OPTICAL GLASS AND OPTICAL PRODUCT USING THE SAME
    1.
    发明公开
    OPTICAL GLASS AND OPTICAL PRODUCT USING THE SAME 审中-公开
    光学玻璃,光学产品,这其中包括

    公开(公告)号:EP1357091A4

    公开(公告)日:2004-04-21

    申请号:EP01943871

    申请日:2001-06-29

    申请人: HOYA CORP

    IPC分类号: C03C3/19 C03C3/21

    CPC分类号: C03C3/19 C03C3/21

    摘要: Provided is an optical glass having a high refractive index and high dispersion characteristics applicable to mass production of precision press molded products, mainly having optical constants of a refractive index nd in the range of 1.7 to 2.0 and an Abbe number nu d in the range of 20 to 32, and an optical part and a precision press molding material. An optical glass comprising as glass components, as molar percents, 12-34 percent of P2O5; 0.2-15 percent of B2O3 (where the total quantity of P2O5 and B2O3 is 15-35 percent); 0-45 percent of WO3; 0-25 percent of Nb2O5; 0 to 10 percent of TiO2 (where the total quantity of WO3, Nb2O5, and TiO2 is 20-45 percent); 0-25 percent of BaO; 0-20 percent of ZnO (where the total quantity of BaO and ZnO is less than 30 percent); 2-30 percent of Li2O; 2-30 percent of Na2O; 0-15 percent of K2O (where the total quantity of Li2O, Na2O, and K2O is 10-45 percent); 0-10 percent of CaO; 0-10 percent of SrO; 0-5 percent of Al2O3; 0-5 percent of Y2O3; 0-1 percent of Sb2O3; and 0-1 percent of As2O3; where the total quantity of all of the above-listed components is equal to or more than 94 percent. An optical part or precision press molding material comprised of this optical glass.

    LIGHT-EMITTING DIODE
    3.
    发明公开
    LIGHT-EMITTING DIODE 审中-公开
    发光二极管

    公开(公告)号:EP1622207A4

    公开(公告)日:2007-08-08

    申请号:EP04729225

    申请日:2004-04-23

    申请人: HOYA CORP

    IPC分类号: H01L33/02 H01S5/30 H01S5/323

    摘要: A light-emitting diode with high luminous efficiency is disclosed which is free from deformation or defect of crystal caused by a dopant. The light-emitting diode emits no light of unnecessary wavelengths and has a wide selection of emission wavelengths. The light-emitting diode comprises a light-emitting layer composed of an ambipolar semiconductor containing no dopant, and an electron implanting electrode, namely an n electrode and a hole implanting electrode, namely a p electrode joined to the light-emitting layer.