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    Gray scale liquid crystal display panel
    1.
    发明公开
    Gray scale liquid crystal display panel 失效
    Flüssigkristall-Anzeigetafel mit Graustufen。

    公开(公告)号：EP0631172A1

    公开(公告)日：1994-12-28

    申请号：EP94107610.1

    申请日：1994-05-17

    申请人： HOSIDEN CORPORATION

    发明人： Aoki, Shigeo ,  Ukai, Yasuhiro ,  Sunata, Tomihisa ,  Nakagawa, Takanobu ,  Shibazaki, Minoru

    IPC分类号： G02F1/1337

    CPC分类号： G02F1/133753 ,  G02F1/13363 ,  G02F1/13471 ,  G02F1/136213 ,  G02F1/1396 ,  G02F2001/133757 ,  G02F2001/133761 ,  G02F2001/134345 ,  G02F2001/134354 ,  G02F2203/30

    摘要： Liquid crystal is confined between two transparent substrates (16,17). Pixel electrodes (13) are formed on the inner surface of the transparent substrate (17) in the form of a matrix while a common electrode (12) is formed on the inner surface of the transparent substrate (16). Each pixel electrode (13) is divided into subpixel electrodes (13₁,13₂). The subpixel electrode (13₁) is connected to the drain of a thin film transistor (21) formed adjacent the subpixel electrode to apply driving voltage to the electrode. The subpixel electrode (13₂) is supplied with capacitance-divided driving voltage through a capacitor comprising the electrode (13₁) and a control capacitor (15) connected thereto with an insulation layer (14) interposed therebetween. Each of the subpixel electrodes (13₁,13₂) are divided into two domains on which are formed alignment layers (41a,41b,42a,42b), in opposition to which alignment layers (43a,43b,44a,44b) are formed on the common electrode (12). One of the opposed alignment layers is adapted to impart to the liquid crystal a pretilt angle greater than the other alignment layer is. One of the adjacent orientating films in the same plane is adapted to impart to the liquid crystal a pretilt angle greater than the other orientating film is.

    摘要翻译： 液晶被限制在两个透明基板（16,17）之间。 像素电极（13）以矩阵的形式形成在透明基板（17）的内表面上，而公共电极（12）形成在透明基板（16）的内表面上。 每个像素电极（13）被分成子像素电极（131,132）。 子像素电极（131）连接到与子像素电极相邻形成的薄膜晶体管（21）的漏极，以对电极施加驱动电压。 子像素电极（132）通过包含电极（131）的电容器和与其连接的绝缘层（14）与其连接的控制电容器（15）提供电容分压驱动电压。 每个子像素电极（131,132）被分成两个区域，在其上形成有对准层（41a，41b，42a，42b），与公共电极上形成有取向层（43a，43b，44a，44b） （12）。 一个相对的取向层适于使液晶具有比另一取向层大的预倾角。 相同平面中的相邻取向膜中的一个适于使液晶具有大于另一取向膜的预倾角。

    Thin-film transistor and method of fabricating the same
    4.
    发明公开
    Thin-film transistor and method of fabricating the same 失效
    薄膜晶体管及其制造方法。

    公开(公告)号：EP0217406A2

    公开(公告)日：1987-04-08

    申请号：EP86113674.5

    申请日：1986-10-03

    申请人： HOSIDEN CORPORATION

    发明人： Aoki, Shigeo ,  Ukai, Yasuhiro

    IPC分类号： H01L29/78

    CPC分类号： H01L29/6675 ,  H01L29/458 ,  H01L29/78618 ,  H01L29/78666

    摘要： A thin-film transistor comprising a source electrode (19a) and a drain electrode (15a) formed in a spaced-apart relation to each other on a substrate (11), a semiconductor layer (21) formed over the source and drain electrodes, a gate insulating film (22) formed on the semiconductor layer and a gate electrode (23) on the gate insulating film, is disclosed. First and second ohmic contact layers (33, 34) are formed over the entiry of the contact areas of the semiconductor layer in contact with the source and drain electrodes.

    Liquid-crystal display device
    6.
    发明公开
    Liquid-crystal display device 失效
    液晶显示装置

    公开(公告)号：EP0390225A1

    公开(公告)日：1990-10-03

    申请号：EP90108818.7

    申请日：1986-10-03

    申请人： HOSIDEN CORPORATION

    发明人： Aoki, Shigeo ,  Ukai, Yasuhiro ,  Matsushita, Yasuhiro

    IPC分类号： G02F1/136

    CPC分类号： H01L27/12 ,  G02F1/1362 ,  G02F1/1368

    摘要： A liquid-crystal cell is formed with first and second transparent substrates (11, 12) opposing each other and a liquid crystal (14) sealed therebetween. A plurality of display electrodes (15) are formed in a matrix arrange­ment with rows and columns on the inner surface of said first transparent substrate (11). Gate bus lines are formed on the first transparent substrate along the respective rows of display electrodes. Source bus (19) lines are formed on the first transparent substrate along the respective columns of display electrodes. Thin-film tran­sistors (36) are formed on the first transparent substrate at the intersections of the gate and source bus lines. The thin-film transistors (36) each have the gate electrode connected to the associated gate bus line, the source electrode connected to the associated source bus line and the drain electrode connected to the corresponding display electrode. A common electrode (17) is formed on the second transparent substrate (12) such that it faces the display electrodes. The opposed sides of the source and drain electrodes (15a, 19a) of each thin-film transistor (36) are constituted by tapered surfaces (31, 32) with the approach on the side of the first transparent substrate. Ohmic contact layers (25, 26) are formed on these tapered surfaces. A semiconductor (21) of each thin-film transistor is formed over the source and drain electrodes via the ohmic contact layers.

    摘要翻译： 液晶单元由彼此相对的第一和第二透明基板（11,12）和密封在其间的液晶（14）形成。 多个显示电极（15）在所述第一透明基板（11）的内表面上以行和列的矩阵排列形成。 沿着各行显示电极在第一透明衬底上形成栅极总线。 源极总线（19）线沿着各列显示电极形成在第一透明基板上。 在栅极和源极总线的交叉点处的第一透明基板上形成薄膜晶体管（36）。 每个薄膜晶体管（36）具有连接到相关栅极总线的栅极，源极连接到相关源极总线，漏极连接到相应显示电极。 在第二透明基板（12）上形成公共电极（17），使其面向显示电极。 每个薄膜晶体管（36）的源电极和漏电极（15a，19a）的相对侧由渐缩表面（31,32）构成，并且靠近第一透明衬底一侧。 欧姆接触层（25,26）形成在这些锥形表面上。 每个薄膜晶体管的半导体（21）通过欧姆接触层形成在源电极和漏电极之上。

    Thin film transistor
    7.
    发明公开
    Thin film transistor 失效
    薄膜晶体管

    公开(公告)号：EP0276002A3

    公开(公告)日：1990-08-29

    申请号：EP88100845.2

    申请日：1988-01-21

    申请人： HOSIDEN CORPORATION

    发明人： Ukai, Yasuhiro ,  Aoki, Shigeo

    IPC分类号： H01L29/78 ,  H01L29/161 ,  H01L29/163 ,  H01L29/62

    CPC分类号： G02F1/1368 ,  H01L29/154 ,  H01L29/1604 ,  H01L29/432 ,  H01L29/7782 ,  H01L29/78684 ,  H01L29/78687 ,  H01L31/03765 ,  Y02E10/548

    摘要： A thin film transistor having an active layer (19, 24) comprising amorphous silicon carbide (a-Si 1-x C x ) formed between source and drain electrodes (14,15), a gate insulating film (17) formed in contact with the active layer (19, 24) and a gate electrode (18) formed in contact with the gate insulating film (17), the active layer. The gate insulating layer (17, 23) can be made of an amorphous silicon carbide layer having a carbon content greater than the carbon content of the active layer (19, 24). The active layer (24) can further ba a laminated structure of well layers and barrier layers, both made of hydrogenated amorphous silicon carbide with different carbon content, or a laminated structure of well layers made of hydrogenated amorphous silicon and barrier layers made of hydrogenated amorphous silicon carbide.

    摘要翻译： 一种薄膜晶体管，其具有在源极和漏极之间形成的包括非晶碳化硅（a-Si1-xCx）的有源层（19,24），与有源层接触形成的栅极绝缘膜（17） （19,24）以及与所述栅极绝缘膜（17）接触而形成的栅电极（18），所述有源层。 栅绝缘层17,23可以由碳含量大于有源层19,24的碳含量的非晶碳化硅层制成。 有源层（24）可以进一步包括均由具有不同碳含量的氢化非晶碳化硅制成的阱层和阻挡层的叠层结构，或者由氢化非晶硅制成的阱层和由氢化非晶碳制成的阻挡层的叠层结构 碳化硅。

    Thin film transistor
    10.
    发明公开
    Thin film transistor 失效
    薄膜晶体管

    公开(公告)号：EP0484987A3

    公开(公告)日：1992-08-05

    申请号：EP91121805.5

    申请日：1988-01-21

    申请人： HOSIDEN CORPORATION

    发明人： Ukai, Yasuhiro ,  Aoki, Shigeo

    IPC分类号： H01L29/784 ,  H01L29/163 ,  H01L29/161 ,  H01L29/62

    CPC分类号： G02F1/1368 ,  H01L29/154 ,  H01L29/1604 ,  H01L29/432 ,  H01L29/7782 ,  H01L29/78684 ,  H01L29/78687 ,  H01L31/03765 ,  Y02E10/548

    摘要： A thin film transistor having an active layer (24) formed between source and drain electrodes (14,15), a gate insulating film (25) formed in contact with the active layer (24) and a gate electrode (18) formed in contact with the gate insulating film (25), said active layer (24) being a multilayer structure of well layers made of hydrogenated amorphous silicon and barrier layers made of hydrogenated amorphous silicon carbide. The gate insulating film (25) can further be made of an amorphous silicon carbide layer having a carbon content greater than the carbon content of the active layer (24).

    摘要翻译： 一种薄膜晶体管，具有形成在源极和漏极（14,15）之间的有源层（24），与有源层（24）接触形成的栅极绝缘膜（25）和接触形成的栅极电极（18） 与所述栅极绝缘膜（25）一起，所述有源层（24）是由氢化非晶硅制成的阱层和由氢化非晶碳化硅制成的阻挡层的多层结构。 栅绝缘膜（25）可以进一步由碳含量大于有源层（24）的碳含量的非晶碳化硅层制成。