公开(公告)号：EP0573134B1

公开(公告)日：1998-04-01

申请号：EP93300153.9

申请日：1993-01-11

申请人： INTEL CORPORATION

发明人： Fassberg, Maxine ,  Bost, Melton C. ,  Murali, Krishnamurthy ,  Charvat, Peter K. ,  Price, Lynn A. ,  Linsted , Robert

IPC分类号： H01L23/28 ,  H01L21/312

CPC分类号： H01L24/03 ,  H01L21/02118 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/76802 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01033 ,  H01L2924/01043 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/05042 ,  H01L2924/10253 ,  H01L2924/14 ,  Y10S148/075 ,  H01L2924/00

摘要： A process for forming a protective polyimide layer over a semiconductor substrate includes the steps of curing a deposited polyamic acid layer at a temperature which is sufficient to reduce the etch rate of the acid layer when subsequently exposed to a developer. After formation of a photoresist masking layer over the polyamic acid, the substrate is exposed to a developer to define a plurality of bonding pad openings therein. The developer permeates into the acid layer to form a salt in the regions beneath the openings. Subsequent hardbaking imidizes the polyamic acid, but not the salt regions. Removing the photoresist layer also develops the polyimide which removes the salt regions to expose the underlying bonding pads.

公开(公告)号：EP0573134A1

公开(公告)日：1993-12-08

申请号：EP93300153.9

申请日：1993-01-11

申请人： INTEL CORPORATION

发明人： Fassberg, Maxine ,  Bost, Melton C. ,  Murali, Krishnamurthy ,  Charvat, Peter K. ,  Price, Lynn A. ,  Linsted , Robert

IPC分类号： H01L23/28 ,  H01L21/312

CPC分类号： H01L24/03 ,  H01L21/02118 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/76802 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01033 ,  H01L2924/01043 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/05042 ,  H01L2924/10253 ,  H01L2924/14 ,  Y10S148/075 ,  H01L2924/00

摘要： A process for forming a protective polyimide layer over a semiconductor substrate includes the steps of curing a deposited polyamic acid layer at a temperature which is sufficient to reduce the etch rate of the acid layer when subsequently exposed to a developer. After formation of a photoresist masking layer over the polyamic acid, the substrate is exposed to a developer to define a plurality of bonding pad openings therein. The developer permeates into the acid layer to form a salt in the regions beneath the openings. Subsequent hardbaking imidizes the polyamic acid, but not the salt regions. Removing the photoresist layer also develops the polyimide which removes the salt regions to expose the underlying bonding pads.

摘要翻译： 在半导体衬底上形成保护性聚酰亚胺层的方法包括以下步骤：在随后暴露于显影剂时足以降低酸层蚀刻速率的温度下固化沉积的聚酰胺酸层。 在聚酰胺酸上形成光致抗蚀剂掩模层之后，将基板暴露于显影剂以在其中限定多个焊盘开口。 显影剂渗透到酸层中以在开口下方的区域中形成盐。 随后的硬烘烤酰亚胺化聚酰胺酸，而不是盐区。 去除光致抗蚀剂层还形成聚酰亚胺，其除去盐区域以暴露下面的接合焊盘。