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    Depositing a conductive metal onto a substrate
    1.
    发明公开
    Depositing a conductive metal onto a substrate 失效
    Abscheidung einesleitfähigenMetalls auf einem Substrat。

    公开(公告)号：EP0664664A1

    公开(公告)日：1995-07-26

    申请号：EP94120167.5

    申请日：1994-12-20

    申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

    发明人： Jimarez, Lisa Jeanine ,  Lawrence, William Howell ,  Markovich, Voya Rista ,  Owen, Robert John ,  Sambucetti, Carlos J.

    IPC分类号： H05K3/38 ,  C23C18/22

    CPC分类号： H05K3/38 ,  C23C18/22 ,  H05K3/181 ,  H05K3/381 ,  H05K2203/1105 ,  H05K2203/1152

    摘要： A method for depositing a conductive metal onto a dielectric substrate is provided. The method includes obtaining a metal sheet having a roughened surface that has the following parameters:
    R a = 1.25 - 2.0 µm (0.05 - 0.08 mil),
    R max = 5.0 - 13.75 µm (0.20 - 0.55 mil),
    S m = 25 - 75 µm (1.00 - 3.00 mil),
    R p = 5 - 8.75 µm (0.20 - 0.35 mil), and
    surface area = 562.5 - 781.25 µm² (0.90 - 1.20 square mils) wherein Ra is the average roughness and the arithmetic mean of the departures from horizontal mean line profile; R max is the maximum peak-to-valley height;
    S m is the mean spacing between high spots at the mean line; R p is the maximum profile height from the mean line;
    and surface area is the area under the surface profile from each measurement using a Talysurf S-120 profilometer.
    The sheet is laminated to the dielectric substrate surface by pressing the roughened surface of the metal sheet against the surface of the substrate and then removed from the substrate. The substrate surface is seeded to render it active for electroless plating thereon; and then a metal from an electroless plating bath is plated thereon. In another method, the dielectric substrate is seeded to render it active for electroless plating thereon. A metal is then plated thereon from an electroless plating bath. The plated metal is subjected to temperature of at least about 100°C for a time sufficient to increase the adhesion of the metal to the substrate.

    摘要翻译： 提供了一种在电介质基片上沉积导电金属的方法。 该方法包括获得具有以下参数的具有粗糙表面的金属片：Ra =1.25-2.0μm（0.05-0.08密耳），Rmax = 5.0-13.75μm（0.20-0.55密耳），Sm = 25-75 （1.00-300密耳），Rp =5-8.75μm（0.20-0.35密耳），表面积=562.5-781.25μm2（0.90-1.20平方密耳）其中Ra是平均粗糙度， 与水平平均线轮廓偏离的算术平均值; Rmax是最大峰谷高度; Sm是平均线上高点之间的平均间距; Rp是距平均线的最大轮廓高度; 并且表面积是使用Talysurf S-120轮廓仪从每次测量的表面轮廓下的面积。 通过将金属板的粗糙表面压在基板的表面上，然后从基板上去除，将薄片层压到电介质基片表面上。 将基材表面接种以使其活性以在其上进行无电镀; 然后将来自化学镀浴的金属镀在其上。 在另一种方法中，将电介质基底接种以使其在其上进行无电镀。 然后将金属从化学镀浴镀在其上。 使电镀金属经受至少约100℃的温度足以增加金属与基底的粘附性的时间。