公开(公告)号：EP2795675A4

公开(公告)日：2015-11-25

申请号：EP11878060

申请日：2011-12-20

Applicant: INTEL CORP

Inventor： HECK JOHN ,  BAR HANAN ,  FESHALI AVI ,  FELDESH RAN

IPC: H01L27/14 ,  G02B6/12

CPC classification number: G02B6/1225 ,  G02B6/12004 ,  G02B6/13 ,  G02B2006/12061 ,  H01L21/28575 ,  H01L21/8252 ,  H01L21/8258 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/205

公开(公告)号：EP3084844A4

公开(公告)日：2017-09-06

申请号：EP13899668

申请日：2013-12-20

Applicant: INTEL CORP

Inventor： VINCENT BENJAMIN ,  FESHALI AVI

IPC: H01L31/12

CPC classification number: H01L31/105 ,  G02B6/1228 ,  G02B6/4295 ,  G02B2006/121 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/1804 ,  Y02E10/52

Abstract: Techniques and mechanisms for providing efficient direction of light to a photodetector with a tapered waveguide structure. In an embodiment, a taper structure of a semiconductor device comprises a substantially single crystalline silicon. A buried oxide underlies and adjoins the monocrystalline silicon of the taper structure, and a polycrystalline Si is disposed under the buried oxide. During operation of the semiconductor device light is redirected in the taper structure and received via a first side of a Germanium photodetector. In another embodiment, one or more mirror structures positioned on a far side of the Germanium photodetector may provide for a portion of the light to be reflected back to the Germanium photodetector.

Abstract translation: 用锥形波导结构为光探测器提供有效光方向的技术和机制。 在一个实施例中，半导体器件的锥形结构包括基本单晶硅。 掩埋氧化物位于锥形结构的单晶硅的下面并与之相邻，多晶硅位于掩埋氧化物下面。 在半导体器件的操作期间，光以锥形结构重新定向并经由锗光电探测器的第一侧接收。 在另一个实施例中，位于锗光电检测器的远侧的一个或多个反射镜结构可以提供一部分光被反射回锗光电检测器。