公开(公告)号：EP4407679A3

公开(公告)日：2024-10-02

申请号：EP24154291.9

申请日：2024-01-26

申请人： Marvell Asia Pte, Ltd.

发明人： CHAKRAVARTI, Aatreya ,  KUEMERLE, Mark William ,  SAUTER, Wolfgang ,  MACIAN RUIZ, Carlos ,  GREGORY, Jr. John Edward ,  HOLMES, Eva Shah ,  AKIKI, Samer Michael

IPC分类号： H01L25/065 ,  H01L25/18

CPC分类号： H01L25/0652 ,  H01L25/18 ,  H01L2225/0651320130101 ,  H01L2225/0651720130101 ,  H01L2225/065220130101 ,  H01L2225/0652420130101 ,  H01L2225/0652720130101 ,  H01L2225/0654120130101 ,  H01L2225/0654420130101 ,  H01L2225/0658620130101 ,  H01L25/50 ,  H01L24/17

摘要： An integrated circuit device includes a main integrated circuit die having functional circuitry configured to communicate over a network through one or more high-speed communications interfaces, and at least one secondary integrated circuit die including serial interface circuitry. Each integrated circuit die among the at least one secondary integrated circuit die is mounted on a first surface of the main integrated circuit die, and first metallization connections extend along one or more first through-silicon vias between the functional circuitry and the serial interface circuitry of the at least one secondary integrated circuit die. The first metallization connections may be configured to provide data from the main die to the secondary die, and the secondary die may be configured to communicate data between the integrated circuit device and a remote integrated circuit device. Second metallization connections extend between the serial interface circuitry of and terminals of the main integrated circuit die.

公开(公告)号：EP4434080A2

公开(公告)日：2024-09-25

申请号：EP22817263.1

申请日：2022-11-14

申请人： International Business Machines Corporation

发明人： FAROOQ, Mukta ,  KELLY, James

IPC分类号： H01L21/60 ,  H01L25/065 ,  H01L25/18 ,  H01L23/498 ,  H01L23/48 ,  H01L23/00 ,  H01L25/00

CPC分类号： H01L2224/3222520130101 ,  H01L2224/8300520130101 ,  H01L24/96 ,  H01L2924/1816220130101 ,  H01L2924/181620130101 ,  H01L2224/1210520130101 ,  H01L2224/7320120130101 ,  H01L2224/921220130101 ,  H01L2224/1622720130101 ,  H01L25/0655 ,  H01L25/0652 ,  H01L25/50 ,  H01L2225/0651720130101 ,  H01L2225/0657220130101 ,  H01L2225/0658620130101 ,  H01L25/18 ,  H01L23/49827 ,  H01L2224/9520130101 ,  H01L2224/0410520130101 ,  H01L24/73 ,  H01L2924/1531120130101 ,  H01L2924/1519220130101 ,  H01L2224/2413720130101 ,  H01L24/92 ,  H01L2924/1515320130101 ,  H01L2224/7326720130101 ,  H01L2224/9224420130101 ,  H01L2224/920220130101 ,  H01L24/82 ,  H01L2224/7321720130101 ,  H01L2224/8389620130101 ,  H01L2224/9214420130101 ,  H01L24/24 ,  H01L23/481 ,  H01L2224/21420130101

公开(公告)号：EP4427268A1

公开(公告)日：2024-09-11

申请号：EP22887898.9

申请日：2022-09-19

申请人： Micron Technology, Inc.

发明人： PAREKH, Kunal R.

IPC分类号： H01L25/065 ,  H01L23/367 ,  H01L23/373

CPC分类号： H01L25/0657 ,  H01L23/3738 ,  H01L23/3675 ,  H01L21/6835 ,  H01L25/50 ,  H01L2225/0658920130101 ,  H01L2225/0659320130101 ,  H01L2225/0652720130101 ,  H01L24/82

公开(公告)号：EP4420165A1

公开(公告)日：2024-08-28

申请号：EP22884625.9

申请日：2022-10-17

申请人： Adeia Semiconductor Bonding Technologies Inc.

发明人： GAO, Guilian ,  FOUNTAIN, Gaius, Gillman, Jr. ,  HABA, Belgacem ,  KATKAR, Rajesh

IPC分类号： H01L23/64 ,  H01L25/065 ,  H01L23/00 ,  H01L23/528 ,  H01F17/00 ,  H01F27/28

CPC分类号： H01L23/645 ,  H01L25/50 ,  H01L25/0657 ,  H01L2225/0656520130101 ,  H01L2225/0654120130101 ,  H01L2225/0652420130101 ,  H01L23/481 ,  H01L23/5227

公开(公告)号：EP4418314A2

公开(公告)日：2024-08-21

申请号：EP24185348.0

申请日：2018-04-02

申请人： Adeia Semiconductor Bonding Technologies Inc.

发明人： UZOH, Cyprian Emeka

IPC分类号： H01L21/98

CPC分类号： H01L21/67046 ,  H01L21/67051 ,  H01L21/67132 ,  H01L21/67144 ,  H01L21/67253 ,  H01L2224/8001320130101 ,  H01L24/81 ,  H01L24/97 ,  H01L2224/8000620130101 ,  H01L2224/8089520130101 ,  H01L2224/8089620130101 ,  H01L2224/8100520130101 ,  H01L2224/8180120130101 ,  H01L2224/9720130101 ,  H01L21/6836 ,  H01L21/6838 ,  H01L24/80 ,  H01L2221/6833620130101 ,  H01L2224/8001120130101 ,  H01L2224/8001220130101 ,  H01L2224/8001920130101 ,  H01L25/50 ,  H01L25/0652

摘要： A method of forming a microelectronic assembly comprising:
providing a protective layer to a first bonding surface of a first wafer;
singulating the first wafer into a plurality of dies such that each die has a portion of the first bonding surface;
cleaning the dies, comprising removing the protective layer from the first bonding surface of the dies;
preparing a second bonding surface of a second wafer, comprising plasma activating the second bonding surface;
hybrid bonding at least one of the plurality of dies to the second bonding surface; and
thermally treating the at least one of the plurality of dies and the second wafer

公开(公告)号：EP3154083B1

公开(公告)日：2024-08-07

申请号：EP16186286.7

申请日：2016-08-30

IPC分类号： H01L23/498 ,  H01L25/10

CPC分类号： H01L23/49816 ,  H01L23/49833 ,  H01L23/5389 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/040120130101 ,  H01L2224/13120130101 ,  H01L2224/1314720130101 ,  H01L2224/1622720130101 ,  H01L2224/3214520130101 ,  H01L2224/3222520130101 ,  H01L2224/4809120130101 ,  H01L2224/4822720130101 ,  H01L2224/7320420130101 ,  H01L2224/7325320130101 ,  H01L2224/7326520130101 ,  H01L2225/065120130101 ,  H01L2225/103520130101 ,  H01L2924/1531120130101 ,  H01L2924/1533120130101 ,  H01L2225/0656820130101 ,  H01L2924/351120130101 ,  H01L25/105 ,  H01L2225/104120130101 ,  H01L2225/105820130101 ,  H01L2225/109420130101 ,  H01L2924/18120130101 ,  H01L2224/1622520130101 ,  H01L2224/9212520130101

公开(公告)号：EP4402750A1

公开(公告)日：2024-07-24

申请号：EP22761870.9

申请日：2022-08-01

申请人： QUALCOMM INCORPORATED

发明人： WE, Hong Bok ,  BUOT, Joan Rey Villarba ,  PATIL, Aniket

IPC分类号： H01Q1/22 ,  H01L23/66 ,  H01Q21/06 ,  H01Q23/00 ,  H01Q25/00 ,  H01Q1/52 ,  H01Q21/28

CPC分类号： H01Q1/2283 ,  H01Q21/065 ,  H01Q23/00 ,  H01Q25/005 ,  H01L23/66 ,  H01L2223/667720130101 ,  H01Q21/28 ,  H01Q1/526 ,  H01L23/552 ,  H01L25/0655 ,  H01L25/50

公开(公告)号：EP4402721A1

公开(公告)日：2024-07-24

申请号：EP22870489.6

申请日：2022-08-22

申请人： INTEL Corporation

发明人： GANESAN, Sanka ,  LAMBERT, William J. ,  PENMECHA, Bharat Prasad ,  BRUN, Xavier Francois

IPC分类号： H01L25/10 ,  H01L23/538 ,  H01L23/00 ,  H01L25/18

CPC分类号： H01L23/5389 ,  H01L23/49816 ,  H01L23/5385 ,  H01L2924/0001420130101 ,  H01L2224/4809120130101 ,  H01L2224/1622520130101 ,  H01L2924/1816120130101 ,  H01L2924/18120130101 ,  H01L24/48 ,  H01L25/105 ,  H01L25/0657 ,  H01L2225/065120130101 ,  H01L25/0652 ,  H01L2225/0657220130101 ,  H01L2225/0651320130101 ,  H01L2225/0651720130101 ,  H01L2225/0652420130101 ,  H01L2225/0654120130101 ,  H01L2225/0654820130101 ,  H01L25/50 ,  H01L21/568 ,  H01L21/6835 ,  H01L2221/6835920130101 ,  H01L2221/6834520130101 ,  H01L2221/6837220130101 ,  H01L24/18 ,  H01L2224/1622120130101 ,  H01L2224/1718120130101 ,  H01L24/17

公开(公告)号：EP4401127A2

公开(公告)日：2024-07-17

申请号：EP24176697.1

申请日：2019-04-30

申请人： Yangtze Memory Technologies Co., Ltd.

发明人： LIU, Jun

IPC分类号： H01L23/31

CPC分类号： G11C11/005 ,  G11C16/0483 ,  G11C11/401 ,  H01L25/18 ,  H01L25/50 ,  H01L23/3114 ,  H01L24/08 ,  H01L24/80 ,  H01L25/0657 ,  H01L2224/0559920130101 ,  H01L2224/0562420130101 ,  H01L2224/0564720130101 ,  H01L2224/0565720130101 ,  H01L2224/0568420130101 ,  H01L2224/0814520130101 ,  H01L2224/8035720130101 ,  H01L2224/9420130101 ,  H01L2225/0656520130101 ,  H01L2224/8089520130101 ,  H01L2224/8089620130101 ,  H01L27/0688 ,  H01L2225/0654120130101 ,  G11C11/5621 ,  G11C11/5678 ,  G11C2213/7120130101 ,  H01L24/05 ,  H01L24/29 ,  H01L24/83 ,  H01L2224/0564420130101 ,  H01L2224/2918620130101 ,  H01L2224/8389620130101 ,  H01L2224/8037920130101 ,  H10B63/30 ,  H10B63/84 ,  H10N70/231 ,  H10B12/50 ,  H10B43/40 ,  H10B43/27

摘要： Embodiments of three-dimensional (3D) memory devices with embedded dynamic random-access memory (DRAM) and methods for forming the 3D memory devices are disclosed. In an example, a 3D memory device includes a first semiconductor structure including a peripheral circuit, an array of embedded DRAM cells, and a first bonding layer including a plurality of first bonding contacts. The 3D memory device also further includes a second semiconductor structure including an array of 3D NAND memory strings and a second bonding layer including a plurality of second bonding contacts. The 3D memory device further includes a bonding interface between the first bonding layer and the second bonding layer. The first bonding contacts are in contact with the second bonding contacts at the bonding interface.

公开(公告)号：EP4383324A1

公开(公告)日：2024-06-12

申请号：EP22306825.5

申请日：2022-12-08

申请人： Murata Manufacturing Co., Ltd. ,  Commissariat à l'énergie atomique et aux énergies alternatives

发明人： SCANNELL, Mark ,  VOIRON, Frédéric

IPC分类号： H01L21/78 ,  H01L23/00 ,  H01L25/065 ,  H01L25/00 ,  H01L25/16

CPC分类号： H01L24/80 ,  H01L24/08 ,  H01L25/50 ,  H01L2224/8089520130101 ,  H01L2224/8089620130101 ,  H01L25/0657 ,  H01L25/0652 ,  H01L21/78 ,  H01L25/16

摘要： The present invention relates to a semiconductor structure (100) comprising:
- a wafer (110) comprising a first bonding face (111),
- an array of chiplets (A_1) assembled in one piece and having a second bonding face (A_1_2).
Moreover, the area of said second bonding face is smaller than the area of said first bonding face, and said second bonding face being connected by hybrid bonding to said first bonding face.