公开(公告)号：EP2996163A3

公开(公告)日：2016-04-06

申请号：EP15180951.4

申请日：2009-10-24

申请人： Intellectual Keystone Technology LLC

发明人： OH, Min-Seok ,  KIM, Jung-Tae ,  SONG, Nam-Kyu ,  PARK, Min ,  LEE, Yun-Seok ,  LEE, Czang-Ho ,  SHIN, Myung-Hun ,  LEE, Byoung-Kyu ,  NAM, Yuk-Hyun ,  JUNG, Seung-Jae ,  LIM, Mi-Hwa ,  SEO, Joon-Young ,  CHOI, Dong ,  KIM, Dong-Seop ,  KIM, Byoung-June

IPC分类号： H01L31/072 ,  H01L31/0352 ,  H01L31/0224 ,  H01L31/18 ,  H01L31/075 ,  H01L31/0368 ,  H01L31/0376 ,  H01L31/0236

CPC分类号： H01L31/022441 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/02363 ,  H01L31/03682 ,  H01L31/03762 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/072 ,  H01L31/078 ,  H01L31/182 ,  Y02E10/52 ,  Y02E10/547 ,  Y02E10/548

摘要： Disclosed herein is a photoelectric conversion device having a semiconductor substrate including a front side and back side, a protective layer formed on the front side of the semiconductor substrate, a first non-single crystalline semiconductor layer formed on the back side of the semiconductor substrate, a first conductive layer including a first impurity formed on a first portion of a back side of the first non-single crystalline semiconductor layer, and a second conductive layer including the first impurity and a second impurity formed on a second portion of the back side of the first non-single crystalline semiconductor layer; and
a trench between the first conductive layer and the second conductive layer, wherein a portion of the first non-single crystalline semiconductor layer is exposed by the trench.

摘要翻译： 本发明公开了一种具有包括正面和背面的半导体衬底（10）的光电转换装置，形成在半导体衬底（10）的前侧上的保护层（60），第一非单晶半导体层 20），形成在所述第一非单晶半导体层（20）的背侧的第一部分上的包括第一杂质的第一导电层（30）和第二导电层 （31），其包括形成在第一非单晶半导体层（20）的背面的第二部分上的第一杂质和第二杂质。

公开(公告)号：EP2996163B1

公开(公告)日：2018-01-03

申请号：EP15180951.4

申请日：2009-10-24

申请人： Intellectual Keystone Technology LLC

发明人： OH, Min-Seok ,  KIM, Jung-Tae ,  SONG, Nam-Kyu ,  PARK, Min ,  LEE, Yun-Seok ,  LEE, Czang-Ho ,  SHIN, Myung-Hun ,  LEE, Byoung-Kyu ,  NAM, Yuk-Hyun ,  JUNG, Seung-Jae ,  LIM, Mi-Hwa ,  SEO, Joon-Young ,  CHOI, Dong ,  KIM, Dong-Seop ,  KIM, Byoung-June

IPC分类号： H01L31/072 ,  H01L31/075 ,  H01L31/0368 ,  H01L31/0376 ,  H01L31/0352 ,  H01L31/0236

CPC分类号： H01L31/022441 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/02363 ,  H01L31/03682 ,  H01L31/03762 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/072 ,  H01L31/078 ,  H01L31/182 ,  Y02E10/52 ,  Y02E10/547 ,  Y02E10/548

摘要： Disclosed herein is a photoelectric conversion device having a semiconductor substrate (10) including a front side and back side, a protective layer (60) formed on the front side of the semiconductor substrate (10), a first non-single crystalline semiconductor layer (20) formed on the back side of the semiconductor substrate, a first conductive layer (30) including a first impurity formed on a first portion of a back side of the first non-single crystalline semiconductor layer (20), and a second conductive layer (31) including the first impurity and a second impurity formed on a second portion of the back side of the first non-single crystalline semiconductor layer (20).

公开(公告)号：EP2996163A2

公开(公告)日：2016-03-16

申请号：EP15180951.4

申请日：2009-10-24

申请人： Intellectual Keystone Technology LLC

发明人： OH, Min-Seok ,  KIM, Jung-Tae ,  SONG, Nam-Kyu ,  PARK, Min ,  LEE, Yun-Seok ,  LEE, Czang-Ho ,  SHIN, Myung-Hun ,  LEE, Byoung-Kyu ,  NAM, Yuk-Hyun ,  JUNG, Seung-Jae ,  LIM, Mi-Hwa ,  SEO, Joon-Young ,  CHOI, Dong ,  KIM, Dong-Seop ,  KIM, Byoung-June

IPC分类号： H01L31/072 ,  H01L31/0352 ,  H01L31/0224 ,  H01L31/18 ,  H01L31/075 ,  H01L31/0368 ,  H01L31/0376 ,  H01L31/0236

CPC分类号： H01L31/022441 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/02363 ,  H01L31/03682 ,  H01L31/03762 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/072 ,  H01L31/078 ,  H01L31/182 ,  Y02E10/52 ,  Y02E10/547 ,  Y02E10/548

摘要： Disclosed herein is a photoelectric conversion device having a semiconductor substrate including a front side and back side, a protective layer formed on the front side of the semiconductor substrate, a first non-single crystalline semiconductor layer formed on the back side of the semiconductor substrate, a first conductive layer including a first impurity formed on a first portion of a back side of the first non-single crystalline semiconductor layer, and a second conductive layer including the first impurity and a second impurity formed on a second portion of the back side of the first non-single crystalline semiconductor layer; and
a trench between the first conductive layer and the second conductive layer, wherein a portion of the first non-single crystalline semiconductor layer is exposed by the trench.

摘要翻译： 这里公开了一种光电转换装置，其具有包括正面和背面的半导体衬底，形成在半导体衬底的正面上的保护层，形成在半导体衬底背面的第一非单晶半导体层， 第一导电层，包括形成在第一非单晶半导体层的背面的第一部分上的第一杂质;以及第二导电层，其包含第一杂质和第二杂质，所述第二杂质形成在第二杂质的第二部分 第一非单晶半导体层; 以及第一导电层和第二导电层之间的沟槽，其中第一非单晶半导体层的一部分被沟槽暴露。