SPOTSIZE CONVERTER AND APPARATUS FOR OPTICAL CONDUCTION

    公开(公告)号:EP3159719B1

    公开(公告)日:2018-05-30

    申请号:EP14897866.1

    申请日:2014-07-16

    发明人: TU, Xin FU, Hongyan

    摘要: A spotsize converter (200) includes a substrate layer (201); a first coverage layer (202) disposed above the substrate layer (201); an isolating layer (203) disposed between the substrate layer (201) and the first coverage layer (202); and a waveguide (204) disposed inside the first coverage layer (202), where the waveguide (204) is symmetrical along a principal axis. The waveguide (204) includes an equal-width first waveguide (301), an equal-width second waveguide (302), and a third waveguide (303). A first end of the third waveguide (303) is connected to a first end of the first waveguide (301) and a first end of the second waveguide (302), and the first waveguide (301), the second waveguide (302), and the third waveguide (303) form a Y shape. Along a first direction of the principal axis, a width of the third waveguide (303) gradually increases, and a distance, in a second direction, between the first waveguide (301) and the second waveguide (302) gradually decreases. The spotsize converter (200) can be used to implement spot size conversion between an optical fiber and an optical waveguide, and a coupling loss between the optical fiber and the optical waveguide can be reduced by using the spotsize converter (200).

    TAPERED WAVEGUIDE AND SILICON-BASED CHIP
    3.
    发明公开
    TAPERED WAVEGUIDE AND SILICON-BASED CHIP 审中-公开
    锥形波导和硅基芯片

    公开(公告)号:EP3287821A1

    公开(公告)日:2018-02-28

    申请号:EP15891572.8

    申请日:2015-06-05

    发明人: ZHAO, Fei LI, Ming

    IPC分类号: G02B6/12 G02B6/122 G02B6/30

    摘要: A tapered waveguide includes a central waveguide (10) and shallow-etched strip waveguides (20) disposed on both sides of the central waveguide. Each shallow-etched strip waveguide (20) is of a structure with a gradually changing width, and an outline, away from the central waveguide (10) and in a length direction, of the shallow-etched strip waveguide (20) is a concave arc without an abrupt change. An effective refractive index changes slowly and an insertion loss of a device can be effectively reduced. In addition, a wider area of the shallow-etched strip waveguide has a shorter length. In this way, a length of the device is effectively reduced, thereby facilitating miniaturization of the device. A silicon-based chip is further disclosed.

    摘要翻译: 锥形波导包括中心波导(10)和布置在中心波导两侧的浅蚀刻带状波导(20)。 每个浅蚀刻带状波导(20)具有宽度逐渐变化的结构,浅蚀刻带状波导(20)远离中心波导(10)和长度方向的轮廓为凹面 弧没有突然改变。 有效折射率变化缓慢并且装置的插入损耗可以被有效地降低。 另外,浅蚀刻带状波导的较宽区域具有较短的长度。 以这种方式,装置的长度被有效地减小,从而有助于装置的小型化。 进一步公开了一种硅基芯片。

    SPOTSIZE CONVERTER AND APPARATUS FOR OPTICAL CONDUCTION
    4.
    发明公开
    SPOTSIZE CONVERTER AND APPARATUS FOR OPTICAL CONDUCTION 有权
    PUNKTGRÖSSENUMWANDLERUND VORRICHTUNGFÜROPTISCHE LEITUNG

    公开(公告)号:EP3159719A4

    公开(公告)日:2017-06-28

    申请号:EP14897866

    申请日:2014-07-16

    发明人: TU XIN FU HONGYAN

    IPC分类号: G02B6/30 G02B6/122 G02B6/125

    摘要: A spotsize converter (200) includes a substrate layer (201); a first coverage layer (202) disposed above the substrate layer (201); an isolating layer (203) disposed between the substrate layer (201) and the first coverage layer (202); and a waveguide (204) disposed inside the first coverage layer (202), where the waveguide (204) is symmetrical along a principal axis. The waveguide (204) includes an equal-width first waveguide (301), an equal-width second waveguide (302), and a third waveguide (303). A first end of the third waveguide (303) is connected to a first end of the first waveguide (301) and a first end of the second waveguide (302), and the first waveguide (301), the second waveguide (302), and the third waveguide (303) form a Y shape. Along a first direction of the principal axis, a width of the third waveguide (303) gradually increases, and a distance, in a second direction, between the first waveguide (301) and the second waveguide (302) gradually decreases. The spotsize converter (200) can be used to implement spot size conversion between an optical fiber and an optical waveguide, and a coupling loss between the optical fiber and the optical waveguide can be reduced by using the spotsize converter (200).

    摘要翻译: 点标式转换器(200)包括衬底层(201); 布置在所述衬底层(201)上方的第一覆盖层(202); 布置在所述衬底层(201)和所述第一覆盖层(202)之间的隔离层(203); 和布置在第一覆盖层(202)内部的波导(204),其中波导(204)沿主轴对称。 波导(204)包括等宽第一波导(301),等宽第二波导(302)和第三波导(303)。 第三波导303的第一端连接第一波导301的第一端和第二波导302的第一端,第一波导301,第二波导302, 和第三波导(303)形成Y形。 沿主轴的第一方向,第三波导(303)的宽度逐渐增加,并且第一波导(301)和第二波导(302)之间在第二方向上的距离逐渐减小。 点标尺转换器200可以用于实现光纤和光波导之间的光点尺寸转换,并且可以通过使用点尺寸转换器200来减小光纤和光波导之间的耦合损耗。

    OPTICAL DEVICE USING ECHELLE GRATING THAT PROVIDES TOTAL INTERNAL REFLECTION OF LIGHT
    5.
    发明公开
    OPTICAL DEVICE USING ECHELLE GRATING THAT PROVIDES TOTAL INTERNAL REFLECTION OF LIGHT 审中-公开
    光学器件采用E光栅,提供全内反射光

    公开(公告)号:EP3170039A1

    公开(公告)日:2017-05-24

    申请号:EP15822321.4

    申请日:2015-05-11

    申请人: Intel Corporation

    IPC分类号: G02B5/18

    摘要: Embodiments of the present disclosure are directed toward techniques and configurations for an optical device having a semiconductor layer to propagate light and a mirror disposed inside the semiconductor layer and having echelle grating reflective surface to substantially totally internally reflect the propagating light inputted by one or more input waveguides, to be received by one or more output waveguides. The waveguides may be disposed in the semiconductor layer under a determined angle relative to the mirror reflective surface. The determined angle may be equal to or greater than a total internal reflection angle corresponding to the interface, to provide substantially total internal reflection of light by the mirror. The mirror may be formed by an interface of the semiconductor layer comprising the mirror reflective surface and another medium filling the mirror, such as a dielectric. Other embodiments may be described and/or claimed.

    摘要翻译: 本公开的实施例针对用于具有半导体层以传播光的半导体层和设置在半导体层内并具有中阶梯光栅反射表面的反射镜的光学器件的技术和配置,以基本上全内反射由一个或多个输入端输入的传播光 波导,将被一个或多个输出波导接收。 波导可以相对于镜面反射表面以确定的角度布置在半导体层中。 确定的角度可以等于或大于对应于界面的全内反射角,以通过反射镜提供光的基本全内反射。 反射镜可以由包括镜反射表面的半导体层与填充反射镜的另一种介质(例如电介质)的界面形成。 其他实施例可以被描述和/或要求保护。

    PHOTODETECTOR WITH TAPERED WAVEGUIDE STRUCTURE
    6.
    发明公开
    PHOTODETECTOR WITH TAPERED WAVEGUIDE STRUCTURE 审中-公开
    FOTODETEKTOR MIT KONISCHER WELLENLEITERSTRUKTUR

    公开(公告)号:EP3084844A1

    公开(公告)日:2016-10-26

    申请号:EP13899668.1

    申请日:2013-12-20

    申请人: Intel Corporation

    IPC分类号: H01L31/12

    摘要: Techniques and mechanisms for providing efficient direction of light to a photodetector with a tapered waveguide structure. In an embodiment, a taper structure of a semiconductor device comprises a substantially single crystalline silicon. A buried oxide underlies and adjoins the monocrystalline silicon of the taper structure, and a polycrystalline Si is disposed under the buried oxide. During operation of the semiconductor device light is redirected in the taper structure and received via a first side of a Germanium photodetector. In another embodiment, one or more mirror structures positioned on a far side of the Germanium photodetector may provide for a portion of the light to be reflected back to the Germanium photodetector.

    摘要翻译: 用于向具有锥形波导结构的光电检测器提供有效的光线方向的技术和机构。 在一个实施例中,半导体器件的锥形结构包括基本上单晶硅。 掩埋氧化物位于锥形结构的单晶硅的下面并毗邻,并且多晶Si设置在掩埋氧化物的下方。 在半导体器件的操作期间,光在锥形结构中重定向并且经由锗光电检测器的第一侧接收。 在另一个实施例中,位于锗光电检测器的远侧上的一个或多个反射镜结构可以将一部分被反射回的光提供给锗光电检测器。