公开(公告)号：EP0197422A2

公开(公告)日：1986-10-15

申请号：EP86104052.5

申请日：1986-03-25

申请人： International Business Machines Corporation

发明人： Chiu, George Tein-Chu ,  Mo, Roy Ah-Tak ,  Wong, Man-Chong

IPC分类号： H01L21/76 ,  H01L21/312 ,  H01L21/316

CPC分类号： H01L21/31055 ,  H01L21/312 ,  H01L21/76224

摘要： A method of forming trench/dielectric by coating trench walls and substrate surface with MgO followed by filling the trenches with a resin glass. The MgO layer is used for RIE planarization etchback of the resin glass to level of the trenches.

摘要翻译： 通过用MgO涂覆沟槽壁和衬底表面来形成沟槽/电介质的方法，然后用树脂玻璃填充沟槽。 MgO层用于树脂玻璃的RIE平坦化回蚀到沟槽的水平。

公开(公告)号：EP0197422B1

公开(公告)日：1992-05-27

申请号：EP86104052.5

申请日：1986-03-25

申请人： International Business Machines Corporation

发明人： Chiu, George Tein-Chu ,  Mo, Roy Ah-Tak ,  Wong, Man-Chong

IPC分类号： H01L21/76 ,  H01L21/312 ,  H01L21/316

CPC分类号： H01L21/31055 ,  H01L21/312 ,  H01L21/76224

摘要： A method of forming trench/dielectric by coating trench walls and substrate surface with MgO followed by filling the trenches with a resin glass. The MgO layer is used for RIE planarization etchback of the resin glass to level of the trenches.

公开(公告)号：EP0197422A3

公开(公告)日：1989-10-25

申请号：EP86104052.5

申请日：1986-03-25

申请人： International Business Machines Corporation

发明人： Chiu, George Tein-Chu ,  Mo, Roy Ah-Tak ,  Wong, Man-Chong

IPC分类号： H01L21/76 ,  H01L21/312 ,  H01L21/316

CPC分类号： H01L21/31055 ,  H01L21/312 ,  H01L21/76224

摘要： A method of forming trench/dielectric by coating trench walls and substrate surface with MgO followed by filling the trenches with a resin glass. The MgO layer is used for RIE planarization etchback of the resin glass to level of the trenches.