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1.发明公开
公开(公告)号：EP1508070A2
公开(公告)日：2005-02-23
申请号：EP03735270.5
申请日：2003-04-30
发明人： KIRCH, Oliver , SEBALD, Michael
CPC分类号： G03F7/405 , G03F1/78 , G03F7/0045 , G03F7/0757 , G03F7/0758
摘要： The invention relates to a method for producing photoresist masks for structuring semiconductors. According to the inventive method, a resist comprising a polymer with silicon-containing groups is used. The silicon atoms in an oxygen-containing plasma are converted into silicon dioxide for the structuring process, said silicon dioxide protecting the regions of the absorber, which are arranged beneath the silicon dioxide, from being eroded by the plasma.
摘要翻译： 本发明涉及用于生产光掩模的用于构造半导体的方法。 抗蚀剂确实包含使用具有含硅基团的聚合物。 过程中，以含氧等离子体的结构中，硅原子被转换成二氧化硅，其保护由等离子体二氧化硅下布置在从去除器零件。
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2.发明公开RESISTSYSTEM, VERWENDUNG EINES RESISTSYSTEMS UND LITHOGRAPHIEVERFAHREN ZUR HERSTELLUNG VON HALBLEITERBAUELEMENTEN 审中-公开抗蚀系统使用抗蚀剂系统和光刻工艺用于生产半导体器件
公开(公告)号：EP1546806A2
公开(公告)日：2005-06-29
申请号：EP03773450.6
申请日：2003-09-19
IPC分类号： G03F7/004
CPC分类号： G03F7/2004 , G03F7/0045 , G03F7/0392
摘要： The invention relates to a resist system for lithography methods for the production of semiconductor components at wavelengths of 0.1 -150 nm, characterised by at least one polymer or copolymer comprising at least one acid-labile group. The invention also relates to the use of a resist system and a lithography method, whereby it is possible to obtain high sensitivity, especially in the EUV range, and no limitation of the process window occurs by undesirable cross-linking in the resist system, even at high doses of exposure.
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3.发明公开HOCHEMPFINDLICHER UND HOCHAUFLÖSENDER FOTORESIST FÜR ELEKTRONENSTRAHL-LITHOGRAPHIE 审中-公开高灵敏度，高分辨率的光刻胶对于电子版画
公开(公告)号：EP1540421A1
公开(公告)日：2005-06-15
申请号：EP03798060.4
申请日：2003-09-03
发明人： KIRCH, Oliver
CPC分类号： G03F7/0045 , G03F7/0392 , G03F7/405
摘要： The invention relates to a photoresist, in addition to a method for structuring substrates, which uses the inventive photoresist. Said photoresist contains triphenylsulfonium perfluoroalkane sulfonate as the photo-acid and triphenylsulfonium acetate as the photo-base. The photoresist exhibits an extremely high exposure sensitivity and is thus ideally suited to electron beam lithography. A resolution of less than 90 nm can thus be achieved for a sensitivity of
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