摘要:
An object of the present invention is to provide a method for producing an optical synthetic quartz glass, having a birefringence of lower than 0.5 nm/cm and having favorable refractive index distribution, yet without lowering the productivity, as well as to provide an annealing furnace suitably used in practicing said method. The method is characterized in steps of raising the temperature of a columnar optical synthetic quartz glass preform (G) to a temperature of from 800°C to 1200°C, and after keeping the temperature of the synthetic quartz glass preform in said range for a definite time, lowering the temperature; the temperature is lowered with a temperature difference of from 1 to 20°C between the temperature of a light transmitting surface (E) of the optical synthetic quartz glass preform and the temperature of an outer peripheral side surface of the optical synthetic quartz glass preform with temperature-lowering rates of from 2 to 50°C/hour, respectively.
摘要:
An object of the present invention is to provide a production method which is low in cost and easily and surely increases surface layer cleanliness (purity) of a quartz glass jig used in semiconductor industry, and to provide a quartz glass jig improved in surface layer cleanliness (purity). The above object is solved in a first embodiment of the invention comprising processing a quartz glass material through various treatments including flame treatment into a desired shape, then annealing it for strain removal, and washing it, whereby the shaped tool is heated at a high temperature falling between 800°C and 1300°C for at least 30 minutes in a clean atmosphere containing HCI gas, the heating step being after it is annealed for strain removal but before being washed. In a second alternative the step of annealing the shaped tool for strain removal is effected in a clean atmosphere containing HCL gas at a temperature falling between 800°C and 1300°C for at least 30 minutes (instead of the heat treatment step in HCL). A quartz glass tool for use in the field of semiconductor industry is obtained showing a total mean concentration of Li, Na, Mg, K, Ca, Fe, Cr, Ni and Cu of at most 1.0 ppm in its surface layer to a depth of at least 100 µm.
摘要:
An object of the present invention is to provide a quartz glass body, especially a quartz glass jig for plasma reaction in producing semiconductors having excellent resistance against plasma corrosion, particularly, excellent corrosion resistance against F-based gaseous plasma; and a method for producing the same. A body made of quartz glass containing a metallic element and having an improved resistance against plasma corrosion is provided that contains bubbles and crystalline phase at an amount expressed by projected area of less than 100 mm 2 per 100 cm 3 .
摘要:
An object of the present invention is to provide an improved blank such that an optical member of a high homogeneity can be obtained therefrom, and to provide a vessel and a heat treatment method for heat-treating a highly uniform synthetic quartz blank. In a first aspect of the invention a special designed blank is provided showing a concave shaped outer surface. In a second aspect of the invention a special designed vessel for heat-treating blanks is provided, whereby the degree of heat emission at the center is set higher than that of the surroundings.
摘要:
An object of the invention is to provide a synthetic quartz glass material for use in constructing optics for transmitting ArF excimer laser radiations having an energy density per pulse in a range of from 0.001 to 0.5 mJ/cm 2 , particularly suitable for use in constructing lenses, prisms, windows, and the like for semiconductor wafer aligners, which yields small change in birefringence in case laser is irradiated. The objects above have been accomplished by a synthetic quartz glass material for use in the optics of an ArF aligner transmitting ArF excimer laser radiations having an OH group concentration of 5 ppm or higher but not higher than 300 ppm, and a hydrogen molecule concentration of 1 × 10 16 molecules/cm 3 or higher but lower than 2 × 10 17 moleculues/cm 3 , which yields an energy density per pulse in a range of from 0.001 to 0.5 mJ/cm 2 , having a uniformity in refraction index Δn of 1 × 10 -6 or lower, a birefringence of 1 nm/cm or lower, and an internal transmittance for ultraviolet radiation 193.4 nm in wavelength of 99.7 % or higher.
摘要翻译:本发明的目的是提供一种合成石英玻璃材料,用于构建用于传输具有0.001至0.5mJ / cm 2范围内的每脉冲能量密度的ArF准分子激光辐射的光学器件,特别适用于 构造用于半导体晶片对准器的透镜,棱镜,窗等,其在激光被照射的情况下产生双折射的小的变化。 上述目的已经通过用于ArF对准器的光学器件中的合成石英玻璃材料来实现,该ArF对准器透射具有OH基浓度为5ppm或更高但不高于300ppm,并且氢分子浓度为1的ArF准分子激光辐射 x 10 16分子/ cm 3或更高但低于2×10 17分子/ cm 3,其产生每个脉冲的能量密度在0.001至0.5mJ / cm 2的范围内 具有1×10 -6以下的折射率DELTA n的均匀性,1nm / cm以下的双折射和99.7%以上的波长的紫外线的内部透射率为193.4nm。
摘要:
A method for heat treating a synthetic quartz glass for optical use in a heating furnace, that comprises covering the surroundings of a synthetic quartz glass body with a SiO 2 powder having a mean dissolved hydrogen molecule concentration of 1 × 10 19 molecules/cm 3 or higher, and then heat treating the body.
摘要翻译:一种用于在加热炉中热处理光学用合成石英玻璃的方法,其包括用平均溶解氢分子浓度为1×10 19分子/ cm 2的SiO 2粉末覆盖合成石英玻璃体的周围, 3>以上,然后热处理身体。