Magnetoresistive read transducer
    3.
    发明公开
    Magnetoresistive read transducer 失效
    磁阻读传感器

    公开(公告)号:EP0612061A3

    公开(公告)日:1996-01-31

    申请号:EP94300208.9

    申请日:1994-01-12

    IPC分类号: G11B5/39

    CPC分类号: G11B5/399 G11B5/3906 G11B5/40

    摘要: A transducer assembly (10) has passive end regions (26) separated by a central active region (20). Layers of a first biasing material (14) and a nonmagnetic decoupling spacer material (16) are deposited on a substrate (12), then covered by a mask (18) only in the central region. By etching or ion milling, those parts of the layers not covered by the mask are removed to define a transverse biasing means in the central region and define the passive end regions. With the same mask remaining in place, a conductive material (22) and exchange layer (24) comprising a second biasing material are deposited over all regions. The mask is removed to define and provide conductor leads and longitudinal biasing means only in the end regions. MR material is thereafter deposited as a continuous thin film (28) in direct contact with the central region containing the transverse biasing means and in direct contact with the end regions containing the longitudinal biasing means. This fabrication technique has no critical etching steps requiring stopping at or near a particular interface and the MR film provides a continuous platform for carrying current without butted junctions in the current path.

    摘要翻译: 换能器组件(10)具有被中央有源区域(20)分开的无源端部区域(26)。 第一偏置材料(14)和非磁性去耦隔离材料(16)的层沉积在衬底(12)上,然后仅在中心区域由掩模(18)覆盖。 通过蚀刻或离子铣削,去除未被掩模覆盖的那些部分层以在中心区域中限定横向偏置装置并限定无源端部区域。 在保持相同掩模的情况下,在所有区域上沉积包括第二偏置材料的导电材料(22)和交换层(24)。 去除掩模以仅在端部区域限定并提供导体引线和纵向偏置装置。 此后,MR材料作为与包含横向偏置装置的中央区域直接接触并与包含纵向偏置装置的端部区域直接接触的连续薄膜(28)沉积。 该制造技术没有需要在特定界面处或附近停止的临界蚀刻步骤,并且MR膜提供用于在电流路径中没有对接结的情况下承载电流的连续平台。

    A thin film merged MR head
    6.
    发明公开
    A thin film merged MR head 失效
    稠合的薄膜MR磁头。

    公开(公告)号:EP0671725A2

    公开(公告)日:1995-09-13

    申请号:EP95301460.2

    申请日:1995-03-07

    IPC分类号: G11B5/39 G11B5/012

    摘要: A merged MR head is provided which has vertically aligned sidewalls so as to minimize side-fringing and improve off-track performance. The bottom pole piece P1, which comprises the second shield layer S2 of the read head, has a pedestal pole tip with a short length dimension. A pedestal pole tip with a length as short as two times the length of the gap layer G optimally minimizes the sidewriting and improves off-track performance. The bottom pole tip structure of the write head is constructed by ion beam milling using the top pole tip structure as a mask. The ion beam milling is directed at an angle to the sidewalls of the top pole tip structure which causes the bottom pole tip structure to be milled with sidewalls which align with the top pole tip structure. The ion beam milling can comprise two angled beams, either sequentially or simultaneously, the first beam performing primarily a cutting operation and some clean up work while the second beam primarily conducts clean up work of the redeposition of the debris caused by the cutting. In another embodiment, a single angled ion beam can be employed, provided its angle is within a particular range.

    Magnetoresistive read transducer
    8.
    发明公开
    Magnetoresistive read transducer 失效
    磁阻器Lesewandler。

    公开(公告)号:EP0612061A2

    公开(公告)日:1994-08-24

    申请号:EP94300208.9

    申请日:1994-01-12

    IPC分类号: G11B5/39

    CPC分类号: G11B5/399 G11B5/3906 G11B5/40

    摘要: A transducer assembly (10) has passive end regions (26) separated by a central active region (20). Layers of a first biasing material (14) and a nonmagnetic decoupling spacer material (16) are deposited on a substrate (12), then covered by a mask (18) only in the central region. By etching or ion milling, those parts of the layers not covered by the mask are removed to define a transverse biasing means in the central region and define the passive end regions. With the same mask remaining in place, a conductive material (22) and exchange layer (24) comprising a second biasing material are deposited over all regions. The mask is removed to define and provide conductor leads and longitudinal biasing means only in the end regions. MR material is thereafter deposited as a continuous thin film (28) in direct contact with the central region containing the transverse biasing means and in direct contact with the end regions containing the longitudinal biasing means. This fabrication technique has no critical etching steps requiring stopping at or near a particular interface and the MR film provides a continuous platform for carrying current without butted junctions in the current path.

    摘要翻译: 磁阻(MR)读取换能器组件具有被中心有源区域20隔开的无源端区26.第一偏置材料14和非磁性去耦间隔物材料16的层沉积在基底12上,然后仅由掩模18覆盖 中部地区。 通过蚀刻或离子研磨,去除了未被掩模覆盖的层的那些部分以在中心区域中限定横向偏置装置并且限定被动端部区域。 在相同的掩模保持就位的情况下,导电材料22和包括第二偏置材料的交换层24沉积在所有区域上。 去除掩模以限定并且仅在端部区域中提供导体引线和纵向偏置装置。 然后,MR材料作为连续薄膜28直接接触包含横向偏置装置的中心区域,并且与包含纵向偏置装置的端部区域直接接触。 该制造技术没有要求在特定界面处或附近停止的关键蚀刻步骤,并且MR膜提供用于承载当前路径中没有对接结的电流的连续平台。

    Magnetic head and process for manufacturing same
    9.
    发明公开
    Magnetic head and process for manufacturing same 失效
    Magnetkopf und Verfahren zu seiner Herstellung。

    公开(公告)号:EP0440386A2

    公开(公告)日:1991-08-07

    申请号:EP91300601.1

    申请日:1991-01-25

    IPC分类号: G11B5/33 G11B5/39 G11B5/58

    CPC分类号: G11B5/58 G11B5/39

    摘要: A magnetoresistive (MR) sensor (20) is centre tapped to provide the difference signals for servo operation on data and sum signals for the data information. The centre-tap (14) of the MR sensor is made of a high resistivity material compared to the resistivity of the MR element itself such as tantalum, Nichrome and carbon. Processes which can be used to produce the high resistivity centre-tap conductor include an insulator layer to define both the track width and the centre-tap conductor and a sequence which first patterns the MR sensor and then masks to define the conductor regions.

    摘要翻译: 磁阻(MR)传感器(20)被中心抽头以提供用于数据信息的数据和和信号的伺服操作的差分信号。 与MR元件本身的电阻率相比,MR传感器的中心抽头(14)由高电阻率材料制成,如钽,镍铬合金和碳。 可用于制造高电阻率中心抽头导体的工艺包括绝缘体层,以限定轨道宽度和中心抽头导体,以及序列,其首先对MR传感器进行图案化,然后掩模以限定导体区域。