公开(公告)号：EP0895279A1

公开(公告)日：1999-02-03

申请号：EP96905009.5

申请日：1996-03-06

申请人： Hitachi, Ltd.

发明人： SATOH, Hidetoshi ,  NAKAYAMA, Yoshinori ,  OKUMURA, Masahide ,  OHTA, Hiroya ,  SAITOU, Norio

IPC分类号： H01L21/30

CPC分类号： G03F7/70616 ,  G03F7/70433 ,  G03F7/70458 ,  G03F7/70633 ,  H01J37/3045 ,  H01J2237/3175 ,  Y10S430/143

摘要： In a semiconductor circuit device fabricating process in which a reduction image projection exposure apparatus and an electron beam exposure apparatus are in a mixed use in its exposure process, pattern position shift errors for each exposure apparatus are measured and corrected at the time of drawing by means of an electron beam drawing apparatus, thereby enhancing the alignment accuracy.
First, a pattern for measuring position shifts is exposed using a stepper and the electron beam drawing apparatus. Then, the position shift errors are measured using an identical coordinate position measuring device. Accidental errors have been mixed in the measurement result at this time. On account of this, measurement data at a certain point are smoothed by taking a summation average with data on the periphery thereof, thus decreasing influences of the accidental errors. Moreover, by inverting positive or negative signs of the data on the position shift errors, the data are made into correction data. Then, the correction data are stored. When an exposure is performed by the electron beam drawing apparatus with the pattern exposed by the stepper as a reference, the correction data for the two apparatuses are transferred to the electron beam drawing apparatus, the two data are added to detected mark positions, and at positions after the addition, pattern position shifts within a wafer surface are determined. At the time of exposure, the exposure is performed at positions obtained by subtracting the correction data from the determined pattern position shifts. This method makes it possible to correct both position shift errors within the wafer surface due to the stepper and position shift errors due to the electron beam drawing apparatus, thus allowing the alignment accuracy to be enhanced. Also, this result makes it possible to enhance yield for products in the fabricating process.

摘要翻译： 在其中曝光过程中混合使用缩小图像投影曝光设备和电子束曝光设备的半导体电路器件制造过程中，每个曝光设备的图案位置偏移误差在绘制时通过手段被测量和校正 从而提高了对准精度。 首先，使用步进器和电子束绘图装置来曝光用于测量位置偏移的图案。 然后，使用相同的坐标位置测量装置来测量位置偏移误差。 此时测量结果中的意外错误已经混合在一起。 因此，通过对其周边的数据进行求和平均来平滑某个点的测量数据，从而减少偶然误差的影响。 此外，通过反转位置偏移误差上的数据的正负符号，数据被制成校正数据。 然后，存储校正数据。 当通过电子束绘图设备以步进曝光的图案作为参考执行曝光时，两个设备的校正数据被传送到电子束绘图设备，两个数据被添加到检测到的标记位置，并且在 在添加之后，确定晶片表面内的图案位置偏移。 在曝光时，在通过从所确定的图案位置偏移中减去校正数据而获得的位置处执行曝光。 该方法使得可以校正由于步进器引起的晶片表面内的位置偏移误差和由于电子束绘图装置引起的位置偏移误差，从而允许提高对准精度。 而且，这个结果可以提高制造过程中产品的产量。