摘要:
The invention relates to a resist system for lithography methods for the production of semiconductor components at wavelengths of 0.1 -150 nm, characterised by at least one polymer or copolymer comprising at least one acid-labile group. The invention also relates to the use of a resist system and a lithography method, whereby it is possible to obtain high sensitivity, especially in the EUV range, and no limitation of the process window occurs by undesirable cross-linking in the resist system, even at high doses of exposure.
摘要:
The invention concerns an irradiation device for testing objects coated with light-sensitive paint, comprising a EUV radiation source, an optical system for filtering the radiation of the EUV radiation source, a chamber for receiving the object, as well as systems for intersecting the trajectory of the rays on the object. The invention also concerns a method for operating such a device. The invention aims at obtaining as quickly as possible an illumination at least partly simultaneous of several irradiation fields, with different doses, by using an inexpensive laboratory radiation source without resorting to complex optical systems. Therefor, the invention provides a device comprising a simplified and compact optical system, with closable diaphragm apertures located in front of the object to be irradiated and at least one control sensor placed on the trajectory of the rays and enabling the radiation dose to be measured.