公开(公告)号：EP1905074A4

公开(公告)日：2012-06-27

申请号：EP06773946

申请日：2006-06-26

Applicant: IBM

Inventor： BRYANT ANDRES ,  NOWAK EDWARD J ,  WILLIAMS RICHARD Q

IPC: H01L21/84 ,  H01L27/108 ,  H01L29/786

CPC classification number: H01L27/1203 ,  H01L21/84 ,  H01L27/0811 ,  H01L28/40 ,  H01L29/78648 ,  Y10T436/235 ,  Y10T436/25125 ,  Y10T436/2525 ,  Y10T436/25375

公开(公告)号：EP1910954A4

公开(公告)日：2012-04-11

申请号：EP06800366

申请日：2006-07-26

Applicant: IBM

Inventor： CHIDAMBARRAO DURESETI ,  JORDAN DONALD L ,  MCCULLEN JUDITH H ,  ONSONGO DAVID M ,  WAGNER TINA ,  WILLIAMS RICHARD Q

IPC: G06F7/48 ,  G06F17/50

CPC classification number: G06F17/5068 ,  G06F17/5036 ,  H01L29/7843

公开(公告)号：EP1652235A4

公开(公告)日：2008-09-17

申请号：EP04757122

申请日：2004-07-19

Applicant: IBM

Inventor： JOSHI RAJIV V ,  WILLIAMS RICHARD Q

IPC: H01L29/786 ,  H01L20060101 ,  H01L21/336 ,  H01L21/8244 ,  H01L21/84 ,  H01L27/01 ,  H01L27/11 ,  H01L27/12 ,  H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC classification number: H01L29/785 ,  H01L21/84 ,  H01L21/845 ,  H01L27/11 ,  H01L27/1108 ,  H01L27/1203 ,  H01L27/1207 ,  H01L27/1211 ,  H01L29/42392 ,  H01L29/66795 ,  H01L29/78687 ,  Y10S257/903

Abstract: A channel (16) of a FinFET (10) has a channel core (24) and a channel envelope (32), each made from a semiconductor material defining a different lattice structure to exploit strained silicon properties. A gate is coupled to the channel envelope through a gate dielectric. Exemplary materials are Si and SixGe1-x, wherein 78