公开(公告)号：EP3933926A1

公开(公告)日：2022-01-05

申请号：EP20184095.6

申请日：2020-07-03

申请人： IMEC VZW

发明人： LI, Yunlong ,  GUERRIERI, Stefano ,  MAO, Ming ,  MORENO HAGELSIEB, Luis

IPC分类号： H01L27/146 ,  H01L51/00

摘要： A method for forming a pixelated optoelectronic stack 8 is disclosed, the method comprising (i) obtaining a stacked layer structure comprising (a) a bottom electrode layer 21, (b) an optoelectronic layer 22 over the bottom electrode layer 21, and (c) a patterned hard-mask (261) comprising a pattern over the optoelectronic layer, (ii) replicating the pattern into the optoelectronic layer 22 and the bottom electrode layer 21, thereby obtaining a first intermediate pixelated stack comprising at least two islands of stack 3 separated from one another by stack-free areas, (iii) providing an electrically insulating layer 4 on the first intermediate pixelated stack, (iv) removing a top portion of the electrically insulating layer and removing any remaining hard-mask so that a top surface of the electrically insulating layer 4 is coplanar with an exposed top surface of the first intermediate pixelated stack, yielding a second intermediate pixelated stack, and (v) forming a top transparent electrode layer 6 over the second intermediate pixelated stack.

公开(公告)号：EP3367428A1

公开(公告)日：2018-08-29

申请号：EP17157578.0

申请日：2017-02-23

申请人： IMEC vzw

发明人： CHAN, Boon Teik ,  MAO, Ming ,  De SCHEPPER, Peter ,  KOCSIS, Michael

IPC分类号： H01L21/768 ,  H01L21/033 ,  H01L21/311

CPC分类号： H01L21/76802 ,  H01L21/0274 ,  H01L21/033 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31051 ,  H01L21/31144 ,  H01L21/76224 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76816 ,  H01L21/76843 ,  H01L21/76877 ,  H01L21/76897 ,  H01L21/823475 ,  H01L21/823481 ,  H01L23/5226 ,  H01L29/0649

摘要： A method for blocking one or more portions of one or more trenches (700) during manufacture of a semiconductor structure, the method comprising:
a. providing a substrate (100) comprising one or more trenches (700), and a dielectric material (130),
b. providing a first overlayer (300), thereby filling the one or more trenches (700);
c. covering a first area of the substrate (100), situated directly above the one or more portions and corresponding thereto, with a block pattern (400) of the condensed photo-condensable metal oxide;
d. covering the block pattern and the second area with a second overlayer (500);
e. providing a masking layer (600) over the second overlayer (500), the masking layer (600) having a via pattern (800); and
f. transferring the via pattern (800) and the other portion of the at least one of the trenches (700) into the dielectric material (130).