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公开(公告)号：EP0751499B1
公开(公告)日：2000-12-27
申请号：EP96304421.9
申请日：1996-06-13
发明人： Fontana, Robert Edward, Jr. , Gurney, Bruce Alvin , Lin, Tsann , Speriosu, Virgil Simon , Tsang, Ching Hwa , Wilhoit, Dennis Richard
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B2005/3996 , H01F10/3272 , H01L43/10
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公开(公告)号：EP0911810A2
公开(公告)日：1999-04-28
申请号：EP98308586.1
申请日：1998-10-20
发明人： Fontana JNR, Robert Edward , Parkin, Stuart Stephen Papworth , Tsang, Ching Hwa , Williams, Mason Lamar
摘要： A magnetic tunnel junction (MTJ) magnetoresistive read head (25) for a magnetic recording system has the MTJ sensing or free ferromagnetic layer (132) also functioning as a flux guide to direct magnetic flux from the magnetic recording medium (16) to the tunnel junction. The MTJ fixed ferromagnetic layer (118) and the MTJ tunnel barrier layer (120) have their front edges substantially coplanar with the sensing surface (200) of the head (25). Both the fixed and free ferromagnetic layers (118, 132) are in contact with opposite surfaces of the MTJ tunnel barrier layer (120) but the free ferromagnetic layer extends beyond the back edge (212, 208) of either the tunnel barrier layer or the fixed ferromagnetic layer, whichever back edge is closer to the sensing surface (200). This assures that the magnetic flux is non-zero in the tunnel junction region. The magnetization direction (119) of the fixed ferromagnetic layer (118) is fixed in a direction generally perpendicular to the sensing surface and thus to the magnetic recording medium (16), preferably by interfacial exchange coupling with an antiferromagnetic layer (116). The magnetization direction (133) of the free ferromagnetic layer (132) is aligned in a direction generally parallel to the surface of the medium (16) in the absence of an applied magnetic field and is free to rotate in the presence of applied magnetic fields from the medium. A layer of high coercivity hard magnetic material adjacent the sides of the free Ferromagnetic layer (132) longitudinally biases the magnetization of the free ferromagnetic layer in the preferred direction.
摘要翻译： 用于磁记录系统的磁隧道结（MTJ）磁阻读取头（25）具有MTJ感测或自由铁磁层（132），其还用作磁通引导件，以将来自磁记录介质（16）的磁通量引导到隧道 结。 MTJ固定铁磁层（118）和MTJ隧道势垒层（120）的前缘基本上与头部（25）的感测表面（200）共面。 固定和自由铁磁层（118,132）都与MTJ隧道势垒层（120）的相对表面接触，但自由铁磁层延伸超过隧道势垒层或隧道势垒层的后边缘（212,208） 固定铁磁层，无论哪个后边缘更靠近感测表面（200）。 这确保了隧道结区域中的磁通量不为零。 固定铁磁层（118）的磁化方向（119）固定在大致垂直于感测表面的方向上，因此固定在磁记录介质（16）上，优选地通过与反铁磁层（116）的界面交换耦合。 在没有施加的磁场的情况下，自由铁磁层（132）的磁化方向（133）在大致平行于介质（16）的表面的方向上排列，并且在施加的磁场存在下自由旋转 从媒介 与自由铁磁层（132）的侧面相邻的高矫顽磁性硬磁材料层在优选方向纵向偏置自由铁磁层的磁化。
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公开(公告)号：EP0656619A2
公开(公告)日：1995-06-07
申请号：EP94307638.0
申请日：1994-10-18
发明人： Hu, Hung Liang , Tsang, Ching Hwa
CPC分类号： G11B5/035 , G11B5/012 , G11B5/39 , G11B5/4886
摘要： A rotary actuator disk drive uses substantially identical dual-element inductive write/magnetoresistive read transducers for both the top (11) and bottom (12) disk surfaces. There is no requirement that the read elements (91,95) be mechanically offset from the write elements (92,96), as is typically the case in rotary actuator disk drives due to the head-to-track skew caused by the inherent nonlinear path of the heads across the data tracks. The transducers are supported on the trailing ends of the head carrier (13,17,90,94) in such a manner that the geometric centers of the read and write elements are aligned without any mechanical offset (d). The sense current (108) for the magnetoresistive elements is provided with opposite polarity to the elements (120,122) on the top and bottom disk surfaces to shift the magnetic centers (110) of the top and bottom read elements in opposite directions relative to their geometric centers (104). The amount and direction of the magnetic shift is such that the read elements are effectively offset from their respective write elements so that the skew caused by the rotary actuator has minimal effect on alignment of the read and write elements with the data tracks.
摘要翻译： 旋转致动器磁盘驱动器对于磁盘的顶面（11）和底面（12）使用基本上相同的双元件感应写入/磁阻读取换能器。 不要求读取元件（91,95）与写入元件（92,96）机械地偏移，因为旋转致动器磁盘驱动器中的情况通常是由于由固有非线性引起的头到轨偏斜 数据轨道上的磁头路径。 换能器以这样的方式支承在头架（13,17,90,94）的尾端上，使得读和写元件的几何中心对准而没有任何机械偏移（d）。 磁阻元件的感测电流（108）与顶部和底部磁盘表面上的元件（120,122）具有相反的极性，以将顶部和底部读取元件的磁中心（110）相对于它们的几何 中心（104）。 磁偏移的量和方向使得读元件有效地偏离它们各自的写元件，使得由旋转致动器引起的偏斜对读和写元件与数据轨道的对准具有最小的影响。
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公开(公告)号：EP0496495A3
公开(公告)日：1993-01-13
申请号：EP92300113.5
申请日：1992-01-07
发明人： Tang, Yaw Shing , Tsang, Ching Hwa
IPC分类号： G11B20/10
CPC分类号： G11B20/10212
摘要： A method and device for use in measurement and compensation of non-linear bitshift in non-linear communication media such as magnetic and optical recording devices. The method and device are based on special bit patterns constructed to eliminate at least one harmonic of the fundamental frequency of the data pattern if all bits are communicated without any non-linear bitshift. The presence of non-linear bitshift is manifested by the appearance of the harmonic. By measuring the magnitude of the harmonic, the amount of non-linear bitshift is determined, and compensation adjustment is then used to offset its effect on the data detection scheme.
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公开(公告)号：EP0265798A2
公开(公告)日：1988-05-04
申请号：EP87115179.1
申请日：1987-10-16
IPC分类号： G11B5/39
CPC分类号： G11B5/3903 , G11B5/399
摘要： A magnetoresistive read transducer comprises a nonmagnetic decoupling layer (28) covering only a central region (26) of a thin magnetoresistive layer (22); a thin film (30) of soft magnetic material covering the decoupling layer; longitudinal-bias producing means (32) for producing a longitudinal bias directly in only end regions of the magnetoresistive layer of a level sufficient to maintain the end regions of the magnetoresistive layer in a single domain state, the single domain states of end regions thereby inducing a single domain state in the central region. A pair of conductors (36) are electrically connected to opposite ends of said central region of the magnetoresistive layer; and a bias current is supplied to them (36) to magnetically bias the magnetoresistive layer with transverse bias of a level sufficient to maintain the magnetoresistive layer in a high sensitivity condition whereby, upon connection of the pair of conductors to a signal sensing means, the signal sensing means determines the resistance changes in the magnetoresistive layer as a function of the fields which are intercepted by the magnetoresistive layer.
摘要翻译： 磁阻读取换能器包括仅覆盖薄磁阻层（22）的中心区域（26）的非磁解耦层（28）。 覆盖去耦层的软磁材料薄膜（30）; 纵向偏置产生装置（32），用于仅直接在磁阻层的端部区域产生一个足以将磁阻层的端部区域维持在单一畴状态的水平面的纵向偏压，从而引起端部区域的单畴状态 中央地区的单一域名状态。 一对导体（36）电连接到磁阻层的所述中心区域的相对端; 并且向它们（36）提供偏置电流以使磁阻层具有足以将磁阻层保持在高灵敏度条件的水平的横向偏压来磁偏置磁阻层，由此在将一对导体连接到信号感测装置时， 信号感测装置根据被磁阻层截获的场来确定磁阻层中的电阻变化。
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公开(公告)号：EP0911811A3
公开(公告)日：1999-10-27
申请号：EP98308587.9
申请日：1998-10-20
发明人： Dill, Frederick Hayes , Fontana JNR, Robert Edward , Parkin, Stuart Stephen Papworth , Tsang, Ching Hwa
CPC分类号： G11B5/332 , G11B5/33 , G11B5/3909 , G11B5/3912
摘要： A magnetic tunnel junction (MTJ) magnetoresistive read head for a magnetic recording system has the MTJ device (110,120,130) located between two spaced-apart magnetic shields (S1,S2). The magnetic shields, which allow the head to detect individual magnetic transitions from the magnetic recording medium without interference from neighboring transitions. also function as electrical leads for connection of the head to sense circuitry. Electrically conductive spacer layers (102,104) are located at the top and bottom of the MTJ device and connect the MTJ device to the shields. The thickness of the spacer layers is selected to optimize the spacing between the shields, which is a parameter that controls the linear resolution of the data that can be read from the magnetic recording medium. To reduce the likelihood of electrical shorting between the shields if the shield-to-shield spacing is too small, each of the shields can have a pedestal region (161,163) with the MTJ device located between the two pedestals, so that the shield-to-shield spacing outside the pedestal regions is greater than in the pedestal regions.
摘要翻译： 用于磁记录系统的磁性隧道结（MTJ）磁阻读取头具有位于两个隔开的磁屏蔽（S1，S2）之间的MTJ装置（110,120,130）。 磁屏蔽允许磁头检测来自磁记录介质的单个磁转换而不受相邻转换的干扰。 也用作用于将头连接到感测电路的电引线。 导电间隔层（102,104）位于MTJ装置的顶部和底部，并将MTJ装置连接到屏蔽。 选择间隔层的厚度以优化屏蔽之间的间隔，这是控制可以从磁记录介质读取的数据的线性分辨率的参数。 为了在屏蔽与屏蔽间隔太小时减少屏蔽之间电短路的可能性，每个屏蔽可以具有基座区域（161,163），MTJ装置位于两个基座之间，使得屏蔽到屏蔽 - 基座区域之外的屏蔽间距大于基座区域中的屏蔽间距。
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公开(公告)号：EP0634740B1
公开(公告)日：1999-09-22
申请号：EP94304883.5
申请日：1994-07-04
发明人： Chen, Mao-Min , Fontana, Robert Edward , Krounbi, Mohamad Towfik , Kung, Kenneth Ting-Yuan , Lee, James Hsi-Tang , Lo, Jyh-Shliey Jerry , Tsang, Ching Hwa , Wang, Po-Kang
IPC分类号： G11B5/39
CPC分类号： G11B5/399
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公开(公告)号：EP0612061B1
公开(公告)日：1998-08-26
申请号：EP94300208.9
申请日：1994-01-12
IPC分类号： G11B5/39
CPC分类号： G11B5/399 , G11B5/3906 , G11B5/40
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公开(公告)号：EP0612061A3
公开(公告)日：1996-01-31
申请号：EP94300208.9
申请日：1994-01-12
IPC分类号： G11B5/39
CPC分类号： G11B5/399 , G11B5/3906 , G11B5/40
摘要： A transducer assembly (10) has passive end regions (26) separated by a central active region (20). Layers of a first biasing material (14) and a nonmagnetic decoupling spacer material (16) are deposited on a substrate (12), then covered by a mask (18) only in the central region. By etching or ion milling, those parts of the layers not covered by the mask are removed to define a transverse biasing means in the central region and define the passive end regions. With the same mask remaining in place, a conductive material (22) and exchange layer (24) comprising a second biasing material are deposited over all regions. The mask is removed to define and provide conductor leads and longitudinal biasing means only in the end regions. MR material is thereafter deposited as a continuous thin film (28) in direct contact with the central region containing the transverse biasing means and in direct contact with the end regions containing the longitudinal biasing means. This fabrication technique has no critical etching steps requiring stopping at or near a particular interface and the MR film provides a continuous platform for carrying current without butted junctions in the current path.
摘要翻译： 换能器组件（10）具有被中央有源区域（20）分开的无源端部区域（26）。 第一偏置材料（14）和非磁性去耦隔离材料（16）的层沉积在衬底（12）上，然后仅在中心区域由掩模（18）覆盖。 通过蚀刻或离子铣削，去除未被掩模覆盖的那些部分层以在中心区域中限定横向偏置装置并限定无源端部区域。 在保持相同掩模的情况下，在所有区域上沉积包括第二偏置材料的导电材料（22）和交换层（24）。 去除掩模以仅在端部区域限定并提供导体引线和纵向偏置装置。 此后，MR材料作为与包含横向偏置装置的中央区域直接接触并与包含纵向偏置装置的端部区域直接接触的连续薄膜（28）沉积。 该制造技术没有需要在特定界面处或附近停止的临界蚀刻步骤，并且MR膜提供用于在电流路径中没有对接结的情况下承载电流的连续平台。
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公开(公告)号：EP0660127A3
公开(公告)日：1996-01-17
申请号：EP94119895.4
申请日：1994-12-16
发明人： Coffey, Kevin Robert , Fontana, Robert Edward , Howard, James Kent , Hylton, Todd Lanier , Parker, Michael Andrew , Tsang, Ching Hwa
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B2005/3996 , H01L43/10
摘要： A magnetoresistive read sensor incorporates a multilayer sensing element formed of one or more magnetoresistive elements in a planar array, each magnetoresistive element having a multilayer structure of at least two ferromagnetic layers separated by a nonmagnetic layer. The ferromagnetic layers are coupled antiferromagnetically by magnetostatic coupling at opposing edges of the ferromagnetic layers. A bias layer separated from the magnetoresistive sensing element by a spacer layer provides a magnetic field to bias the magnetoresistive sensing element at a desired non-signal point for linear response. The magnetoresistive sensing element is formed by alternatively depositing layers of ferromagnetic material (47,51) and layers of nonmagnetic material (49) on a substrate (41) and then patterning the resulting structure using photolithographic techniques to provide a planar array of magnetoresistive elements. A conductive layer is deposited over the array filling in the spaces separating the magnetoresistive elements to provide electrical conductivity between the elements in the plane of the structure.
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