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1.发明公开
公开(公告)号：EP1911096A4
公开(公告)日：2008-10-22
申请号：EP06788341
申请日：2006-07-24
Applicant: IBM
Inventor： DALTON TIMOTHY J , HSU LOUIS L C , WONG KEITH KWONG HON , YANG CHIH-CHAO , GAIDIS MICHAEL C , RADENS CARL , CLEVENGER LAWRENCE A
IPC: H01L27/22 , H01L21/768 , H01L21/8247 , H01L23/528 , H01L43/12
CPC classification number: B82Y10/00 , H01L27/222 , H01L43/12
Abstract: A magnetic random access memory (MRAM) device includes a magnetic tunnel junction (MTJ) stack formed over a lower wiring level, a hardmask formed on the MTJ stack, and an upper wiring level formed over the hardmask. The upper wiring level includes a slot via bitline formed therein, the slot via bitline in contact with the hardmask and in contact with an etch stop layer partially surrounding sidewalls of the hardmask.
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公开(公告)号：EP1994563A4
公开(公告)日：2011-06-22
申请号：EP07797080
申请日：2007-01-16
Applicant: IBM
Inventor： CLEVENGER LAWRENCE A , DALTON TIMOTHY J , HSU LOUIS C , RADENS CARL , WONG KWONG-HON , YANG CHIH-CHAO
IPC: H01L27/01 , H01L21/8234
CPC classification number: H01L27/1203 , H01L21/28114 , H01L21/823456 , H01L21/84 , H01L29/42376 , H01L2924/0002 , H01L2924/00
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3.发明公开HIGH DENSITY PLANAR MAGNETIC DOMAIN WALL MEMORY APPARATUS AND METHOD OF FORMING THE SAME 有权具有平面磁畴壁的高密度记忆体装置及其制造方法
公开(公告)号：EP2140458A4
公开(公告)日：2010-05-05
申请号：EP07867608
申请日：2007-12-04
Applicant: IBM
Inventor： GAIDIS MICHAEL C , CLEVENGER LAWRENCE A , DALTON TIMOTHY J , DEBROSSE JOHN K , HSU LOUIS L C , RADENS CARL , WONG KEITH K H , YANG CHIH-CHAO
CPC classification number: G11C19/0841 , B82Y10/00 , G11C5/02 , G11C11/161 , G11C11/1675 , Y10T29/53165
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Patent Agency Ranking4.发明公开ANISOTROPIC STRESS GENERATION BY STRESS-GENERATING LINERS HAVING A SUBLITHOGRAPHIC WIDTH 有权GENERATING各向异性电压除以与宽SUBLITHOGRTAFISCHER电压生成衬砌
公开(公告)号：EP2235744A4
公开(公告)日：2011-12-14
申请号：EP09704513
申请日：2009-01-15
Applicant: IBM
Inventor： CLEVENGER LAWRENCE A , DORIS BRUCE B , HUANG ELBERT E , PURUSHOTHAMAN SAMPATH , RADENS CARL J
IPC: H01L29/78 , H01L21/311 , H01L21/336 , H01L21/8238
CPC classification number: H01L21/31144 , H01L21/823807 , H01L21/823814 , H01L21/823871 , H01L21/84 , H01L27/1203 , H01L29/665 , H01L29/7833 , H01L29/7843
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公开(公告)号：EP1875499A4
公开(公告)日：2009-11-04
申请号：EP06749449
申请日：2006-04-07
Applicant: IBM
Inventor： YANG CHIH-CHAO , CLEVENGER LAWRENCE A , DALTON TIMOTHY J , HSU LOUIS C
IPC: H01L21/8242 , H01L21/20
CPC classification number: H01L23/5223 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
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公开(公告)号：EP1920493A4
公开(公告)日：2011-05-04
申请号：EP06802645
申请日：2006-08-30
Applicant: IBM
Inventor： HSU LOUIS C , CLEVENGER LAWRENCE A , DALTON TIMOTHY J , RADENS CARL J , WONG KEITH KWONG HON , YANG CHIH-CHAO
CPC classification number: H01H50/005 , H01H2050/007 , Y10T29/4902 , Y10T29/49105 , Y10T29/49147
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公开(公告)号：EP1869700A4
公开(公告)日：2010-12-15
申请号：EP06740771
申请日：2006-04-07
Applicant: IBM
Inventor： YANG CHIH-CHAO , CLEVENGER LAWRENCE A , COWLEY ANDREW P , DALTON TIMOTHY J , YOON MEEYOUNG H
IPC: H01L21/4763 , H01L21/768
CPC classification number: H01L21/76849 , H01L21/76807 , H01L21/76814 , H01L21/76831 , H01L21/76843 , H01L2924/0002 , H01L2924/00
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8.发明公开INTERCONNECT STRUCTURES WITH ENCASING CAP AND METHODS OF MAKING THEREOF 审中-公开与EINSCHLIESSUNGSSKAPPE及其生产相关结构过程
公开(公告)号：EP1836726A4
公开(公告)日：2010-07-28
申请号：EP05852629
申请日：2005-12-02
Applicant: IBM
Inventor： CLEVENGER LAWRENCE A , DALTON TIMOTHY J , HSU LOUIS C , RADENS CARL J , STANDAERT THEODORUS E , WONG KEITH KWONG HON , YANG CHIH-CHAO
IPC: H01L21/4763
CPC classification number: H01L21/76852 , H01L21/288 , H01L21/2885 , H01L21/76885 , H01L23/5226 , H01L23/53238 , H01L2924/0002 , H01L2924/00
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