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1.发明公开CHARGED PARTICLE BEAM DEVICE, THIN FILM FORMING METHOD, DEFECT CORRECTION METHOD AND DEVICE FABRICATION METHOD 有权DEVICE辐射带电粒子薄膜形成法，纠错方式和方法，用于制造器件
公开(公告)号：EP2624279A1
公开(公告)日：2013-08-07
申请号：EP11828920.6
申请日：2011-09-22
IPC分类号： H01J37/305 , H01J37/30 , H01J37/317
CPC分类号： H01L21/02263 , C23C16/045 , C23C16/24 , C23C16/325 , C23C16/401 , C23C16/42 , C23C16/486 , C23C16/487 , C23C16/56 , H01J37/3178 , H01L21/02532 , H01L21/0262 , H01L21/02631 , H01L21/28079 , H01L21/28211 , H01L22/20 , H01L29/66568 , H01L2924/0002 , H01L2924/00
摘要： A charged particle beam apparatus is provided that enables faster semiconductor film deposition than the conventional deposition that uses silicon hydrides and halides as source gases. The charged particle beam apparatus includes a charged particle source 1, a condenser lens electrode 2, a blanking electrode 3, a scanning electrode 4, a sample stage 10 on which a sample 9 is mounted, a secondary charged particle detector 8 that detects a secondary charged particle 7 generated from the sample 9 in response to the charged particle beam irradiation, a reservoir 14 that accommodates cyclopentasilane as a source gas, and a gas gun 11 that supplies the source gas to the sample 9.
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2.发明授权CHARGED PARTICLE BEAM DEVICE, THIN FILM FORMING METHOD, DEFECT CORRECTION METHOD AND DEVICE FABRICATION METHOD 有权DEVICE辐射带电粒子薄膜形成法，纠错方式和方法，用于制造器件
公开(公告)号：EP2624279B1
公开(公告)日：2017-04-05
申请号：EP11828920.6
申请日：2011-09-22
IPC分类号： H01J37/305 , H01J37/30 , H01J37/317 , C23C16/04 , C23C16/24 , C23C16/32 , C23C16/40 , C23C16/42 , C23C16/48 , C23C16/56 , H01L21/02 , H01L21/28 , H01L21/66 , H01L29/66
CPC分类号： H01L21/02263 , C23C16/045 , C23C16/24 , C23C16/325 , C23C16/401 , C23C16/42 , C23C16/486 , C23C16/487 , C23C16/56 , H01J37/3178 , H01L21/02532 , H01L21/0262 , H01L21/02631 , H01L21/28079 , H01L21/28211 , H01L22/20 , H01L29/66568 , H01L2924/0002 , H01L2924/00
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