公开(公告)号：EP1356498A4

公开(公告)日：2009-05-13

申请号：EP01990114

申请日：2001-12-13

Applicant: IBM ,  INFINEON TECHNOLOGIES CORP

Inventor： ENGEL BRETT H ,  HOINKIS MARK ,  MILLER JOHN A ,  SEO SOON-CHEON ,  WANG YUN-YU ,  WONG HON WONG

IPC: H01K3/10 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/50 ,  H01L23/52 ,  H01L23/532 ,  H05K3/02

CPC classification number: H01L21/76843 ,  H01L21/76846 ,  H01L23/53238 ,  H01L2924/0002 ,  Y10T29/49126 ,  Y10T29/49128 ,  Y10T29/49155 ,  Y10T29/49156 ,  Y10T29/49165 ,  H01L2924/00

Abstract: In integrated circuits having copper interconnect (30, 50) and low-k interlayer dielectrics (40), a problem of open circuits after heat treatment was discovered and solved bz the use of a first liner layer of Cr (42), followed by a conformal liner layer of CVD TiN (46), followed in turn bz a final liner layer of Ta or TaN (48), thus improving adhesion between the via (50) and the underlying copper layer (30) while maintianing low resistance.

公开(公告)号：EP1470580A4

公开(公告)日：2005-07-20

申请号：EP02784578

申请日：2002-11-22

Applicant: INFINEON TECHNOLOGIES AG ,  INFINEON TECHNOLOGIES CORP

Inventor： CHEN TZE-CHIANG ,  ENGEL BRETT H ,  FITZSIMMONS JOHN A ,  KANE TERENCE ,  LUSTIG NAFTALI E ,  MCDONALD ANN ,  MCGAHAY VINCENT ,  SEO SOON-CHEON ,  STAMPER ANTHONY K ,  WANG YUN YU ,  KALTALIOGLU ERDEM

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/44 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC classification number: H01L21/76834 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76832 ,  H01L23/5226 ,  H01L23/53228 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An advanced back-end-of-line (BEOL) metallization structure is disclosed. The structure includes a bilayer diffusion barrier or cap, where the first cap layer (116, 123) is formed of a dielectric material preferably deposited by a high density plasma chemical vapor deposition (HDP CVD) process, and the second cap layer (117, 124) is formed of a dielectric material preferably deposited by a plasma-enhanced chemical vapor deposition (PE CVD) process. A method for forming the BEOL metallization structure is also disclosed. The invention is particularly useful in interconnect structures comprising low-k dielectric material for the inter-layer dielectric (ILD) and copper for the conductors.

Abstract translation: 公开了一种先进的后端（BEOL）金属化结构。 该结构包括双层扩散阻挡层或盖，其中第一覆盖层由优选通过高密度等离子体化学气相沉积（HDP CVD）工艺沉积的电介质材料形成，并且第二覆盖层由优选沉积的介电材料形成 通过等离子体增强化学气相沉积（PE CVD）工艺。 还公开了一种用于形成BEOL金属化结构的方法。 本发明在包括用于层间电介质（ILD）的低k电介质材料和用于导体的铜的互连结构中是特别有用的。

公开(公告)号：EP1756856A4

公开(公告)日：2010-02-17

申请号：EP05755089

申请日：2005-05-31

Applicant: IBM

Inventor： DUNN DERREN N ,  KIM HYUNGJUN ,  ROSSNAGEL STEPHEN M ,  SEO SOON-CHEON

IPC: H01L21/283 ,  H01L21/285 ,  H01L21/4763 ,  H01L21/52 ,  H01L21/768 ,  H01L23/52 ,  H01L23/532

CPC classification number: H01L21/76846 ,  H01L21/28562 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00