-
公开(公告)号：EP1367596A1
公开(公告)日：2003-12-03
申请号：EP03253060.2
申请日：2003-05-16
发明人： Perlov, Craig M. , Forrest, Stephen
CPC分类号： H01L27/285 , B82Y10/00 , G11C13/0009 , G11C13/0014 , G11C17/16 , G11C17/165 , G11C2213/71 , G11C2213/72 , H01L27/1021 , H01L51/0053 , H01L51/0078 , H01L51/0595
摘要： A donor/acceptor-organic-junction sheet (606) employed within an electronic memory array (118) of a cross-point diode memory. The donor/acceptor-organic-junction sheet (606) is anistropic with respect to flow of electrical current and is physically unstable above a threshold current. Thus, the volume of the donor/acceptor-organic-junction sheet (206) between a row line (602) and column line (604) at a two-dimensional memory array grid point serves both as the diode component (210) and as the fuse component (208) of a diode-and-fuse memory element and is electrically insulated from similar volumes of the donor/acceptor-organic-junction sheet between neighboring grid point intersections.
摘要翻译： 在交叉点二极管存储器的电子存储器阵列（118）内采用的施主/受体 - 有机结合片（606）。 供体/受体 - 有机结合片（606）相对于电流流动是无捻的，并且在阈值电流之上物理上是不稳定的。 因此，在二维存储器阵列栅极点处的行线（602）和列线（604）之间的施主/受体 - 有机结合片（206）的体积用作二极管组件（210）和二极管组件 二极管和熔丝存储器元件的熔丝部件（208），并且与相邻网格点交点处的施主/受体 - 有机结合片的类似体积电绝缘。
-
公开(公告)号：EP1239520A3
公开(公告)日：2004-01-07
申请号：EP02251548.0
申请日：2002-03-05
CPC分类号： H01L27/1021 , G11C17/16 , H01L2924/0002 , H01L2924/00
摘要： A common substrate (102) has fold lines (108) which define separate sections (105, 107) and provide a means for folding the sections (105, 107) on each other to form a multiple-layer memory device (20). In one embodiment, the substrate (102) has a fold line (108) formed by alterations to the substrate material. A first conductor section (105) is formed with an array of parallel conductors or wires (104) spaced across the section. A second section (107) on the common substrate (102) has an array of parallel conductors or wires (106) spaced across the second section (107), the conductors (106) being perpendicular to the conductors (104) on the first section (105). The first and second sections (105, 107) are folded along the fold line (108) over on top of each other, after a semiconductor layer has been deposited on one or both of the conductor layers, thereby forming a matrix (25) of memory cells. The fold line (108) is formed by removal of some of the material, such as by creasing, or by altering a property of the material, such as by changing the strength or flexibility of the substrate material. The conductors (104, 106) of the first and second sections (105, 107) may be fabricated with narrowing cross-section areas (132, 136) at points where fuses (26) are to be set to an open circuit.
摘要翻译： 公共衬底（102）具有限定分开的部分（105,107）的折叠线（108），并且提供用于折叠彼此的部分（105,107）以形成多层存储器件（20）的装置。 在一个实施例中，衬底（102）具有通过改变衬底材料形成的折叠线（108）。 第一导体部分（105）形成有平行的导体或导线（104）的阵列，该阵列跨过该部分间隔开。 公共衬底（102）上的第二部分（107）具有在第二部分（107）间隔开的平行导体或电线（106）阵列，导体（106）垂直于第一部分上的导体（104） （105）。 在半导体层已经沉积在一个或两个导体层上之后，第一和第二部分（105,107）沿着折叠线（108）折叠在彼此的顶部上，从而形成矩阵（25） 记忆细胞 折叠线（108）通过例如通过改变材料的性质例如通过改变基底材料的强度或柔性来去除一些材料而形成，例如通过压痕或改变材料的性质。 第一和第二部分（105,107）的导体（104,106）可以在将熔断器（26）设置为开路的点处制造成具有变窄的横截面面积（132,136）。
-
公开(公告)号：EP0734017B1
公开(公告)日：2001-11-28
申请号：EP96301838.7
申请日：1996-03-18
发明人： Gibson, Gary , Kamins, Theodore I. , Keshner, Marvin S. , Neberhuis, Steven L. , Perlov, Craig M. , Yang, Chung Ching
IPC分类号： G11B9/10
CPC分类号： G11B9/10 , Y10S977/849 , Y10S977/861 , Y10S977/863 , Y10S977/869 , Y10S977/881 , Y10S977/943
-
公开(公告)号：EP1239520A2
公开(公告)日：2002-09-11
申请号：EP02251548.0
申请日：2002-03-05
IPC分类号： H01L27/06 , H01L21/822
CPC分类号： H01L27/1021 , G11C17/16 , H01L2924/0002 , H01L2924/00
摘要： A common substrate (102) has fold lines (108) which define separate sections (105, 107) and provide a means for folding the sections (105, 107) on each other to form a multiple-layer memory device (20). In one embodiment, the substrate (102) has a fold line (108) formed by alterations to the substrate material. A first conductor section (105) is formed with an array of parallel conductors or wires (104) spaced across the section. A second section (107) on the common substrate (102) has an array of parallel conductors or wires (106) spaced across the second section (107), the conductors (106) being perpendicular to the conductors (104) on the first section (105). The first and second sections (105, 107) are folded along the fold line (108) over on top of each other, after a semiconductor layer has been deposited on one or both of the conductor layers, thereby forming a matrix (25) of memory cells. The fold line (108) is formed by removal of some of the material, such as by creasing, or by altering a property of the material, such as by changing the strength or flexibility of the substrate material. The conductors (104, 106) of the first and second sections (105, 107) may be fabricated with narrowing cross-section areas (132, 136) at points where fuses (26) are to be set to an open circuit.
-
公开(公告)号：EP0734017A1
公开(公告)日：1996-09-25
申请号：EP96301838.7
申请日：1996-03-18
发明人： Gibson, Gary , Kamins, Theodore I. , Keshner, Marvin S. , Neberhuls, Steven L. , Perlov, Craig M. , Yang, Chung Ching
IPC分类号： G11B9/10
CPC分类号： G11B9/10 , Y10S977/849 , Y10S977/861 , Y10S977/863 , Y10S977/869 , Y10S977/881 , Y10S977/943
摘要： Device (100) including many field emitters (102,104) in close proximity to a storage medium (106), and a micromover (110), all in a partial vacuum. Each field emitter can generate an electron beam current. The storage medium (106) has many storage areas (108) on it, with each field emitter responsible for a number of storage areas. Also, each storage area (108) can be in a number of different states to represent the information stored in that area. In storing information to the storage device (100), the power density of an electron beam current (156) is increased to change the state of the storage area (108) bombarded by the electron beam current (156). In reading information from the device (100), the power density of the electron beam current (156) is reduced to generate a signal current from the storage area (108) bombarded by the electron beam current (156). During reading, the power density is selected to be low enough so that no writing occurs. The magnitude of the signal current depends on the states of the storage area (108). The information stored in the storage area (108) is read by measuring the magnitudes of the signal current. Finally, the micromover (110) can scan the storage medium (106) with respect to the field emitters so that each field emitter (102) can access many storage areas.
摘要翻译： 包括紧邻存储介质（106）的许多场发射器（102,104）的装置（100）以及全部处于部分真空中的微喷器（110）。 每个场发射器可以产生电子束电流。 存储介质（106）上有许多存储区（108），每个场发射器负责多个存储区。 而且，每个存储区域（108）可以处于多个不同状态以表示存储在该区域中的信息。 在向存储装置（100）存储信息时，电子束电流（156）的功率密度增加以改变由电子束电流（156）轰击的存储区域（108）的状态。 在从设备（100）读取信息时，电子束电流（156）的功率密度减小以从电子束电流（156）轰击的存储区域（108）产生信号电流。 在读取期间，功率密度被选择为足够低以便不发生写入。 信号电流的大小取决于存储区域（108）的状态。 通过测量信号电流的大小来读取存储在存储区（108）中的信息。 最后，微机（110）可以相对于场发射器扫描存储介质（106），使得每个场发射器（102）可以访问许多存储区域。
-
-
-
-
搜索结果
5 条记录 (耗时 0.011 秒)
