公开(公告)号：EP3282478A4

公开(公告)日：2018-05-02

申请号：EP16785938

申请日：2016-04-28

申请人： HUAWEI TECH CO LTD

发明人： FU HUILI ,  CAI SHUJIE ,  LUO FEIYU

IPC分类号： H01L23/485 ,  H01L21/60 ,  H01L23/31 ,  H01L23/367

CPC分类号： H01L23/367 ,  H01L21/02107 ,  H01L21/76895 ,  H01L23/3128 ,  H01L23/3171 ,  H01L23/3192 ,  H01L23/485 ,  H01L23/528 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/16 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/03462 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/13023 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/16152 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

摘要： Embodiments of the present invention provide an IC die and a preparation method thereof, so as to resolve a problem that a currently used heat dissipation method of an IC chip has a limited effect in an aspect of reducing a temperature of a heat point on a surface of the IC chip. The IC die includes an underlay; an active component; an interconnection layer, covering the active component, where the interconnection layer includes multiple metal layers and multiple dielectric layers, the multiple metal layers and the multiple dielectric layers are alternately arranged, a metal layer whose distance to the active component is the farthest in the multiple metal layers includes metal cabling and a metal welding pad; and a heat dissipation layer, where the heat dissipation layer covers a region above the interconnection layer except a position corresponding to the metal welding pad, the heat dissipation layer is located under a package layer, the package layer includes a plastic packaging material, and the heat dissipation layer includes an electrical-insulating material whose heat conductivity is greater than a preset value.