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1.STRUCTURE AND METHOD FOR MOSFET GATE ELECTRODE LANDING PAD 审中-公开
Title translation: 结构及方法MOSFET栅极电极着陆区公开(公告)号:EP1994563A4
公开(公告)日:2011-06-22
申请号:EP07797080
申请日:2007-01-16
Applicant: IBM
Inventor: CLEVENGER LAWRENCE A , DALTON TIMOTHY J , HSU LOUIS C , RADENS CARL , WONG KWONG-HON , YANG CHIH-CHAO
IPC: H01L27/01 , H01L21/8234
CPC classification number: H01L27/1203 , H01L21/28114 , H01L21/823456 , H01L21/84 , H01L29/42376 , H01L2924/0002 , H01L2924/00