,  H01L2924/00014 ,  H01L2924/0543 ,  H01L2924/20107 ,  H01L2924/01014

公开(公告)号：EP1609179B1

公开(公告)日：2012-03-14

申请号：EP04723639.3

申请日：2004-03-26

申请人： International Business Machines Corporation

发明人： ANGELL, David ,  BEAULIEU, Frederic ,  HISADA, Takashi ,  KELLY, Adreanne ,  MCKNIGHT, Samuel ,  MIYAI, Hiromitsu ,  PETRARCA, Kevin, Shawn ,  SAUTER, Wolfgang ,  VOLANT, Richard, Paul ,  WEINSTEIN, Caitlin

IPC分类号： H01L21/60 ,  H01L23/485

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L2224/05073 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05187 ,  H01L2224/05556 ,  H01L2224/05558 ,  H01L2224/05624 ,  H01L2224/45144 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/3025 ,  H01L2924/04941 ,  H01L2924/00014 ,  H01L2924/00

摘要： Disclosed is a reinforced bond pad structure having nonplanar dielectric structures and a metallic bond layer conformally formed over the nonplanar dielectric structures. The nonplanar dielectric structures are substantially reproduced in the metallic bond layer so as to form nonplanar metallic structures. Surrounding each of the nonplanar metallic structures is a ring of dielectric material which provides a hard stop during probing of the bond pad so as to limit the amount of bond pad that can be removed during probing.

公开(公告)号：EP2309536A1

公开(公告)日：2011-04-13

申请号：EP10185173.1

申请日：2010-10-01

申请人： STmicroelectronics SA ,  STMicroelectronics (Crolles 2) SAS

发明人： Felk, Yacine ,  Chaabouni, Hamed ,  Farcy, Alexis

IPC分类号： H01L21/60

CPC分类号： H01L24/08 ,  H01L24/03 ,  H01L24/05 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L24/742 ,  H01L24/80 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/034 ,  H01L2224/035 ,  H01L2224/0401 ,  H01L2224/05073 ,  H01L2224/05187 ,  H01L2224/08145 ,  H01L2224/085 ,  H01L2224/13025 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/80143 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/80905 ,  H01L2224/80909 ,  H01L2224/83907 ,  H01L2224/9202 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2924/01006 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01058 ,  H01L2924/01094 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/05442

摘要： L'invention concerne un procédé d'assemblage d'une première puce semiconductrice (P2) munie de plots (5B) sur une deuxième puce ou tranche semiconductrice (P1) munie de plots (5A), consistant à recouvrir la ou les puces d'un diélectrique (20), à superposer les deux puces (P1,P2), les plots (5A,5B) étant disposés sensiblement en regard, et à appliquer une différence de potentiel entre les plots (5A,5B) des première (P2) et deuxième (P1) puces de façon à provoquer un claquage du diélectrique (20) et une diffusion du conducteur constituant les plots (5A,5B) dans les zones claquées, d'où il résulte qu'il se forme un trajet conducteur (21) entre les plots en regard (5A,5B).

摘要翻译： 该方法包括覆盖半导体芯片即 集成电路芯片或晶片（P1，P2），具有电介质（20）和重叠的半导体芯片，其中，所述电介质由氧化硅或碳掺杂的氢化硅氧化钛的层。 芯片的焊盘（5A，5B）被布置彼此相对的，其中所述垫由铜制成。 的电压差的芯片的焊垫之间施加以使所述电介质的击穿和导体的形成焊盘成细分的区域，其中导电路径相反的焊盘之间形成的扩散。