摘要:
Embodiments of the present disclosure are directed toward techniques and configurations for an optical coupler. In some embodiments, the device may include an optical waveguide to transmit light input from a light source. The optical waveguide may include a semiconductor layer, having a trench with one facet that comprises an edge formed under an approximately 45 degree angle and another facet formed substantially normal to the semiconductor layer. The edge may interface with another medium to form a mirror to receive inputted light and reflect received light substantially perpendicularly to propagate the received light. Other embodiments may be described and/or claimed.
摘要:
A spotsize converter (200) includes a substrate layer (201); a first coverage layer (202) disposed above the substrate layer (201); an isolating layer (203) disposed between the substrate layer (201) and the first coverage layer (202); and a waveguide (204) disposed inside the first coverage layer (202), where the waveguide (204) is symmetrical along a principal axis. The waveguide (204) includes an equal-width first waveguide (301), an equal-width second waveguide (302), and a third waveguide (303). A first end of the third waveguide (303) is connected to a first end of the first waveguide (301) and a first end of the second waveguide (302), and the first waveguide (301), the second waveguide (302), and the third waveguide (303) form a Y shape. Along a first direction of the principal axis, a width of the third waveguide (303) gradually increases, and a distance, in a second direction, between the first waveguide (301) and the second waveguide (302) gradually decreases. The spotsize converter (200) can be used to implement spot size conversion between an optical fiber and an optical waveguide, and a coupling loss between the optical fiber and the optical waveguide can be reduced by using the spotsize converter (200).
摘要:
A tapered waveguide includes a central waveguide (10) and shallow-etched strip waveguides (20) disposed on both sides of the central waveguide. Each shallow-etched strip waveguide (20) is of a structure with a gradually changing width, and an outline, away from the central waveguide (10) and in a length direction, of the shallow-etched strip waveguide (20) is a concave arc without an abrupt change. An effective refractive index changes slowly and an insertion loss of a device can be effectively reduced. In addition, a wider area of the shallow-etched strip waveguide has a shorter length. In this way, a length of the device is effectively reduced, thereby facilitating miniaturization of the device. A silicon-based chip is further disclosed.
摘要:
A spotsize converter (200) includes a substrate layer (201); a first coverage layer (202) disposed above the substrate layer (201); an isolating layer (203) disposed between the substrate layer (201) and the first coverage layer (202); and a waveguide (204) disposed inside the first coverage layer (202), where the waveguide (204) is symmetrical along a principal axis. The waveguide (204) includes an equal-width first waveguide (301), an equal-width second waveguide (302), and a third waveguide (303). A first end of the third waveguide (303) is connected to a first end of the first waveguide (301) and a first end of the second waveguide (302), and the first waveguide (301), the second waveguide (302), and the third waveguide (303) form a Y shape. Along a first direction of the principal axis, a width of the third waveguide (303) gradually increases, and a distance, in a second direction, between the first waveguide (301) and the second waveguide (302) gradually decreases. The spotsize converter (200) can be used to implement spot size conversion between an optical fiber and an optical waveguide, and a coupling loss between the optical fiber and the optical waveguide can be reduced by using the spotsize converter (200).
摘要:
Embodiments of the present disclosure are directed toward techniques and configurations for an optical device having a semiconductor layer to propagate light and a mirror disposed inside the semiconductor layer and having echelle grating reflective surface to substantially totally internally reflect the propagating light inputted by one or more input waveguides, to be received by one or more output waveguides. The waveguides may be disposed in the semiconductor layer under a determined angle relative to the mirror reflective surface. The determined angle may be equal to or greater than a total internal reflection angle corresponding to the interface, to provide substantially total internal reflection of light by the mirror. The mirror may be formed by an interface of the semiconductor layer comprising the mirror reflective surface and another medium filling the mirror, such as a dielectric. Other embodiments may be described and/or claimed.
摘要:
Techniques and mechanisms for providing efficient direction of light to a photodetector with a tapered waveguide structure. In an embodiment, a taper structure of a semiconductor device comprises a substantially single crystalline silicon. A buried oxide underlies and adjoins the monocrystalline silicon of the taper structure, and a polycrystalline Si is disposed under the buried oxide. During operation of the semiconductor device light is redirected in the taper structure and received via a first side of a Germanium photodetector. In another embodiment, one or more mirror structures positioned on a far side of the Germanium photodetector may provide for a portion of the light to be reflected back to the Germanium photodetector.
摘要:
A SOI device may include a waveguide adapter that couples light between an external light source—e.g., a fiber optic cable or laser—and a silicon waveguide on the silicon surface layer of the SOI device. In one embodiment, the waveguide adapter is embedded into the insulator layer. Doing so may enable the waveguide adapter to be formed before the surface layer components are added onto the SOI device. Accordingly, fabrication techniques that use high-temperatures may be used without harming other components in the SOI device—e.g., the waveguide adapter is formed before heat-sensitive components are added to the silicon surface layer.
摘要:
An optical radiation detection system (100) comprising: an optical medium (1) structured to define a region (5) suitable for transmitting an optical radiation and being associated to at least one electric parameter varying as a function of the optical radiation concerning said region; at least one electrode (2, 3) electrically coupled to the optical medium (1), and spaced from said region (5), an electric power generator (4) connected to said at least one electrode (2) and structured to provide an electric signal (Se) to be applied to the optical medium. Further, the system comprises an electric measuring circuit (50) connected to said at least one electrode (2) and structured to provide a measuring electric signal (SM) representing a variation of said at least one electric parameter.
摘要:
A low-cost optical waveguide wherein the use efficiency of a core material is high and a method for manufacturing such an optical waveguide are disclosed. The method for manufacturing the optical waveguide comprises a step wherein a first cladding (2) is formed by applying and curing a resin on a substrate (20), a step wherein a core material (1’) is fed between a cavity mold (10) with a recess having the shape of a core pattern and the first cladding on the substrate, a step wherein a core pattern (1) corresponding to the recess is formed on the first cladding by curing the core material, and a step wherein the cavity mold (10) is removed from the core pattern and the first cladding.