公开(公告)号：EP4016854A1

公开(公告)日：2022-06-22

申请号：EP20855296.8

申请日：2020-03-31

申请人： Huawei Technologies Co., Ltd.

发明人： CHENG, Zhe ,  PENG, Daqing ,  ZHANG, Zhiwei ,  PENG, Jie ,  HU, Bin ,  YUN, Lungang

IPC分类号： H04B1/3822 ,  G01S7/03

摘要： Embodiments of the present invention provide a radio frequency apparatus including a radome, an absorber, and a radio frequency circuit board, which may be used for millimeter wave radar of an intelligent automobile, to reduce high-frequency radiation interference from a radio frequency chip and an antenna feeder. The radome is configured to accommodate the radio frequency circuit board. The absorber includes a top surface, one or more supporting pieces, and one or more fixing pieces. The radio frequency circuit board includes at least one radio frequency chip, at least one antenna feeder, and at least one radio frequency antenna. The top surface covers the at least one radio frequency chip and the at least one antenna feeder, but does not cover the at least one radio frequency antenna. The one or more fixing pieces are configured to fix the absorber on the radio frequency circuit board. The one or more supporting pieces are configured to support the top surface between the radome and the radio frequency circuit board.

公开(公告)号：EP2768015A1

公开(公告)日：2014-08-20

申请号：EP13799475.2

申请日：2013-08-02

申请人： Huawei Technologies Co., Ltd.

发明人： YUN, Lungang ,  HUANG, An ,  TIAN, Pengbo

IPC分类号： H01L21/58 ,  H01L23/48

CPC分类号： H01L24/83 ,  H01L23/66 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05638 ,  H01L2224/1134 ,  H01L2224/13144 ,  H01L2224/1411 ,  H01L2224/2733 ,  H01L2224/29019 ,  H01L2224/29078 ,  H01L2224/29082 ,  H01L2224/29144 ,  H01L2224/32057 ,  H01L2224/32245 ,  H01L2224/32502 ,  H01L2224/32506 ,  H01L2224/73265 ,  H01L2224/81192 ,  H01L2224/83192 ,  H01L2224/83385 ,  H01L2224/83444 ,  H01L2224/83805 ,  H01L2224/92247 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/1306 ,  H01L2924/1421 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/01014

摘要： Relating to electronic components, the present invention provides a method for welding a gold-silicon eutectic chip, and a transistor, to resolve a technical problem in a current gold-silicon eutectic welding method that a cost of a transistor increases because a gold layer electroplated on a chip carrier is relatively thick. The method for welding a gold-silicon eutectic chip includes: electroplating a gold layer with a thickness smaller than or equal to 1 micron on surfaces of a chip carrier; bonding multiple gold protrusions on the gold layer in a welding region; and rubbing a chip in the welding region at a eutectic temperature to form a welding layer. The transistor includes a chip, a chip carrier, and a middle layer connecting the chip and the chip carrier, where the welding middle layer is a welding layer obtained by using the above welding method. The present invention reduces an amount of gold in use and lowers a cost of gold-silicon eutectic welding to a relatively large extent, and, accordingly, cuts down the cost of a transistor.

摘要翻译： 关于电子元件，本发明提供了一种用于焊接金 - 硅共晶芯片和晶体管的方法，以解决目前的金 - 硅共晶焊接方法中的技术问题，即由于镀金层，晶体管的成本增加 芯片上的载体比较厚。 用于焊接金 - 硅共晶芯片的方法包括：在芯片载体的表面上电镀厚度小于或等于1微米的金层; 在焊接区域的金层上粘合多个金突起; 并且在共晶温度下在焊接区域中摩擦芯片以形成焊接层。 晶体管包括芯片，芯片载体和连接芯片和芯片载体的中间层，其中焊接中间层是通过使用上述焊接方法获得的焊接层。 本发明可以减少金的使用量，同时降低金 - 硅共晶焊接的成本，从而降低晶体管的成本。