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    System for generating uniform gas flow in a plasma reactor chamber
    2.
    发明公开
    System for generating uniform gas flow in a plasma reactor chamber 失效
    Einrichtung zur Erzeugung einer均质Gasströmung在einer Plasma-Kammer。

    公开(公告)号：EP0188207A2

    公开(公告)日：1986-07-23

    申请号：EP86100108.9

    申请日：1986-01-07

    申请人： International Business Machines Corporation

    发明人： Lo, John Choung-lin ,  Lu, Neng-hsing

    IPC分类号： H01J37/32 ,  C23C14/34 ,  H05H1/46 ,  C23C16/50

    CPC分类号： H01J37/32165 ,  H01J37/3244 ,  H05K3/0055 ,  H05K2203/095

    摘要： @ In the system, a hollow electrode (70) having two major surfaces and a plurality of apertures (72) in both major surfaces is disposed in the chamber. Connected to this hollow electrode is a radio frequency power source (76) for generating an electrical field. A second hollow electrode (78) also having two major surfaces with a plurality of apertures in both surfaces is disposed opposite the first electrode (70). A second radio frequency power source (80) is connected to the second electrode. A substrate (74) is placed in the chamber between the first and second electrodes. Provision (94,96,98,100;106) is made for introducing a gas to be converted in a reactive species by the radio frequency electrical field so that gas is uniformly distributed across the substrate.

    摘要翻译： 在该系统中，具有两个主表面的中空电极（70）和两个主表面中的多个孔（72）设置在腔室中。 连接到该中空电极的是用于产生电场的射频电源（76）。 在第一电极（70）相对的第二空心电极（78）中，两个主表面在两个表面上具有多个孔。 第二射频电源（80）连接到第二电极。 将衬底（74）放置在第一和第二电极之间的腔室中。 设置（94,96,98,100,66）用于通过射频电场引入要转化为反应物种的气体，使得气体均匀地分布在基板上。

    Plasma reactor chamber
    3.
    发明公开
    Plasma reactor chamber 失效
    等离子体反应器室

    公开(公告)号：EP0188208A3

    公开(公告)日：1987-09-30

    申请号：EP86100109

    申请日：1986-01-07

    申请人： International Business Machines Corporation

    发明人： Babu, Suryadevara Vijayakumar ,  Lu, Neng-hsing ,  Nilsen, Carl-Otto

    IPC分类号： C23C14/56 ,  C23C16/54 ,  H05H01/46 ,  H01J37/32

    CPC分类号： C23C16/54 ,  C23C14/56 ,  H05K3/0055 ,  H05K2203/095

    摘要： A system for continuous plasma processing of the major surfaces of a plurality of substrates (122A,122B,122C). The system comprises a plasma reactor chamber (115), provision for continuously introducing a gas to be converted in a reactive species by an electrical field, provision (116,118) for applying such electric fields to the substrates, provision for continuously exhausting gas, an automatic transport (123) or drive mechanism connected to the chamber and to the substrates to facilitate the advancement of substrates seriatim along a predetermined path in the chamber, and a vacuum lock (114,120) connected to the chamber for maintaining a substantially constant atmosphere in the chamber while each of the substrates is inserted into and removed from the chamber.

    System for generating uniform gas flow in a plasma reactor chamber
    4.
    发明公开
    System for generating uniform gas flow in a plasma reactor chamber 失效
    在等离子体反应器室中产生均匀气体流的系统

    公开(公告)号：EP0188207A3

    公开(公告)日：1987-09-30

    申请号：EP86100108

    申请日：1986-01-07

    申请人： International Business Machines Corporation

    发明人： Lo, John Choung-lin ,  Lu, Neng-hsing

    IPC分类号： H01J37/32 ,  C23C14/34 ,  H05H01/46 ,  C23C16/50

    CPC分类号： H01J37/32165 ,  H01J37/3244 ,  H05K3/0055 ,  H05K2203/095

    摘要： @ In the system, a hollow electrode (70) having two major surfaces and a plurality of apertures (72) in both major surfaces is disposed in the chamber. Connected to this hollow electrode is a radio frequency power source (76) for generating an electrical field. A second hollow electrode (78) also having two major surfaces with a plurality of apertures in both surfaces is disposed opposite the first electrode (70). A second radio frequency power source (80) is connected to the second electrode. A substrate (74) is placed in the chamber between the first and second electrodes. Provision (94,96,98,100;106) is made for introducing a gas to be converted in a reactive species by the radio frequency electrical field so that gas is uniformly distributed across the substrate.

    Plasma reactor chamber
    5.
    发明公开
    Plasma reactor chamber 失效
    KammerfürPlasma-Behandlung。

    公开(公告)号：EP0188208A2

    公开(公告)日：1986-07-23

    申请号：EP86100109.7

    申请日：1986-01-07

    申请人： International Business Machines Corporation

    发明人： Babu, Suryadevara Vijayakumar ,  Lu, Neng-hsing ,  Nilsen, Carl-Otto

    IPC分类号： C23C14/56 ,  C23C16/54 ,  H05H1/46 ,  H01J37/32

    CPC分类号： C23C16/54 ,  C23C14/56 ,  H05K3/0055 ,  H05K2203/095

    摘要： A system for continuous plasma processing of the major surfaces of a plurality of substrates (122A,122B,122C). The system comprises a plasma reactor chamber (115), provision for continuously introducing a gas to be converted in a reactive species by an electrical field, provision (116,118) for applying such electric fields to the substrates, provision for continuously exhausting gas, an automatic transport (123) or drive mechanism connected to the chamber and to the substrates to facilitate the advancement of substrates seriatim along a predetermined path in the chamber, and a vacuum lock (114,120) connected to the chamber for maintaining a substantially constant atmosphere in the chamber while each of the substrates is inserted into and removed from the chamber.

    摘要翻译： 一种用于连续等离子体处理多个基板（122A，122B，122C）的主表面的系统。 该系统包括等离子体反应室（115），用于通过电场连续地引入要转化为反应物质的气体的装置（116,118），用于向基板施加这种电场，提供连续排出气体，自动 输送（123）或驱动机构，其连接到所述室和基板，以促进沿着所述室中的预定路径顺序地推进基板;以及真空锁（114,120），其连接到所述室，用于在所述室中保持基本上恒定的气氛 同时将每个基板插入和移出该腔室。