公开(公告)号：EP4418042A1

公开(公告)日：2024-08-21

申请号：EP23156643.1

申请日：2023-02-14

申请人： ASML Netherlands B.V.

发明人： SHENG, Zhifeng ,  BAJALAN, Nastaran ,  JACOBS, Jort, Adrianus, Thomas

IPC分类号： G03F7/00 ,  G06N3/0455 ,  G06N3/0895 ,  G06N20/00 ,  H01L21/66

CPC分类号： G03F7/706845 ,  G03F7/70525 ,  G03F7/70633 ,  G03F7/70616 ,  G06N3/0895 ,  G06N3/0455 ,  H01L22/20 ,  H01L22/12 ,  G06N3/047 ,  G06N3/096 ,  G06N3/09

摘要： A method for predicting process information characterizing a lithographic process from image data. The neural network is configured to receive image data of a patterned portion of a substrate and to generate predicted process information. The method comprises obtaining a plurality of labeled training items, each training item including training image data, a domain label and process information. The method further comprises processing the training image data to generate a domain latent representation, a process information latent representation and a residual latent representation. The method further comprises generating predicted image data, predicted domain label and predicted process information. The method further comprises generating a training domain latent representation and a training process information latent representation. The method further comprises updating weights of the neural network to reduce discrepancies between the labeled training items and the predicted image data, domain label and predicted process label.

公开(公告)号：EP3906495B1

公开(公告)日：2024-07-24

申请号：EP19762675.7

申请日：2019-08-23

IPC分类号： G03F7/00 ,  G06F30/398

CPC分类号： G03F7/705 ,  G03F7/70441 ,  G03F7/70616 ,  G06F30/398

公开(公告)号：EP3964888B1

公开(公告)日：2024-05-15

申请号：EP21189551.1

申请日：2021-08-04

IPC分类号： G02F1/35 ,  G03F7/20 ,  G02B6/02 ,  G02F1/365

CPC分类号： G02F1/3528 ,  G02F1/3507 ,  G02B6/02328 ,  G02F1/365 ,  G03F7/70616

公开(公告)号：EP3418806A1

公开(公告)日：2018-12-26

申请号：EP17176638.9

申请日：2017-06-19

申请人： ASML Netherlands B.V.

发明人： SMORENBURG, Petrus, Wilhelmus ,  BRUSSAARD, Gerrit, Jacobus, Hendrik ,  BANINE, Vadim, Yevgenyevich

IPC分类号： G03F7/20 ,  G01N21/956

CPC分类号： G03F7/70616 ,  G01N21/956

摘要： Methods and apparatus for generation of radiation by high harmonic generation, HHG. The apparatus comprises: a chamber for holding a vacuum, the chamber comprising a radiation input, a radiation output and an interaction region at which, in use, a medium is present, the chamber being arranged such that, in use, when driving radiation propagates through the radiation input and is incident upon the medium, the medium emits radiation via HHG, the emitted radiation propagating through the radiation output; and at least one plasma generator at the radiation input and/or the radiation output for generating a plasma volume allowing the driving radiation and emitted radiation, respectively, to propagate through the plasma volume.

公开(公告)号：EP3159738B1

公开(公告)日：2018-12-12

申请号：EP16183209.2

申请日：2006-03-23

申请人： Nikon Corporation

发明人： KONDO, Shinjiro

IPC分类号： H01L21/027 ,  G03F1/38 ,  G03F7/20

CPC分类号： G03F9/7084 ,  G03F1/44 ,  G03F7/706 ,  G03F7/70616 ,  G03F7/70633 ,  G03F9/7076

摘要： A method of measuring shot shape includes sequentially exposing a substrate with main scale marks (32) in compliance with a predetermined map, and forming a reference grid including a plurality of the main scale marks (32) arranged in the predetermined map in at least one shot region, exposing a shot for measuring, via a projection optical system, that includes a plurality of auxiliary scale marks (34) arranged in the predetermined map in the shot region, measuring a relative positional relationship between adjacent main scale marks (32), measuring an amount of deviation between the main scale marks (32) and the auxiliary scale marks (34), and correcting the reference grid based on the relative positional relationship, and calculating a shot shape of the shot for measuring based on the corrected reference grid and the amount of deviation.

公开(公告)号：EP3404488A1

公开(公告)日：2018-11-21

申请号：EP17171935.4

申请日：2017-05-19

申请人： ASML Netherlands B.V.

发明人： CRAMER, Hugo, Augustinus, Joseph

IPC分类号： G03F7/20 ,  G03F9/00

CPC分类号： G03F7/70633 ,  G01B11/26 ,  G03F7/70616 ,  G03F7/70625 ,  G03F7/7085 ,  G03F9/7007

摘要： Methods and apparatus for measuring a target formed on a substrate are disclosed. The target (80) comprises an alignment structure (76A-D) and a metrology structure (84). In one method, a first measurement process is performed that comprises illuminating the target with first radiation and detecting radiation resulting from scattering of the first radiation from the target. A second measurement process comprises illuminating the target with second radiation and detecting radiation resulting from scattering of the second radiation from the target. The first measurement process detects a position of the alignment structure. The second measurement process uses the position of the alignment structure detected by the first measurement process to align a radiation spot (82) of the second radiation onto a desired location within the metrology structure.

公开(公告)号：EP3388896A1

公开(公告)日：2018-10-17

申请号：EP17166691.0

申请日：2017-04-14

申请人： ASML Netherlands B.V.

发明人： PANDEY, Nitesh ,  LIAN, Jin ,  SAMEE-UR-REHMAN,

IPC分类号： G03F7/20

CPC分类号： G03F7/70633 ,  G03F7/70616

摘要： Methods and apparatus for measuring a plurality of structures formed on a substrate are disclosed. In one arrangement, a method comprises obtaining data from a first measurement process. The first measurement process comprises individually measuring each of the plurality of structures to measure a first property of the structure. A second measurement process is used to measure a second property of each of the plurality of structures. The second measurement process comprises illuminating each structure with radiation having a radiation property that is individually selected for that structure using the measured first property for the structure.

公开(公告)号：EP1881374B1

公开(公告)日：2018-09-05

申请号：EP07252745.0

申请日：2007-07-09

申请人： ASML Netherlands B.V.

发明人： Dusa, Mircea ,  den Boef, Arie Jeffrey ,  Cramer, Hugo, Augustine Joseph

IPC分类号： G03F7/20

CPC分类号： G03F7/70683 ,  G03F7/70516 ,  G03F7/70616 ,  G03F7/70625 ,  G03F7/70641

摘要： In a scatterometric method differential targets with different sensitivities to parameters of interest are printed in a calibration matrix and difference spectra obtained. principal component analysis is applied to the difference spectra to obtain a calibration function that is less sensitive to variations in the underlying structure than a calibration function obtained from spectra obtained from a single target.

公开(公告)号：EP3339958A1

公开(公告)日：2018-06-27

申请号：EP16206235.0

申请日：2016-12-22

申请人： ASML Netherlands B.V.

发明人： MOS, Everhardus Cornelis ,  WILDENBERG, Jochem Sebastiaan ,  WALLERBOS, Erik, Johannes Maria ,  VAN DER SCHAAR, Maurits ,  STAALS, Frank

IPC分类号： G03F7/20

CPC分类号： G03F7/70525 ,  G03F7/70616 ,  G03F7/70625

摘要： A method for improving the yield of a lithographic process, the method comprising:
determining a parameter fingerprint of a performance parameter across a substrate, the parameter fingerprint including information relating to uncertainty in the performance parameter;
determining a process window fingerprint of the performance parameter across the substrate, the process window being associated with an allowable range of the performance parameter; and
determining a probability metric associated with the probability of the performance parameter being outside an allowable range.
Optionally a correction to the lithographic process is determined based on the probability metric.

公开(公告)号：EP2443440A4

公开(公告)日：2018-02-28

申请号：EP10790255

申请日：2010-06-18

申请人： KLA-TENCOR CORP

发明人： CHUANG YUNG-HO ,  SOLARZ RICHARD W ,  SHAFER DAVID R ,  TSAI BIN-MING BENJAMIN ,  BROWN DAVID L

IPC分类号： G01N21/956 ,  G01B11/30 ,  G01N21/33 ,  G03F1/84 ,  H01L21/66 ,  H05K13/08

CPC分类号： G01N21/95 ,  G01N21/8806 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/95676 ,  G01N2201/068 ,  G03F1/84 ,  G03F7/70616 ,  H05G2/008

摘要： Inspection of EUV patterned masks, blank masks, and patterned wafers generated by EUV patterned masks requires high magnification and a large field of view at the image plane. An EUV inspection system can include a light source directed to an inspected surface, a detector for detecting light deflected from the inspected surface, and an optic configuration for directing the light from the inspected surface to the detector. In particular, the detector can include a plurality of sensor modules. Additionally, the optic configuration can include a plurality of mirrors that provide magnification of at least 100× within an optical path less than 5 meters long. In one embodiment, the optical path is approximately 2-3 meters long.