公开(公告)号：EP1690295A4

公开(公告)日：2018-01-24

申请号：EP04813005

申请日：2004-12-06

申请人： INT RECTIFIER CORP

发明人： BEACH ROBERT

IPC分类号： H01L29/739 ,  H01L20060101 ,  H01L31/0328

CPC分类号： H01L29/7786 ,  H01L21/28581 ,  H01L21/28587 ,  H01L23/3171 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/452 ,  H01L29/66143 ,  H01L29/66462 ,  H01L29/861 ,  H01L29/872 ,  H01L29/88 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： An embodiment of a III-nitride semiconductor device and method for making the same may include a low resistive passivation layer that permits the formation of device contacts without damage to the III-nitride material during high temperature processing. The passivation layer may be used to passivate the entire device. The passivation layer may also be provided in between contacts and active layers of the device to provide a low resistive path for current conduction. The passivation process may be used with any type of device, including FETs, rectifiers, schottky diodes and so forth, to improve breakdown voltage and prevent field crowding effects near contact junctions. The passivation layer may be activated with a low temperature anneal that does not impact the III-nitride device regarding outdiffusion.

公开(公告)号：EP1690286A4

公开(公告)日：2009-07-08

申请号：EP04817951

申请日：2004-12-06

申请人： INT RECTIFIER CORP

发明人： BEACH ROBERT

IPC分类号： H01L21/3205 ,  H01L21/336 ,  H01L21/4763 ,  H01L29/20 ,  H01L29/739 ,  H01L29/778 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC分类号： H01L29/2003 ,  H01L29/7787

摘要： A III-nitride based field effect transistor obtains improved performance characteristics through manipulation of the relationship between the in-plane lattice constant of the interface of material layers. A high mobility two dimensional electron gas generated at the interface of the III-nitride materials permits high current conduction with low ON resistance, and is controllable through the manipulation of spontaneous polarization fields obtained according to the characteristics of the III-nitride material. The field effect transistor produced can be made to be a nominally on device where the in-plane lattice constants of the material forming the interface match. A nominally off device may be produced where one of the material layers has an in-plane lattice constant that is larger than that of the other layer material. The layer materials are preferably InAlGaN/GaN layers that are particularly tailored to the characteristics of the present invention.