公开(公告)号：EP1843971A1

公开(公告)日：2007-10-17

申请号：EP06705054.2

申请日：2006-02-06

申请人： IMEC Inter Universitair Micro-Electronica Centrum ,  KATHOLIEKE UNIVERSITEIT LEUVEN

发明人： WITVROUW, Ann ,  VAN HOOF, Chris ,  HELLÍN RICO, Raquel Consuelo ,  MUSCAT, Anthony, Joseph ,  FRANSAER, Jan ,  CELIS, Jean-Pierre

IPC分类号： B81B7/00

CPC分类号： B81C1/00293 ,  B81C2203/0145

摘要： Manufacturing a semiconductor device involves forming (200) a sacrificial layer where a micro cavity is to be located, forming (210) a metal layer of thickness greater than 1 micron over the sacrificial layer, forming (220) a porous layer from the metal layer, the porous layer having pores of length greater than ten times their breadth, and having a breadth in the range 10nm -500 nanometers. The pores can be created by anodising, electrodeposition or dealloying. Then the sacrificial layer can be removed (230) through the porous layer, to form the micro cavity, and pores can be sealed (240). Encapsulating MEMS devices with a porous layer can reduce costs by avoiding using photolithography for shaping the access holes since the sacrificial layer is removed through the porous membrane.

公开(公告)号：EP1843971B1

公开(公告)日：2016-04-13

申请号：EP06705054.2

申请日：2006-02-06

申请人： IMEC ,  KATHOLIEKE UNIVERSITEIT LEUVEN

发明人： WITVROUW, Ann ,  VAN HOOF, Chris ,  HELLÍN RICO, Raquel Consuelo ,  MUSCAT, Anthony, Joseph ,  FRANSAER, Jan ,  CELIS, Jean-Pierre

IPC分类号： B81C1/00

CPC分类号： B81C1/00293 ,  B81C2203/0145