公开(公告)号：EP1652235A4

公开(公告)日：2008-09-17

申请号：EP04757122

申请日：2004-07-19

Applicant: IBM

Inventor： JOSHI RAJIV V ,  WILLIAMS RICHARD Q

IPC: H01L29/786 ,  H01L20060101 ,  H01L21/336 ,  H01L21/8244 ,  H01L21/84 ,  H01L27/01 ,  H01L27/11 ,  H01L27/12 ,  H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC classification number: H01L29/785 ,  H01L21/84 ,  H01L21/845 ,  H01L27/11 ,  H01L27/1108 ,  H01L27/1203 ,  H01L27/1207 ,  H01L27/1211 ,  H01L29/42392 ,  H01L29/66795 ,  H01L29/78687 ,  Y10S257/903

Abstract: A channel (16) of a FinFET (10) has a channel core (24) and a channel envelope (32), each made from a semiconductor material defining a different lattice structure to exploit strained silicon properties. A gate is coupled to the channel envelope through a gate dielectric. Exemplary materials are Si and SixGe1-x, wherein 78

公开(公告)号：EP2255381A4

公开(公告)日：2012-03-07

申请号：EP09704712

申请日：2009-01-23

Applicant: IBM

Inventor： JOSHI RAJIV V ,  HSU LOIUS LU-CHEN ,  WANG PING-CHUAN ,  YANG ZHIJIAN

IPC: H01L21/337 ,  G11C7/12 ,  G11C11/12 ,  G11C11/404 ,  G11C11/412

CPC classification number: G11C29/04 ,  G11C7/12 ,  G11C11/412