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    PASSIVATION OF LIGHT-RECEIVING SURFACES OF SOLAR CELLS WITH CRYSTALLINE SILICON
    2.
    发明公开
    PASSIVATION OF LIGHT-RECEIVING SURFACES OF SOLAR CELLS WITH CRYSTALLINE SILICON 审中-公开
    结晶硅对太阳电池光接收表面钝化的研究

    公开(公告)号：EP3161874A1

    公开(公告)日：2017-05-03

    申请号：EP15812793.6

    申请日：2015-06-25

    申请人： Total Marketing Services ,  SunPower Corporation

    发明人： JOHNSON, Michael C. ,  TRACY, Kieran Mark ,  TOMADA, Princess Carmi ,  SMITH, David D. ,  RIM, Seung Bum ,  JAFFRENNOU, Périne

    IPC分类号： H01L31/0216 ,  H01L31/0288 ,  H01L31/0232 ,  H01L31/18

    CPC分类号： H01L31/02167 ,  H01L31/02363 ,  H01L31/0682 ,  H01L31/0745 ,  H01L31/0747 ,  Y02E10/547

    摘要： Methods of passivating light-receiving surfaces of solar cells with crystalline silicon, and the resulting solar cells, are described. In an example, a solar cell includes a silicon substrate having a light-receiving surface. An intrinsic silicon layer is disposed above the light-receiving surface of the silicon substrate. An N-type silicon layer is disposed on the intrinsic silicon layer. One or both of the intrinsic silicon layer and the N-type silicon layer is a micro- or poly-crystalline silicon layer. In another example, a solar cell includes a silicon substrate having a light-receiving surface. A passivating dielectric layer is disposed on the light-receiving surface of the silicon substrate. An N-type micro- or poly-crystalline silicon layer disposed on the passivating dielectric layer.

    摘要翻译： 描述了用晶体硅钝化太阳能电池的光接收表面的方法以及所得到的太阳能电池。 在一个示例中，太阳能电池包括具有光接收表面的硅基板。 本征硅层设置在硅衬底的光接收表面上方。 在本征硅层上设置N型硅层。 本征硅层和N型硅层中的一个或两个是微晶硅层或多晶硅层。 在另一个例子中，太阳能电池包括具有光接收表面的硅基板。 钝化介电层设置在硅衬底的光接收表面上。 设置在钝化介电层上的N型微晶硅或多晶硅层。

    SOLAR CELL EMITTER REGION FABRICATION WITH DIFFERENTIATED P-TYPE AND N-TYPE REGION ARCHITECTURES
    6.
    发明公开
    SOLAR CELL EMITTER REGION FABRICATION WITH DIFFERENTIATED P-TYPE AND N-TYPE REGION ARCHITECTURES 审中-公开
    具有差异化P型和N型区域架构的太阳能电池发射器区域制造

    公开(公告)号：EP3084840A1

    公开(公告)日：2016-10-26

    申请号：EP14871735.8

    申请日：2014-12-12

    申请人： SunPower Corporation

    发明人： RIM, Seung Bum ,  SMITH, David D. ,  QIU, Taiqing ,  WESTERBERG, Staffan ,  TRACY, Kieran Mark ,  BALU, Venkatasubramani

    IPC分类号： H01L31/049

    摘要： Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region.

    摘要翻译： 描述了制造具有差异化的P型和N型区域架构的太阳能电池发射极区域的方法以及所得到的太阳能电池。 在一个示例中，背接触太阳能电池包括具有光接收表面和背表面的衬底。 第一导电类型的第一多晶硅发射极区域设置在设置在基板背面上的第一薄介电层上。 第二不同导电类型的第二多晶硅发射极区域设置在设置在衬底背面上的第二薄介电层上。 第三薄介电层横向地设置在第一多晶硅发射区和第二多晶硅发射区之间。 第一导电接触结构设置在第一多晶硅发射区上。 第二导电接触结构设置在第二多晶硅发射区上。