-
1.
公开(公告)号:EP1588403A4
公开(公告)日:2010-03-24
申请号:EP04702490
申请日:2004-01-15
Applicant: IBM
Inventor: RADENS CARL , DOKUMACI OMER H , DORIS BRUCE B , GLUSCHENKOV OLEG , MANDELMAN JACK A
IPC: H01L29/78 , H01L21/265 , H01L21/28 , H01L21/336 , H01L29/49
CPC classification number: H01L29/4983 , H01L21/26586 , H01L21/28105 , H01L29/66484 , H01L29/665 , H01L29/6656 , H01L29/6659 , H01L29/7831 , H01L29/7836 , Y10S257/90
-
2.METHOD AND STRUCTURE FOR FORMING SLOT VIA BITLINE FOR MRAM DEVICES 审中-公开
Title translation: 方法和结构,每一位线FOR MRAM器件插槽的形成公开(公告)号:EP1911096A4
公开(公告)日:2008-10-22
申请号:EP06788341
申请日:2006-07-24
Applicant: IBM
Inventor: DALTON TIMOTHY J , HSU LOUIS L C , WONG KEITH KWONG HON , YANG CHIH-CHAO , GAIDIS MICHAEL C , RADENS CARL , CLEVENGER LAWRENCE A
IPC: H01L27/22 , H01L21/768 , H01L21/8247 , H01L23/528 , H01L43/12
CPC classification number: B82Y10/00 , H01L27/222 , H01L43/12
Abstract: A magnetic random access memory (MRAM) device includes a magnetic tunnel junction (MTJ) stack formed over a lower wiring level, a hardmask formed on the MTJ stack, and an upper wiring level formed over the hardmask. The upper wiring level includes a slot via bitline formed therein, the slot via bitline in contact with the hardmask and in contact with an etch stop layer partially surrounding sidewalls of the hardmask.
-
3.PATTERN FORMATION EMPLOYING SELF-ASSEMBLED MATERIAL 有权
Title translation: 金属材料材料EINSETZENDE MUSTERBILDUNG公开(公告)号:EP2250123A4
公开(公告)日:2014-10-15
申请号:EP09709244
申请日:2009-02-03
Applicant: IBM
Inventor: BLACK CHARLES T , DALTON TIMOTHY J , DORIS BRUCE B , RADENS CARL
CPC classification number: H01L21/0338 , B81B2203/0369 , B81C1/00031 , B81C2201/0149 , B81C2201/0198 , B82Y30/00 , H01L21/0337 , H01L51/0017 , Y10S977/882 , Y10S977/887 , Y10S977/888 , Y10T428/24479 , Y10T428/2457 , Y10T428/24612 , Y10T428/24736 , Y10T428/24802
-
4.
公开(公告)号:EP2235743A4
公开(公告)日:2013-03-20
申请号:EP09704665
申请日:2009-01-15
Applicant: IBM
Inventor: DALTON TIMOTHY , DORIS BRUCE B , KIM HO-CHEOL , RADENS CARL
IPC: H01L21/033 , B81C1/00
CPC classification number: H01L21/0337 , B81C1/00031 , B81C2201/0149 , B82Y10/00 , B82Y30/00 , H01L21/0338 , Y10T428/24612
-
5.STRUCTURE AND METHOD FOR MOSFET GATE ELECTRODE LANDING PAD 审中-公开
Title translation: 结构及方法MOSFET栅极电极着陆区公开(公告)号:EP1994563A4
公开(公告)日:2011-06-22
申请号:EP07797080
申请日:2007-01-16
Applicant: IBM
Inventor: CLEVENGER LAWRENCE A , DALTON TIMOTHY J , HSU LOUIS C , RADENS CARL , WONG KWONG-HON , YANG CHIH-CHAO
IPC: H01L27/01 , H01L21/8234
CPC classification number: H01L27/1203 , H01L21/28114 , H01L21/823456 , H01L21/84 , H01L29/42376 , H01L2924/0002 , H01L2924/00
-
6.HIGH DENSITY PLANAR MAGNETIC DOMAIN WALL MEMORY APPARATUS AND METHOD OF FORMING THE SAME 有权
Title translation: 具有平面磁畴壁的高密度记忆体装置及其制造方法公开(公告)号:EP2140458A4
公开(公告)日:2010-05-05
申请号:EP07867608
申请日:2007-12-04
Applicant: IBM
Inventor: GAIDIS MICHAEL C , CLEVENGER LAWRENCE A , DALTON TIMOTHY J , DEBROSSE JOHN K , HSU LOUIS L C , RADENS CARL , WONG KEITH K H , YANG CHIH-CHAO
CPC classification number: G11C19/0841 , B82Y10/00 , G11C5/02 , G11C11/161 , G11C11/1675 , Y10T29/53165
-
-
-
-
-