公开(公告)号：EP3087488A4

公开(公告)日：2017-12-06

申请号：EP14873755

申请日：2014-12-22

申请人： INTEL CORP

发明人： QUERBACH BRUCE ,  SCHOENBORN THEODORE Z ,  ZIMMERMAN DAVID J ,  ELLIS DAVID G ,  HAMPSON CHRISTOPHER W ,  WAN IFAR ,  ZHANG YULAN ,  MALLELA RAMAKRISHNA ,  LUI WILLIAM K

IPC分类号： G11C29/36 ,  G11C11/406 ,  G11C29/00 ,  G11C29/10 ,  G11C29/12 ,  G11C29/16 ,  G11C29/18 ,  G11C29/20 ,  G11C29/44

CPC分类号： G11C29/38 ,  G06F11/263 ,  G06F11/27 ,  G11C11/406 ,  G11C29/10 ,  G11C29/1201 ,  G11C29/16 ,  G11C29/18 ,  G11C29/20 ,  G11C29/36 ,  G11C29/4401 ,  G11C29/72 ,  G11C29/78 ,  G11C29/783 ,  G11C2029/1202 ,  G11C2029/1204 ,  G11C2029/1206 ,  G11C2029/1208 ,  G11C2029/3602 ,  G11C2029/4402

摘要： In accordance with the present description, a device includes an internal defect detection and repair circuit which includes a self-test logic circuit built in within the device and a self-repair logic circuit also built in within the device. In one embodiment, the built in self-test logic circuit may be configured to automatically identify defective memory cells in a memory. Upon identifying one or more defective memory cells, the built in self-repair logic circuit may be configured to automatically repair the defective memory cells by replacing defective cells with spare cells within the memory.