公开(公告)号：EP1232294B1

公开(公告)日：2005-01-26

申请号：EP00972586.2

申请日：2000-09-07

申请人： Infineon Technologies AG

发明人： SEZI, Recai ,  SCHMID, Günter ,  LOWACK, Klaus ,  RADLIK, Wolfgang ,  HAUSSMANN, Jörg

IPC分类号： C23C18/16

CPC分类号： H05K3/185 ,  C23C18/1605 ,  H05K2203/0525

摘要： The invention relates to a method for metallizing dielectrics during which a photosensitive dielectric is applied to a substrate. The dielectric is then exposed to light though a mask, is seeded with a metal and subjected to a temperature treatment and, afterwards, the dielectric is chemically metallized. Alternatively, the dielectric can be firstly seeded with a metal after being applied to the substrate, and then exposed to light through a mask. Afterwards, excess seeding material is removed and the dielectric is chemically metallized.

公开(公告)号：EP1546806A2

公开(公告)日：2005-06-29

申请号：EP03773450.6

申请日：2003-09-19

申请人： Infineon Technologies AG

发明人： DOMKE, Wolf-Dieter ,  KIRCH, Oliver ,  KRAGLER, Karl ,  LOWACK, Klaus

IPC分类号： G03F7/004

CPC分类号： G03F7/2004 ,  G03F7/0045 ,  G03F7/0392

摘要： The invention relates to a resist system for lithography methods for the production of semiconductor components at wavelengths of 0.1 -150 nm, characterised by at least one polymer or copolymer comprising at least one acid-labile group. The invention also relates to the use of a resist system and a lithography method, whereby it is possible to obtain high sensitivity, especially in the EUV range, and no limitation of the process window occurs by undesirable cross-linking in the resist system, even at high doses of exposure.

公开(公告)号：EP1232294A2

公开(公告)日：2002-08-21

申请号：EP00972586.2

申请日：2000-09-07

申请人： Infineon Technologies AG

发明人： SEZI, Recai ,  SCHMID, Günter ,  LOWACK, Klaus ,  RADLIK, Wolfgang ,  HAUSSMANN, Jörg

IPC分类号： C23C18/16

CPC分类号： H05K3/185 ,  C23C18/1605 ,  H05K2203/0525

摘要： The invention relates to a method for metallizing dielectrics during which a photosensitive dielectric is applied to a substrate. The dielectric is then exposed to light though a mask, is seeded with a metal and subjected to a temperature treatment and, afterwards, the dielectric is chemically metallized. Alternatively, the dielectric can be firstly seeded with a metal after being applied to the substrate, and then exposed to light through a mask. Afterwards, excess seeding material is removed and the dielectric is chemically metallized.