公开(公告)号：EP4105969A1

公开(公告)日：2022-12-21

申请号：EP22187273.2

申请日：2014-06-16

申请人： INTEL Corporation

发明人： NELSON, Donald W. ,  WEBB, M. Clair ,  MORROW, Patrick ,  JUN, Kimin

IPC分类号： H01L21/336 ,  H01L29/78 ,  H01L25/065 ,  H01L27/06 ,  H01L21/98 ,  H01L21/683

摘要： A method including forming a plurality of first devices and a plurality of first interconnects on a substrate; coupling a second device layer including a plurality of second devices to ones of the plurality of first interconnect, and forming a plurality of second interconnects on the second device layer. An apparatus including a first device layer including a plurality of first circuit devices disposed between a plurality of first interconnects and a plurality of second interconnects and a second device layer including a plurality of second devices juxtaposed and coupled to one of the plurality of first interconnects and the plurality of second interconnects, wherein one of the plurality of first devices and the plurality of second devices include devices having a higher voltage range than the other of the plurality of first devices and the plurality of second devices.

公开(公告)号：EP3685438A1

公开(公告)日：2020-07-29

申请号：EP17925686.2

申请日：2017-09-20

申请人： INTEL Corporation

发明人： KUMAR, Ranjith ,  SHI, Quan ,  BOHR, Mark T. ,  YEOH, Andrew W. ,  CHAKRAVARTY, Sourav ,  CHAPPELL, Barbara A. ,  WEBB, M. Clair

IPC分类号： H01L27/06 ,  H01L27/02

公开(公告)号：EP3155654A1

公开(公告)日：2017-04-19

申请号：EP14895326.8

申请日：2014-06-16

申请人： Intel Corporation ,  Nelson, Don W. ,  Webb, Milton Clair ,  Morrow, Patrick ,  Jun, Kimin

发明人： NELSON, Donald W. ,  WEBB, M. Clair ,  MORROW, Patrick ,  JUN, Kimin

IPC分类号： H01L21/336 ,  H01L29/78

CPC分类号： H01L25/0652 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/8221 ,  H01L23/427 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/20 ,  H01L25/0655 ,  H01L25/0657 ,  H01L25/18 ,  H01L25/50 ,  H01L27/0688 ,  H01L27/0922 ,  H01L2221/68359 ,  H01L2221/68372 ,  H01L2223/6677 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16227 ,  H01L2224/24137 ,  H01L2224/24195 ,  H01L2224/73267 ,  H01L2224/9222 ,  H01L2225/06524 ,  H01L2225/06527 ,  H01L2225/06548 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/18162 ,  H01L2924/19105 ,  H01L2924/00

摘要： A method including forming a plurality of first devices and a plurality of first interconnects on a substrate; coupling a second device layer including a plurality of second devices to ones of the plurality of first interconnects, and forming a plurality of second interconnects on the second device layer. An apparatus including a first device layer including a plurality of first circuit devices disposed between a plurality of first interconnects and a plurality of second interconnects and a second device layer including a plurality of second devices juxtaposed and coupled to one of the plurality of first interconnects and the plurality of second interconnects, wherein one of the plurality of first devices and the plurality of second devices include devices having a higher voltage range than the other of the plurality of first devices and the plurality of second devices.

摘要翻译： 一种方法，包括在衬底上形成多个第一器件和多个第一互连件; 将包括多个第二设备的第二设备层耦合到所述多个第一互连中的一个，并且在所述第二设备层上形成多个第二互连。 一种包括第一装置层的装置，包括设置在多个第一互连和多个第二互连之间的多个第一电路装置和第二装置层，所述第二装置层包括并置并耦合到所述多个第一互连中的一个的多个第二装置， 所述多个第二互连，其中所述多个第一装置和所述多个第二装置中的一个包括具有比所述多个第一装置和所述多个第二装置中的另一个更高的电压范围的装置。